2 results about "Molybdenum chloride" patented technology

The application discloses a high-conductivity and deep-low-temperature high-thermal-conductivity carbon film resistant to high-low temperature frequent alternation, characterized by comprising a carbon film body, the carbon film body serving as an electron donor, the carbon film body being composed of multiple layers of graphene sheet layers, a molybdenum chloride layer being inserted between two adjacent graphene sheet layers, and the molybdenum chloride layer being inserted between the graphene sheet layers in the form of an ionic compound and serving as an electron acceptor. The thermal conductivity of the carbon film can be as high as 4.6 times that of an original carbon film at deep low temperature. The carbon-based thermal-conductivity film has wide application prospects in the field of heat dissipation under extreme temperature such as aerospace and deep-sea exploration.

The application discloses a preparation method of two-dimensional material double-layer twisted-angle MoSe2 and two-dimensional material double-layer twisted-angle MoSe2. A double-tube limited chemical vapor deposition system is adopted, a silicon dioxide / silicon wafer is used as a substrate, and the non-growth surface of the substrate is stacked back to back in an inner tube. Molybdenum trioxide or molybdenum chloride powder is used as a molybdenum source, and sodium chloride is added as a growth promoter and placed on the upstream proximal end of the substrate. Selenium powder is used as a selenium source and placed in the outer tube upstream of the heat radiation area. The carrier gas temperature rising rate is controlled to be 10-50 DEG C / min, only inert gas is introduced in the temperature rising stage, hydrogen is introduced to assist growth for 5-30 min after the temperature is raised to the growth temperature of 750-900 DEG C. Through salt assistance, double-tube limited space and precise atmosphere time sequence control, effective regulation of the interlayer twist angle is realized, the two-dimensional material double-layer twisted-angle MoSe2 with uniform surface and high crystallization quality is prepared, and the two-dimensional material double-layer twisted-angle MoSe2 has important significance for the research of new twisted-angle optoelectronics and optoelectronic integrated devices.