Manufacturing method of low-temperature polycrystalline silicon (poly-Si) thin film transistor (TFT)

Abstract

The invention discloses a manufacturing method of a low-temperature polycrystalline silicon (poly-Si) thin film transistor (TFT). The method is characterized by: forming an amorphous silicon (a-Si) layer on a substrate; carrying out hydrogen relief treatment on the a-Si layer so that the a-Si layer becomes a microgranular; then, forming the a-Si layer which does not be performed with grain refining on the a-Si layer of the microgranular; and then carrying out the hydrogen relief treatment on the a-Si layer so that the a-Si layer becomes the microgranular; and continuously repeating so as to form the a-Si layer and carrying out the hydrogen relief treatment so as to form the a-Si layer with multilayer micromeritics; finally, carrying out excimer laser annealing (ELA) so that the a-Si layer with the multilayer micromeritics crystallizes into a poly-Si layer. After the poly-Si layer becomes the a-Si layer of the multilayer micromeritic through pretreatment, the ELA is performed so that the crystalline grain of the poly-Si layer becomes larger and a carrier mobility is high.

Description

【Technical field】 [0001] The invention relates to a manufacturing method of a low-temperature polysilicon thin-film transistor, in particular to a low-temperature polysilicon thin film which preprocesses an amorphous silicon layer to become a multi-layer microcrystalline amorphous silicon layer and then performs an excimer laser annealing process Transistor manufacturing method. 【Background technique】 [0002] With the development of high technology, video products, especially digital video or image devices have become common products in daily life. In these digital video or image devices, the display is an important component to display relevant information. Users can read information from the display, or further control the operation of the device. [0003] Thin-film transistors (TFT) can be applied to drive components of liquid crystal displays (LCDs for short), making LCDs the mainstream of straight flat-panel displays on desktops, as well as personal computers, game c...

AI Technical Summary

Problems solved by technology

Since the amorphous silicon deposited by plasma-assisted chemical vapor deposition equipment contains 8-15% hydrogen content (hydrogen content), if excimer laser annealing is performed without dehydrogenation, the silicon film will instantly absorb huge excimer laser energy , and hydrogen explosion occurs in the excimer laser annealing area, thus causing the silicon film to easily fall off from the substrate (ablation), so it is necessary to dehydrogenate the PECVD silicon film before the excimer laser annealing, and the amorphous silicon film after dehydrogenation Perform excimer laser annealing to form the amorphous silicon film into a polysilicon film, but the thickness of the above-mentioned amorphous silicon film deposited at one time is about And at this time, the crystal grains of the amorphous silicon film are relatively disordered, and the crystal grains of the polysilicon film formed by excimer laser annealing at this thickness will still be slightly uneven, so the electron mobility (electron mobility) is not high and did not meet real expectations

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