Low-temperature polycrystalline silicon thin film transistor, array substrate and manufacturing method of array substrate

Abstract

The invention discloses a low-temperature polycrystalline silicon thin film transistor, an array substrate and a manufacturing method of the array substrate, so that manufacturing process procedures of the thin film transistor are simplified. The method includes the process that an active layer, a source electrode doping layer and a drain electrode doping layer are formed on a substrate, wherein the process that the active layer, the source electrode doping layer and the drain electrode doping layer are formed on the substrate includes the steps of forming an amorphous silicon layer on the substrate through a film forming technology, forming impurity film layers on at least a source electrode doping layer to be formed and a drain electrode doping layer to be formed on the amorphous silicon layer through a composition process, carrying out the excimer laser annealing process on the substrate provided with the amorphous silicon layer and the impurity film layers to at least form the polycrystalline silicon layer, the source electrode doping layer and the drain electrode doping layer, and the composition process is carried out on the polycrystalline silicon layer to form the active layer.

Description

technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a low-temperature polysilicon thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] In pixel units of various display devices, a thin film transistor (Thin Film Transistor, TFT) that drives the display device by applying a driving voltage is widely used. Amorphous silicon (a-Si) materials with better stability and processability have been used in the active layer of TFTs, but the carrier mobility of a-Si materials is low, which cannot meet the needs of large-scale, high-resolution display devices requirements, especially the requirements of the next generation of active matrix organic light emitting display devices (Active Matrix Organic Light Emitting Device, AMOLED). Compared with amorphous silicon (a-Si) thin film transistors, polysilicon, especially low-temperature polysilicon thin film transistors, have high...

AI Technical Summary

Problems solved by technology

[0004] It can be seen that the polysilicon and the source doped layer and drain doped layer are completed in two process flows, and the manufacturing process flow of low temperature polysilicon is not simple enough.

In addition, the ion implantation method to form the source doped layer region and the drain doped layer region will cause related defects and undesirable phenomena of the thin film transistor, the performance of the thin film transistor is poor, and the yield rate is low

Images