10 results about "Excimer laser annealing" patented technology

The invention provides an excimer laser annealing device and a preparation method of a polycrystalline silicon thin film, and the device comprises a substrate carrying platform which is used for carrying a to-be-processed substrate; the laser unit is used for emitting a laser beam to the bearing surface of the substrate bearing table, the laser beam has the extension length in the first direction, and the first direction is parallel to the to-be-processed substrate; the to-be-processed substrate comprises a first side edge and a second side edge which are adjacently arranged, the to-be-processed substrate is arranged on the substrate carrying table in the mode that the first side edge inclines relative to the reference direction, the reference direction is perpendicular to the first direction, and a plane defined by the reference direction and the first direction is parallel to the to-be-processed substrate; the substrate stage is movable relative to the laser beam in a second direction, the second direction being a vector direction inclined relative to both the first direction and the reference direction. According to the excimer laser annealing device and the preparation method of the polycrystalline silicon thin film, the utilization rate of the substrate can be improved.

The invention provides an excimer laser annealing system and a control method thereof, and relates to the technical field of laser annealing, the excimer laser annealing system comprises a main control unit, a laser generation unit, an energy detection module, a motion platform, a substrate bearing table and a position detection module, the position detection module is used for collecting position information of the motion platform, and the energy detection module is used for collecting energy data of laser spots; the system further comprises a self-adaptive laser energy closed-loop adjustment module, a dynamic delay laser trigger module and an integrated microfluid thermal management and rapid cooling module. The self-adaptive laser energy closed-loop adjusting module is arranged, online, real-time and pixel-level uniformity compensation of laser spot energy distribution is achieved, a dynamic delay laser triggering method based on real-time position feedback is adopted, and synchronization errors caused by mechanical transmission gaps, speed fluctuation and vibration of a motion platform are effectively compensated.

The application discloses an annealing device, a detection method thereof, an annealing equipment and an annealing process method. The annealing device of one embodiment is applied to an excimer laser annealing equipment. The annealing device comprises a bearing table used for bearing and moving a display substrate to be processed, wherein the bearing table comprises a carrier table with a long side and a short side; an annealing chamber with a cavity is arranged above the carrier table, the annealing chamber comprises a bottom wall close to one side of the carrier table and a top wall arranged opposite to the bottom wall and away from the carrier table, a slit is arranged on the bottom wall, and the slit is parallel to the long side in the extension direction of the orthographic projection of the carrier table; an optical lens group is arranged on the top wall away from the cavity and is used for transmitting a laser beam emitted by a laser emitter; and a shielding piece is arranged in the cavity and above the slit, and the orthographic projection of the bottom wall and the orthographic projection of the slit on the bottom wall form partial overlap or complete overlap.

The invention relates to the technical field of excimer laser annealing equipment, and discloses an intelligent modulation and protection system and method for a laser and a storage medium, and the system comprises a timing unit which is used for monitoring the non-discharge shutdown time in real time; the voltage compensation module is used for presetting a time length and charging voltage attenuation characteristic correlation model; the pre-modulation execution unit is used for determining a first pulse target voltage compensation parameter according to the duration and the correlation model and injecting the first pulse target voltage compensation parameter into a high-voltage power supply charging reference; the current waveform sampling module is used for extracting the dynamic impedance characteristic quantity of the falling edge of the discharge current; the flow field stability judgment unit is used for calculating a characteristic quantity fluctuation variable coefficient; the pulse time sequence scheduling unit is used for adjusting the trigger period according to the variable coefficient to damage the acoustic oscillation coherence superposition state in the cavity, online monitoring of the uniformity of the flow field is achieved by multiplexing discharge loop characteristics, then the first pulse energy step is eliminated, and local hot spot damage, caused by discharge filamentation, of an optical assembly is avoided.

The invention relates to a manufacturing method and device of a silicon-based perovskite laminated cell, and the method comprises the steps: carrying out the texturing processing and cleaning of a silicon substrate, and obtaining a processed silicon substrate; forming a passivation layer and a heterojunction layer on the surface of the treated silicon substrate to obtain a heterojunction silicon-based bottom battery; forming a perovskite top cell film system structure and a transparent electrode layer for the heterojunction silicon-based bottom cell to obtain a laminated cell substrate; carrying out annealing treatment on the transparent electrode layer of the laminated cell substrate by using excimer laser annealing equipment; and forming metal grid line electrodes on the front and back surfaces of the laminated cell substrate to obtain the silicon-based perovskite laminated cell. According to the method, the transparent electrode layer is annealed through the excimer laser annealing technology, the photoelectric property of the transparent electrode layer can be remarkably improved, the uniformity and stability of the perovskite layer are remarkably improved, and therefore the overall photoelectric conversion efficiency and reliability of the perovskite / crystalline silicon laminated solar cell are improved.

The application provides a display substrate, a display panel and a display device. The display substrate comprises a substrate, a shielding layer arranged on one side of the substrate, the shielding layer comprising a plurality of spaced shielding portions, a plurality of first connecting lines and an edge line, the first connecting lines connecting the shielding portions, and the edge line arranged on the outer periphery of the shielding portions and connected with the end portions of the first connecting lines; and a driving thin film transistor comprising an active layer arranged on the side of the shielding layer away from the substrate, and the orthographic projection of each shielding portion on the substrate covering at least part of the orthographic projection of the active layer on the substrate. Thus, in the display substrate, the shielding portions, the first connecting lines and other structures in the shielding layer are integrated by the edge line, thereby avoiding the electrostatic accumulation of the end portions of the first connecting lines in the process of excimer laser annealing, and further avoiding the peeling of the shielding layer possibly caused by the electrostatic accumulation.

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

The present invention discloses a method for manufacturing a display panel and a display panel. The method includes providing a substrate; forming an amorphous silicon layer on the substrate; and performing excimer laser annealing crystallization on the amorphous silicon region corresponding to each drive transistor in the same manner. Embodiments of the present invention improve the display uniformity of the display panel.

The present invention provides a laser processing device and a laser processing method capable of forming a high-quality semiconductor film. The ELA device (excimer laser annealing device) (1) includes: a laser oscillator (10) that generates laser light for forming a polycrystalline silicon film by irradiating an amorphous silicon film to be processed on a substrate with the laser light; a pulse measuring instrument (100) that detects a first portion of light and a second portion of light contained in the laser light; and a monitoring device (60) that compares the detection result of the first portion of light with the detection result of the second portion of light.

The present disclosure provides an excimer laser annealing device and a method for preparing a polysilicon film. The device comprises: a substrate support for carrying a substrate to be processed; a laser unit for emitting a laser beam to a carrying surface of the substrate support, and the laser beam has an extension length along a first direction, and the first direction is parallel to the substrate to be processed; the substrate to be processed comprises a first side edge and a second side edge arranged adjacently, and the substrate to be processed is arranged on the substrate support in a manner that the first side edge is inclined to a reference direction, and the reference direction is perpendicular to the first direction and parallel to a plane defined by the first direction and the substrate to be processed; and the substrate support is capable of moving relative to the laser beam along a second direction, and the second direction is a vector direction inclined to both the first direction and the reference direction. The excimer laser annealing device and the method for preparing a polysilicon film can improve the utilization rate of the substrate.