33results about How to "Reduce the number of grain boundaries" patented technology

The invention provides a low-temperature poly-silicon manufacturing method, a method for manufacturing a TFT substrate by utilization of the low-temperature poly-silicon manufacturing method, and a TFT substrate structure. The low-temperature poly-silicon manufacturing method comprises the following steps that 1, the substrate (1) is provided; 2, a buffer layer (2) is formed on the substrate (1) in a deposition mode; 3, pattern processing is carried out on the buffer layer (2), and a convex portion (21) and a concave portion (23) which are different in thickness are formed; 4, an amorphous silicon layer (3) is formed on the buffer layer (2) provided with the convex portion (21) and the concave portion (23) in a deposition mode; 5, excimer laser annealing pretreatment is carried out on the amorphous silicon layer (3); 6, excimer laser annealing is carried out on the amorphous silicon layer (3), the whole surface of the amorphous silicon layer (3) is scanned through laser beams, and the amorphous silicon layer (3) is made to melt and is recrystallized to form a poly-silicon layer (4). The method can effectively control the crystallization position and crystallization direction when the amorphous silicon layer is recrystallized.

The invention relates to a crucible for growing silicon ingot in the field of solar energy, in particular to a crucible for growing polysilicon ingot. The crucible for growing the polysilicon ingot is characterized in that: a bottom plate 2 of the crucible is provided with a plurality of holes 3; and the depth of the holes 3 is 1 to 25 mm, the aperture of the level part of the holes 3 and the bottom plate 2 of the crucible is 1 to 30 mm, and the distributed density of the holes 3 and the bottom plate 2 of the crucible is 1 to 100 per square decimeter. By adopting the crucible for growing the polysilicon ingot to grow polysilicon ingot, the directionality of crystal grains of the polysilicon ingot can be remarkably improved, crystal grains of the polysilicon ingot predominate in <110> and <112> crystal orientation, multiple parallel twins boundaries caused by <111> crystal face are reduced, the number of crystal boundaries is reduced, and simultaneously the percentage of sigma 3 shallow energy level crystal boundary is improved so as to effectively prolong the minority carrier lifetime of a silicon chip, and the conversion efficiency of solar cells made of the silicon chip is improved.

The invention relates to a method for preparing an inorganic perovskite single-crystal thin film by pressure-driven ion diffusion growth. First, the inorganic perovskite semiconductor polycrystalline thin film is prepared by the conventional solution spin coating method, and then the surface-polished cover sheet is closely attached to the surface of the polycrystalline thin film, and covered with a flexible high-temperature resistant thin film. Next, put the sample into a high-pressure autoclave filled with liquid pressure and heat transfer medium, apply high pressure to the autoclave after sealing the autoclave, and raise the temperature to the set value at a set speed. After constant temperature and pressure treatment for a period of time, the autoclave was slowly cooled to room temperature. After the pressure is removed, the autoclave can be opened to obtain a high-quality inorganic perovskite semiconductor single crystal thin film with large grain size, high crystallinity, and highly fused grain boundaries. The inorganic perovskite single crystal thin film prepared by the invention can be used to develop high-performance solar cells, electroluminescent devices, photodetectors, etc., and has important application value in the fields of new energy technology, display equipment manufacturing, automatic control, and the like.

The invention discloses a preparation method of a large-area non-layered structure NiSe nano thin film. The method comprises the steps of preparing the NiSe nano thin film; transferring the NiSe nano thin film; and constructing an NiSe nano thin film photodetector. The non-layered structure NiSe nano thin film obtained by growth through a solid-phase reaction method is good in quality; the grain sizes are large; and the number of grain boundaries is small. On the basis of the photodetector prepared from the high-quality NiSe nano thin film, the obtained photocurrent is improved by four orders of magnitude in comparison with that of the NiSe nano-crystalline thin film. The preparation technology is simple; the cost is low; the method has relatively good practical value; and the method can be used for preparing other non-layered structure material nano thin films compatible with a traditional planar process.

The invention relates to the technical field of metal surface treatment, and specifically discloses a preparation method of a molybdenum trimolybdenum phosphide coating, which comprises the following steps: Step 1: material preparation; Step 2: putting into a furnace for sintering in a hydrogen atmosphere. The invention has the advantages of simple process, short cycle, convenient operation, easy realization of large-scale production of products, high application value and good application prospect.

The invention discloses a compound thin film, a preparation method thereof, and a compound thin film solar cell, and relates to the technical field of batteries. The compound thin film is prepared by annealing the absorption layer precursor doped with Bi under low temperature conditions. The compound film is doped with VA element Bi, so that during the annealing process, the doped Bi element will react to form a low-melting point compound and act as a flux to promote the crystallization of the absorbing layer film, reducing defects and recombination centers in the film, thereby It can improve the quality of the film layer, thereby improving the performance of the corresponding battery device, and then effectively solve the problem of growing the absorbing layer of high-quality compound thin-film batteries under low-temperature preparation conditions, and provide more opportunities for promoting the industrial development of flexible PI substrate compound thin-film solar cells. many possible avenues.

The invention provides a method for preparing a nitrogen aluminum co-doping p type zinc oxide thin film. The method comprises the following steps that S1, high-purity zinc serves as a target material, a high-purity aluminum piece is placed on the target face, a substrate is placed above the target material, the distance between the substrate and the target material is adjustable, high-purity nitrogen gas is led to carry out radio frequency magnetron reactive sputtering, and the aluminum-contained zinc nitride thin film obtained through preparation serves as a precursor; S2, after the precursor is prepared, vacuumizing is carried out, high-purity oxygen is led to carry out in-situ low-pressure oxidization on a precursor thin film, and the nitrogen aluminum co-doping p type zinc oxide thin film is obtained through preparation. According to the method, on the premise that the performance of the precursor is optimized, the content of active nitrogen in the thin film is improved, and therefore the concentration and the migration rate of a hole carrier are increased, the resistance rate of the zinc oxide thin film is reduced, the resistance rate of the obtained zinc oxide thin film is reduced to 10.84W*cm, the concentration of the carrier reaches +4.65*1018cm-3, an optical band gap is 3.27 eV, and the crystalline state and the optical property of the thin film are good.

The invention belongs to the technical field of ceramic kiln furniture and provides a corundum-mullite load bearing board and a preparation method. The corundum-mullite load bearing board comprises raw material compositions in the following mass percentage: 70 to 85 percent of alpha-Al2O3 particle material with the grain diameter of between 5 and 0.088 mm, 5 to 15 percent of alumina-silica sol fine powder with the grain diameter less than 0.08 mm, 5 to 15 percent of fused mullite fine powder with the grain diameter less than 0.088 mm, and 3 to 5 percent of bonding agent which is externally added. The characteristics of high purity and small particle size of alumina-silica sol are utilized to prepare the high-temperature creep-resistant load bearing board which has high purity and is formed by large-grained mullite bonded with corundum through high-temperature calcination, and the load bearing board does not deform and has good thermal shock resistance when the load bearing board is used at high temperature, and can be taken as the load bearing board used at a temperature higher than 1,650 DEG C in the fields of electronic ceramics and high temperature ceramics.

The invention provides a perovskite solar cell based on the interface layer of halogenated oxyhydroxide quantum dots and a preparation method, in particular, the halogenated oxyhydroxide quantum dots are prepared by a solution method, and are spin-coated on an electron transport layer supported by conductive glass The surface is used as an interface modification layer, and then a perovskite light-absorbing layer is prepared by liquid-phase spin coating, and a carbon back electrode is deposited by coating method to make a perovskite solar cell. The invention utilizes the group chemical properties, high electrical conductivity and tunability of the energy band structure of the halogenated oxyhydroxide quantum dots, on the one hand, passivates the surface defects of the electron transport layer and the perovskite layer, improves the quality of the perovskite film, and increases the number of electrons. The migration rate and reduction of carrier recombination, on the other hand, promote electron transfer and improve interfacial energy level alignment, enhance charge extraction and reduce energy loss, effectively improving the efficiency and stability of perovskite solar cells. The preparation technology of the invention is simple, the raw materials are cheap and easy to obtain, the material optimization and improvement space is large, and the invention has a great application prospect.