198 results about "Excimer laser annealing" patented technology

A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed while increasing energy by predetermined steps. A poly-Si active layer and a SiO2 gate insulating layer are deposited at a temperature of about 150° C. using ICP-CVD. The poly-Si has a large grain size of about 3000 Å or more. An interface trap density of the SiO2 can be as high as 1011 / cm2. A transistor having good electrical characteristics can be fabricated at a low temperature and thus can be formed on a heat tolerant plastic substrate.

The invention provides a low-temperature poly-silicon manufacturing method, a method for manufacturing a TFT substrate by utilization of the low-temperature poly-silicon manufacturing method, and a TFT substrate structure. The low-temperature poly-silicon manufacturing method comprises the following steps that 1, the substrate (1) is provided; 2, a buffer layer (2) is formed on the substrate (1) in a deposition mode; 3, pattern processing is carried out on the buffer layer (2), and a convex portion (21) and a concave portion (23) which are different in thickness are formed; 4, an amorphous silicon layer (3) is formed on the buffer layer (2) provided with the convex portion (21) and the concave portion (23) in a deposition mode; 5, excimer laser annealing pretreatment is carried out on the amorphous silicon layer (3); 6, excimer laser annealing is carried out on the amorphous silicon layer (3), the whole surface of the amorphous silicon layer (3) is scanned through laser beams, and the amorphous silicon layer (3) is made to melt and is recrystallized to form a poly-silicon layer (4). The method can effectively control the crystallization position and crystallization direction when the amorphous silicon layer is recrystallized.

An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.

An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.

A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystalized layer dependent on the number of and energy density in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A detector is arranged to detect light diffracted from the illuminated area and to determine from the detected diffracted light the energy density in the pulses to which the layer has been exposed.

A method for fabricating organic electroluminescent devices is disclosed. The method comprises providing a substrate divided into first and second regions, forming an amorphous silicon layer on the substrate, forming a protection film on the amorphous silicon layer within the second region, performing an excimer laser annealing process on the amorphous silicon layer for converting it to a polysilicon layer, removing the protection film, patterning the polysilicon layer, thus a first patterned polysilicon layer in the first region and a second patterned polysilicon layer in the second region are formed. A resultant organic electroluminescent device is obtained. Specifically, the grain size of the first patterned polysilicon layer is large than that of the second patterned polysilicon layer.