194 results about "Excimer laser annealing" patented technology

A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.

A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystalized layer dependent on the number of and energy density in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A detector is arranged to detect light diffracted from the illuminated area and to determine from the detected diffracted light the energy density in the pulses to which the layer has been exposed.

A method of compensating for Mura in a display panel includes displaying a high gray-scale image and a low gray-scale image on a display panel. The displayed images are photographed to generate a high gray-scale luminance image and a low gray-scale luminance image. An ELA Mura for-measurement image having moiré-removed luminance values is generated by dividing luminance values of the low gray-scale luminance image by luminance values of the high gray-scale luminance image. One-dimensional average data is obtained from the ELA Mura for-measurement image. The one-dimensional average data is transformed into frequency-domain data. Target frequency-domain data having a maximum peak value is identified from the frequency-domain data. A direction, an intensity, and a frequency of the ELA Mura are obtained from the target frequency-domain data. A filter is determined based on the obtained information. The filter is applied to image data.

A method for fabricating organic electroluminescent devices is disclosed. The method comprises providing a substrate divided into first and second regions, forming an amorphous silicon layer on the substrate, forming a protection film on the amorphous silicon layer within the second region, performing an excimer laser annealing process on the amorphous silicon layer for converting it to a polysilicon layer, removing the protection film, patterning the polysilicon layer, thus a first patterned polysilicon layer in the first region and a second patterned polysilicon layer in the second region are formed. A resultant organic electroluminescent device is obtained. Specifically, the grain size of the first patterned polysilicon layer is large than that of the second patterned polysilicon layer.

The invention discloses a manufacturing method of a low-temperature polycrystalline silicon (poly-Si) thin film transistor (TFT). The method is characterized by: forming an amorphous silicon (a-Si) layer on a substrate; carrying out hydrogen relief treatment on the a-Si layer so that the a-Si layer becomes a microgranular; then, forming the a-Si layer which does not be performed with grain refining on the a-Si layer of the microgranular; and then carrying out the hydrogen relief treatment on the a-Si layer so that the a-Si layer becomes the microgranular; and continuously repeating so as to form the a-Si layer and carrying out the hydrogen relief treatment so as to form the a-Si layer with multilayer micromeritics; finally, carrying out excimer laser annealing (ELA) so that the a-Si layer with the multilayer micromeritics crystallizes into a poly-Si layer. After the poly-Si layer becomes the a-Si layer of the multilayer micromeritic through pretreatment, the ELA is performed so that the crystalline grain of the poly-Si layer becomes larger and a carrier mobility is high.

The embodiment of the invention provides a preparation method of a polycrystalline silicon thin film, a polycrystalline silicon thin film transistor and an array substrate and relates to the technical field of display. By means of the preparation method, polycrystalline silicon crystals are uniform, the grain size is increased, crystal quality is improved, and therefore the electrical properties of the thin film transistor are improved. The preparation method of the polycrystalline silicon thin film comprises the steps that an amorphous silicon thin film is formed on a substrate; the amorphous silicon thin film is treated through an excimer laser annealing method, so that the amorphous silicon thin film is crystallized into the polycrystalline silicon thin film. Furthermore, after the amorphous silicon thin film is formed and before the amorphous silicon thin film is treated though the excimer laser annealing method, the preparation method further comprises the steps that the surface of the amorphous silicon thin film is subjected to nickel salt solution treatment, so that a nickel salt solution is uniformly smeared on the surface of the amorphous silicon thin film. The method is used for preparation of the polycrystalline silicon thin film, the low-temperature polycrystalline silicon thin film transistor and the array substrate requiring that the uniformity of the polycrystalline silicon crystals is improved, the grain size is increased, and crystal quality is improved.

A process is described to form a semiconductor device such as MOSFET or CMOS with shallow junctions in the source/drain extension regions. After forming the shallow trench isolations and the gate stack, sidewall dielectric spacers are removed. A pre-amorphizing implant (PAI) is performed with Ge⁺ or Si⁺ ions to form a thin PAI layer on the surface of the silicon regions adjacent to the gate stack. B⁺ ion implantation is then performed to form source/drain extension (SDE) regions. The B⁺ implant step is then followed by multiple-pulsed 248 nm KrF excimer laser anneal with pulse duration of 23 ns. This step is to reduce the sheet resistance of the junction through the activation of the boron dopant in the SDE junctions. Laser anneal is then followed by rapid thermal anneal (RTA) to repair the residual damage and also to induce out-diffusion of the boron to yield shallower junctions than the just-implanted junctions prior to RTA.

A method is disclosed evaluating a silicon layer crystallized by irradiation with pulses form an excimer-laser. The crystallization produces periodic features on the crystalized layer dependent on the number of and energy density ED in the pulses to which the layer has been exposed. An area of the layer is illuminated with light. A microscope image of the illuminated area is made from light diffracted from the illuminated are by the periodic features. The microscope image includes corresponding periodic features. The ED is determined from a measure of the contrast of the periodic features in the microscope image.

The invention discloses a low-temperature polycrystalline silicon thin film transistor, an array substrate and a manufacturing method of the array substrate, so that manufacturing process procedures of the thin film transistor are simplified. The method includes the process that an active layer and an ohmic contact layer are formed on a substrate. The process that the active layer and the ohmic contact layer are formed on the substrate specifically includes the steps of forming an amorphous silicon layer on the substrate through; injecting impurity ions into at least the area of an ohmic contact layer to be formed of the amorphous silicon layer by means of an ion implantation method, wherein the area of the ohmic contact layer to be formed forms an initial ohmic contact layer; carrying out the excimer laser annealing process on the amorphous silicon layer after the impurity ion implantation technology; crystallizing the amorphous silicon layer after the excimer laser annealing process to form a polycrystalline silicon layer, and forming a final ohmic contact layer through the initial ohmic contact layer; carrying out the composition process on the polycrystalline silicon layer after the excimer laser annealing process to form the active layer.

The invention discloses a thin film transistor manufacturing method, which comprises the following steps: (1) a chemical vapor deposition method is firstly used for depositing a layer of amorphous silicon on the substrate of the thin film transistor; (2) excimer laser annealer (ELA) technology is used for crystallizing the amorphous silicon to form poly-silicon, and during the crystallizing process, a large number of ridges caused by laser annealing crystallizing are generated on the surface of the poly-silicon; (3) a coating mode is used for manufacturing a flattening layer on the poly-silicon with the ridges to enable the flattening layer to fully cover the ridges of the poly-silicon; and (4) etching is carried out on the flattening layer, when the ridges are etched, the flattening layer and the ridges are etched altogether, and a remaining flattening layer and a remaining small number of ridges are left on the poly-silicon. By adopting the thin film transistor manufacturing method of the invention, the ridge height of the poly-silicon after ELA crystallizing can be greatly reduced, uniformity of AMOLED (Active Matrix Organic Light Emitting Diode) backplane can be improved, and display effects are better.

The invention discloses a low-temperature polycrystalline silicon thin film, a manufacturing method thereof and a related device. The method mainly comprises the steps of providing an underlayment substrate, forming a heat storage function layer on the underlayment substrate, forming a first buffer layer on the heat storage function layer, forming a first amorphous silicon layer to cover the first buffer layer, and conducting the excimer laser annealing treatment on the underlayment substrate provided with the first amorphous silicon layer to form a low-temperature polycrystalline silicon film. The heat storage function layer and the first amorphous silicon layer can be in the heat absorption state at the same time, and can also be in the heat radiation state at the same time. Therefore, during the excimer laser annealing treatment, the cooling duration is prolonged by the first amorphous silicon layer on the surface of the polycrystalline silicon thin film, based on the utilization of the heat storage function layer at the bottom of the polycrystalline silicon thin film. In this way, the growth duration of low-temperature polysilicon is prolonged, and the grain size of low-temperature polysilicon is increased.

The surface of an amorphous silicon film formed on a glass substrate is cleaned by hydrofluoric acid in a spin clean unit. The glass substrate is conveyed to a waiting unit where the glass substrate is made to wait for about 15 minutes. Active fluoride adhered on the amorphous silicon film is sublimated. The glass substrate in which the active fluoride is sublimated is conveyed into a laser annealing device where the amorphous silicon film is excimer laser annealed to reform the amorphous silicon film into a polysilicon film. The residuals of the charges in the polysilicon film generated by excimer laser annealing the surface of the amorphous silicon film with the active fluoride adhered to the surface of the amorphous silicon film can be prevented. A thin film transistor having desired TFT characteristics can be manufactured.

The invention relates to an image display system and a manufacture method thereof. The image display system comprises a basal plate, a switch film transistor, a driving film transistor, a light-sensing component and a capacitor, wherein a baffle layer is formed on the basal plate; no conductive layer is formed in a first section predicted to form the switch film transistor so as to form a shielding layer; and a conductive layer is formed in a second section predicted to form the driving film transistor, the light-sensing component and the capacitor so as to form the shielding layer. Weather the conductive layer exists or not in the single crystallized processing procedure and the thermal conductive phenomenon of a quasimolecule laser annealing method are utilized to form polycrystalline silicon layers with different grain sizes in the first section and the second section so that the image display system has favorable uniformity of luminance.

Disclosed are a low-temperature polycrystalline silicon thin film and a preparation method thereof and a low-temperature polycrystalline silicon thin film transistor. The preparation method includes precipitating a first amorphous silicon layer on a first buffer layer of a substrate, and subjecting the first amorphous silicon layer to excimer laser annealing to form a first polycrystalline silicon film; precipitating a second amorphous silicon layer on the first polycrystalline silicon film, and subjecting the second amorphous silicon layer to the excimer laser annealing to form a second polycrystalline silicon film. According to the low-temperature polycrystalline silicon thin film and the preparation method thereof, surface protrusion height of the polycrystalline is reduced, polycrystalline grain distribution is more uniform, and other material is omitted during the preparation.

The invention provides a manufacturing method and a structure of a low-temperature polycrystalline silicon TFT substrate. The method comprises the step 1 of providing a substrate (1) and depositing a buffer layer (2), the step 2 of depositing and patterning an amorphous silicon layer (3), the step 3 of depositing and patterning a silicon oxide layer (4), the step 4 of performing excimer laser annealing treatment on the amorphous silicon layer (3) with the silicon oxide layer (4) as a photomask so that the amorphous silicon layer (3) can be crystalized and converted into a polycrystalline silicon layer, the step 5 of obtaining a first polycrystalline silicon section (31) and a second polycrystalline silicon section (32), the step 6 of defining an N type heavy-doped region and an N type light-doped region on the first polycrystalline silicon section (31) and the second polycrystalline silicon section (32), respectively, and obtaining a light-doped drain region, the step 7 of depositing and patterning a gate insulation layer (5), the step 8 of forming a first gate (61) and a second gate (62), the step 9 of forming a via hole (70), and the step 10 of forming a first source/drain (81) and a second source/drain (82).

The invention provides a quasi molecule laser annealing apparatus and a preparation method of a low-temperature polysilicon thin film, for solving the problems of short effective annealing time and quite small crystal grains during annealing of a conventional low-temperature polysilicon thin film in the prior art. In the quasi molecule laser annealing apparatus, a heating unit is arranged at one side, which is far away from an amorphous silicon thin film, at a substrate to be processed, for heating the substrate to the processed. The heating unit heats the substrate during the annealing process of the substrate to be processed, such that the temperature difference between the substrate to the processed and the amorphous silicon thin film is reduced, heat generated when laser is irradiated on the amorphous silicon thin film is not rapidly conducted to the substrate, the temperature reduction speed of the amorphous silicon thin film is slowed down, the annealing time is prolonged, and fused amorphous silicon can be conveniently annealed to form the large-crystal-grain polysilicon thin film. Since the preparation method of the low-temperature polysilicon thin film employs the quasi molecule laser annealing apparatus, the large-crystal-grain polysilicon thin film can be obtained, and a polysilicon thin film transistor with higher mobility can be obtained.

The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.