14 results about "Molybdenum chloride" patented technology

Provided are processes of filling features with method. The processes include deposition, etch, and clean operations using a molybdenum chloride (MoClx) compound. The MoClx compound may be controlled to selectively deposit on metal nitride features compared to dielectric, form plugs and crystals on dielectric materials, and perform a net etch of materials within the feature. Also provided are in-situ clean processes in which the MoClx compound is used to remove oxidation from underlying surfaces prior to deposition. Subsequent deposition using the MoClx precursor may deposit an initial layer and / or fill a feature.

The application provides an inorganic doped electrochromic fabric and a preparation method thereof. The flexible conductive fabric is first treated with an ammonium sulfate solution for hydrophilic treatment to obtain a pretreated fabric; then a tungsten chloride anhydrous ethanol solution is prepared, and molybdenum pentachloride powder is added to prepare a precursor solution; finally, the pretreated fabric is placed in the precursor solution for high-temperature reaction, and the inorganic doped electrochromic fabric is obtained after the reaction is completed. The flexible conductive fabric is treated with the ammonium sulfate solution, functional treatment is realized, and the surface activity is improved, so that the chemical bonding between the fabric and the electrochromic film is promoted; the molybdenum pentachloride is selected as the precursor, which provides a site for the nucleation and growth of WO3 on the surface of the fabric, so that a stable WO3 and MoO3 composite film is formed, the film serves as an electrochromic layer, the fabric has excellent electrical, optical and mechanical properties, has a fast optical response time and a high coloring efficiency, and can be applied to the fields of smart clothes and implantable display.

The application discloses a high-conductivity and deep-low-temperature high-thermal-conductivity carbon film resistant to high-low temperature frequent alternation, characterized by comprising a carbon film body, the carbon film body serving as an electron donor, the carbon film body being composed of multiple layers of graphene sheet layers, a molybdenum chloride layer being inserted between two adjacent graphene sheet layers, and the molybdenum chloride layer being inserted between the graphene sheet layers in the form of an ionic compound and serving as an electron acceptor. The thermal conductivity of the carbon film can be as high as 4.6 times that of an original carbon film at deep low temperature. The carbon-based thermal-conductivity film has wide application prospects in the field of heat dissipation under extreme temperature such as aerospace and deep-sea exploration.

An apparatus includes a body configured to support a substrate, a first coating, conformal on a surface of the body, that is corrosion resistant to at least one of: boron trichloride, nitrogen trifluoride, hafnium tetrachloride, aluminum trichloride, oxygen gas, chlorine gas, fluorine gas, chlorine trifluoride, hydrogen fluoride, hydrogen gas, ammonia, tungsten hexafluoride, tetrafluoromethane, titanium tetrachloride, molybdenum pentachloride, ozone, tetrafluorosilane, or hexafluoroethane, and a second coating, on the first coating, having a hardness that greater than or equal to about 8 gigapascals.

The invention discloses a purification method and a purification system of molybdenum pentachloride, and belongs to the technical field of purification of molybdenum pentachloride. The solid raw materials are placed at the bottom of a sublimation tube, and the sublimation tube is vacuumized to be not higher than 1 mBar. Adjusting the temperature of the heater and the condensation finger in the sublimation pipe, so that the low-sublimation-point impurities in the solid raw material are sublimated and desublimated in sequence and are attached to the condensation finger on the lower layer, and removing part of the first impurities in advance. Then the temperature is adjusted again, so that molybdenum pentachloride in the solid raw material is sublimated and desublimated in sequence and is attached to the condensation finger on the upper layer, and second impurities in the solid raw material are left at the bottom of the sublimation tube. And the circulation is carried out, the temperature of the condensation finger is adjusted step by step, and a high-purity molybdenum pentachloride product is obtained at the condensation finger on the upper layer.

The present invention discloses a method for preparing a catalyst for photothermal catalytic methane dry reforming reaction, as well as its product and application. Nickel nitrate hexahydrate and molybdenum chloride are used as metal sources, 2-methylimidazole is used as an organic ligand, and a MOF precursor is synthesized in the presence of aluminum oxide. The precursor is then pyrolyzed at high temperature under an H2 / Ar atmosphere to obtain a Ni-Mo@C / Al2O3 photothermal catalyst. The C species generated in situ after pyrolysis have excellent photothermal conversion effects, and the Ni and Mo bimetallics in the resulting catalyst act synergistically to match the reaction rates of methane and carbon dioxide, exhibiting good catalytic performance under full-spectrum illumination. This catalyst preparation method is simple and inexpensive, and has great application potential in alleviating the greenhouse effect and energy depletion problems.

Provided is a molybdenum oxychloride characterized in having a purity of 99.9995 wt % or higher. Additionally provided is a manufacturing method of a molybdenum oxychloride including the steps of reacting MoO3 and Cl2 and synthesizing the molybdenum oxychloride in a reaction chamber, and cooling the synthesized molybdenum oxychloride gas and precipitating the molybdenum oxychloride in a recovery chamber, wherein an impurity trap is provided between the reaction chamber and the recovery chamber, and impurities are removed with the impurity trap.

A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.

The application discloses a preparation method of two-dimensional material double-layer twisted-angle MoSe2 and two-dimensional material double-layer twisted-angle MoSe2. A double-tube limited chemical vapor deposition system is adopted, a silicon dioxide / silicon wafer is used as a substrate, and the non-growth surface of the substrate is stacked back to back in an inner tube. Molybdenum trioxide or molybdenum chloride powder is used as a molybdenum source, and sodium chloride is added as a growth promoter and placed on the upstream proximal end of the substrate. Selenium powder is used as a selenium source and placed in the outer tube upstream of the heat radiation area. The carrier gas temperature rising rate is controlled to be 10-50 DEG C / min, only inert gas is introduced in the temperature rising stage, hydrogen is introduced to assist growth for 5-30 min after the temperature is raised to the growth temperature of 750-900 DEG C. Through salt assistance, double-tube limited space and precise atmosphere time sequence control, effective regulation of the interlayer twist angle is realized, the two-dimensional material double-layer twisted-angle MoSe2 with uniform surface and high crystallization quality is prepared, and the two-dimensional material double-layer twisted-angle MoSe2 has important significance for the research of new twisted-angle optoelectronics and optoelectronic integrated devices.

The application discloses a process for preparing molybdenum trichloride, comprising the following processes: ①excess molybdenum pentachloride and stannous chloride powder are mixed, and the mixture is heated in a reactor to generate a replacement reaction to form molybdenum trichloride and tin tetrachloride; ②the generated tin tetrachloride is vaporized out of the reactor and enters a cooling system to collect and cool to obtain tin tetrachloride liquid; ③after the reaction is completed, the cooling system is switched into a molybdenum pentachloride collector, the reactor is heated to a certain temperature, and the excess molybdenum pentachloride is vaporized into the molybdenum pentachloride collector; ④after the reactor is cooled, the molybdenum trichloride product is obtained; and ⑤the tin tetrachloride liquid is filtered in a closed manner to obtain tin tetrachloride product and molybdenum pentachloride filter residue, and the molybdenum pentachloride filter residue and the collected molybdenum pentachloride can be recycled as reaction raw materials. The application improves the yield of molybdenum trichloride, reduces the production cost, the purity of the by-product tin tetrachloride is more than 99%, the waste gas amount in the production process is greatly reduced, and the process belongs to a green and environment-friendly process.

Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.

The invention provides an efficient defluorination adsorbent preparation method, which comprises: mixing silicon dioxide powder, flour, sesbania powder and a sodium silicate aqueous solution, extruding, drying to obtain a silicon dioxide coarse material, placing in a muffle furnace, heating at a low rate, roasting for 3-6 h, dipping in a modification solution of molybdenum chloride and nickel chloride, and drying to obtain the efficient defluorination adsorbent. And then carrying out secondary modification by using an alkali solution, and drying to obtain the defluorination adsorbent. The prepared defluorination adsorbent has the adsorption capacity higher than 50 mg / g, the adsorption rate is high, the cycle performance is good, experiments prove that the fluorine ion concentration of overflowing type instantaneous produced water is smaller than 1 mg / L, and therefore the defluorination adsorbent has good water treatment performance.

The invention discloses a single / multi-element coating dental implant and a preparation method thereof.The preparation method of the single / multi-element coating dental implant comprises the following steps that S1, a dental implant is pretreated, and the pretreated dental implant is obtained; s2, performing sand blasting and drying treatment on the pretreated dental implant to obtain a sand-blasted dental implant; s3, performing acid etching treatment on the dental implant subjected to sand blasting to obtain a dental implant subjected to acid etching; s4, isopropanol and purified water are mixed to obtain a mixed solvent, at least one of zirconium chloride, niobium chloride, molybdenum chloride and copper chloride is dissolved in the mixed solvent, and suspension liquid with the concentration being 0.5 M is obtained; and S5, coating and calcining to obtain the single / multi-element coating dental implant. By introducing the multi-element functional coating and regulating and controlling the calcination temperature, the roughness and surface holes of the dental implant are increased under the condition of ensuring the safety of the matrix, and meanwhile, the implant is endowed with better mechanical properties, antibacterial properties and the like.

Methods for depositing metal films using a metal halide precursor and diethyl zinc are described. The substrate is exposed to a first metal precursor and diethyl zinc to form the metal film. The exposures can be sequential or simultaneous. The metal films are pure with a low carbon content. The first metal precursor may be a metal halide selected from the group consisting of tantalum chloride, aluminum chloride, niobium chloride, titanium chloride, zirconium chloride, hafnium chloride, tungsten chloride, molybdenum chloride, tantalum bromide, aluminum bromide, niobium bromide titanium bromide, zirconium bromide, hafnium bromide, tungsten bromide, molybdenum bromide, tantalum fluoride, aluminum fluoride, niobium fluoride, titanium fluoride, zirconium fluoride, hafnium fluoride, tungsten fluoride, molybdenum fluoride, tantalum iodide, aluminum iodide, niobium iodide, titanium iodide, zirconium iodide, hafnium iodide, tungsten iodide, and molybdenum iodide.