Etching method, low-temperature polysilicon thin film transistor and AMOLED panel

Abstract

The invention discloses an etching method, a low-temperature polysilicon thin film transistor and an AMOLED panel. The etching method comprises the steps of pumping sulfur hexafluoride SF<6> and oxygen O<2> to a process chamber to perform etching on a metal molybdenum Mo layer to obtain molybdenum fluoride MoF<x>; pumping chlorine Cl<2> and oxygen O<2> to perform etching on the metal molybdenum Molayer to obtain molybdenum chloride MoCl<x>; and pumping a fluoro-etching gas and oxygen O<2> to be reacted with MoCl<x> to obtain easily volatile molybdenum oxyfluoride MoF<x>O<y>. By virtue of thescheme provided by the invention, residue of dry etching resultants can be reduced, and the problem of a display abnormal phenomenon of the AMOLED panel is solved.

Description

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AI Technical Summary

Benefits of technology

The technology described in this patented describes an improved way for producing thin films made up of metals such as molybon or tungsten through chemical reactions between gases containing halogen atoms like hydrogen (H2) and oxidizing agents called Sulfursulfur trifluoride (SF_{6/CF, CF1.5 ) during processing steps used to make these materials. By adding certain types of compounds together with specific amounts of H2/CO/N.3}

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the efficiency and resolution of liquid displays made up of organic light emitting diodes (AMLESPDS)). Current technologies have limitations like slow reaction times due to heat processing required but also require expensive equipment and complicated manufacturing techniques. Therefore there are needs for improved ways to improve these issues without compromising their effectiveness.

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