6 results about "Low-temperature polycrystalline silicon" patented technology

A display substrate and a display device are provided. The display substrate includes: a base substrate, and a low temperature poly-silicon thin film transistor and a metal oxide thin film transistor on the base substrate; the low temperature poly-silicon thin film transistor includes: a low temperature poly-silicon semiconductor layer, a first gate insulating layer, a first gate electrode, a first interlayer insulating layer, a first source electrode, and a first drain electrode; the metal oxide thin film transistor includes: a metal oxide semiconductor layer, a second gate insulating layer, a second gate electrode, a second interlayer insulating layer, a passivation layer, a second source electrode, and a second drain electrode; and the second drain electrode is on a side of the metal oxide semiconductor layer away from the base substrate.

A display panel and a display apparatus are provided. In the display panel, a first electrode of the threshold compensation transistor is connected to a first electrode of the driving transistor, a second electrode of the threshold compensation transistor is connected to a gate electrode of the driving transistor, and the data writing transistor is connected to a second electrode of the driving transistor, a material of an active layer of the threshold compensation transistor includes low-temperature poly-silicon, the gate line and the scan line are arranged along a second direction, the second direction intersects with the first direction, the gate line is different from the scan line, an active layer of the data writing transistor is located on a side of an active layer of the driving transistor away from the active layer of the threshold compensation transistor in the second direction.

This utility model proposes a curved luminous screen for vehicle instrument panels, including an instrument body, which comprises an instrument shell, a mounting plate, and an OLED self-emissive screen. The mounting plate has a mounting cavity, and a control component is disposed between the mounting plate and the instrument shell. A glass cover is disposed on the mounting plate. The OLED self-emissive screen includes a liquid crystal display module, which comprises a polarizing film, a glass encapsulation layer, a low-temperature polycrystalline silicon layer, and a graphite sheet layer arranged sequentially. The use of an OLED self-emissive screen in the vehicle instrument panel only requires power to the illuminated pixels, resulting in 40%-50% lower power consumption than LCD. This is particularly suitable for extending the range of new energy vehicles. Furthermore, the self-emissive nature of OLED pixels allows for a contrast ratio of up to one million to one, with near-pure black, reducing light pollution, especially during nighttime driving, and improving the readability of instrument information. OLED covers the DCI-P3 wide color gamut, with superior color saturation and reproduction compared to LCD, making warning icons, navigation maps, and other details on the instrument panel clearer.

This application belongs to the field of semiconductor devices and discloses an active layer of a semiconductor device, its fabrication method, and its application. The active layer of the semiconductor device includes nanowires and a low-temperature polycrystalline silicon film layer; wherein the nanowires are distributed within the low-temperature polycrystalline silicon film layer. This active layer of the semiconductor device is formed by combining nanowires and a low-temperature polycrystalline silicon film layer, which can improve mobility, carrier lifetime, and reduce on-state resistance.

A display panel includes a pixel driving circuit, where the pixel driving circuit includes a driving transistor (T3) and a first transistor (T1), a first electrode of the first transistor (T1) is connected to a gate of the driving transistor (T3), a second electrode thereof is connected to a first initial signal line (Vinit1), the driving transistor (T3) is a P-type low temperature polysilicon transistor, and the first transistor (T1) is an N-type oxide transistor. The display panel further includes: a base substrate, a second conductive layer, a second active layer, a third conductive layer, and a fifth conductive layer.

The embodiment of the present application discloses a display backplane and a manufacturing method thereof; the display backplane comprises a plurality of first thin film transistors and a plurality of second thin film transistors, the first thin film transistor comprises a first active layer and a first gate layer, the first active layer comprises low-temperature polysilicon, the second thin film transistor comprises a second active layer, the second active layer comprises metal oxide, at least one first gate layer comprises a first gate unit and a first hydrogen blocking unit, and the first hydrogen blocking unit is located between the first gate unit and the first active layer; by arranging the hydrogen blocking unit in the gate layer above the active layer of the low-temperature polysilicon thin film transistor, the hydrogen blocking unit has the effect of blocking hydrogen diffusion on the active layer of the low-temperature polysilicon thin film transistor in the hydrogen supplement process, thereby improving the uniformity of the overall display backplane hydrogen supplement, reducing the influence of hydrogen supplement on the active layer, increasing the subthreshold swing of the low-temperature polysilicon thin film transistor, improving the color and brightness uniformity of display under low gray scale, and improving the display effect.