33results about How to "Reduce the number of grain boundaries" patented technology

The invention belongs to the technical field of ceramic kiln furniture and provides a corundum-mullite load bearing board and a preparation method. The corundum-mullite load bearing board comprises raw material compositions in the following mass percentage: 70 to 85 percent of alpha-Al2O3 particle material with the grain diameter of between 5 and 0.088 mm, 5 to 15 percent of alumina-silica sol fine powder with the grain diameter less than 0.08 mm, 5 to 15 percent of fused mullite fine powder with the grain diameter less than 0.088 mm, and 3 to 5 percent of bonding agent which is externally added. The characteristics of high purity and small particle size of alumina-silica sol are utilized to prepare the high-temperature creep-resistant load bearing board which has high purity and is formed by large-grained mullite bonded with corundum through high-temperature calcination, and the load bearing board does not deform and has good thermal shock resistance when the load bearing board is used at high temperature, and can be taken as the load bearing board used at a temperature higher than 1,650 DEG C in the fields of electronic ceramics and high temperature ceramics.

The present invention provides an all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> and a preparation method and an application thereof. Specifically, the invention isthat conductive glass is first spin-coated with an electron transfer layer and subsequently spin-coated with a lead bromide solution mixed with transition metal ions, then is spin-coated with a cesium bromide solution repeatedly; the non-porous perovskite film with a high crystallinity and a large grain size is prepared; and finally the all-inorganic perovskite solar cell based on transition metal ions doped CsPbBr<3> is assembled by blade coating of carbon back electrode. The invention reduces the defect density in the perovskite film by doping transition metal ions, simultaneously the energy band structure is adjusted; the energy loss of charge migration is reduced; and the separation, extraction and transfer of photogenerated charges and charge recombination are reduced, thereby the photoelectric conversion efficiency and long-term operation stability of the cell are improved. The invention has the advantages such as simple and feasible preparation method, large optimization spaceof material combination, no noble metal back electrode or hole transporting layer and low cost.

The invention belongs to the technical field of grapheme material preparation and discloses a method for improving the electrical conductivity of graphene thin films prepared by a normal-pressure chemical gas-phase sedimentation method. The method for improving the electrical conductivity comprises the steps that (1) copper foil is subjected to surface cleaning treatment; (2) the treated copper foil is subjected to high-temperature heat treatment, and the conditions of high-temperature heat treatment are that the flow speed of argon is 200-500 sccm, the flow speed of hydrogen is 0-50 sccm, and constant-temperature treatment is conducted at the temperature of 700-100 DEG C for 5-7 hours; (3) the copper foil subjected to high-temperature treatment is heated till the temperature is 900-1050 DEG C, and methane is led in for growth; and (4) leading-in of the methane and the hydrogen is stopped, leading-in of the argon is kept, cooling is conducted, and then the graphene thin films grown to copper piece substrates are obtained. According to the for improving the electrical conductivity of the graphene thin films prepared by the normal-pressure chemical gas-phase sedimentation method, operating is easy, extra equipment do not need to be additionally arranged, the cost is low, operating is easy, the purposes that sheet resistance of the graphene thin films is greatly reduced, and the electrical conductivity of the graphene thin films is improved can be achieved.

The invention provides a valve-controlled sealing lead-acid storage battery for starting and stopping of automobiles. The valve-controlled sealing lead-acid storage battery is characterized in that ytterbium is added into Pb-Ca-Sn positive electrode grid alloy, the main ingredient of the alloy is Pb, Ca accounts for 0.05%-0.09% of the mass of the grid alloy, Sn accounts for 1.0%-2.0% of the mass of the grid alloy, and Yb accounts for 0.005%-0.05% of the mass of the grid alloy; heat treatment is carried out on a grid for 5-60 minutes under the environment with the temperature of 250-320 DEG C; silicon dioxide is added into an AGM (Absorptive Glass Mass) partitioning plate, or silicon dioxide is added into electrolyte, and the content of the silicon dioxide in the electrolyte is 0.3%-1.5%. The valve-controlled sealing lead-acid storage battery provided by the invention has the advantages that by improvement on the grid alloy of the storage battery and combination of improvement on the alloy of the partitioning plate and structural improvement on a battery jar, not only are the characteristics such as the discharging depth, the discharging frequency and the specific energy of the starting and stopping battery achieved, but also the heating amount of the valve-controlled battery is reduced, the expansion and thermal runaway of the battery are prevented, the corrosion resistance of the grid of the battery is improved and the battery can work under the environment with the temperature of 70 DEG C at highest.

The invention discloses a method for casting a large-grained silicon ingot by adopting a directional-solidification growing method, mainly comprising the following steps of: (1) putting a monocrystalline silicon plate cut according to a certain crystal orientation on the bottom layer of a quartz crucible as seed crystals; (2) filling an appropriate quantity of polycrystalline silicon materials and doping elements on the seed crystals; (3) putting the crucible with the raw materials into a polycrystalline furnace, vacuumizing and heating to melt the silicon material at the upper part, and when the monocrystalline silicon plate starts to be melted at the later stage of melting, the temperature of the bottom of the crucible is controlled by adjusting the rise height of a heat-resistant cage; therefore, the seed crystals are partially melted; and (4) staring a crystal growing procedure, and forming a vertical temperature gradient by controlling the power of a heater and lifting the heat-resistant cage, so that the silicon crystals grow in the direction of the monocrystalline silicon plate which is not completely melted; and finally, carrying out annealing and cooling steps to obtain the large-grained polycrystalline silicon ingot.

A polycrystalline silicon thin film for a TFT and a display device using the same where the number of crystal grain boundaries exerts a fatal influence on movement of electric charge carrier, providing a distance 'S' between active channels of the TFT having dual or multiple channels with a relation S = mGs.sec [theta]- L, and also providing a display device in which uniformity of TFT characteristics is improved by synchronizing the number of the crystal grain boundaries included in each of the channels of the dual or multiple channels S = mGs.sec [theta]-L, Gs is a size of crystal grains of the polycrystalline silicon thin film, m is an integer of 1 or more, [theta] is an inclined angle where fatal crystal grain boundaries, that is, 'primary' crystal grain boundaries are inclined in a direction perpendicular to an active channel direction, and L represents a length of active channels for each TFT having dual or multiple channels.

The invention discloses a nano film material. Steps of preparation of a NiSe nano film, transfer of the NiSe nano film, construction of a NiSe nano film optical detector and the like are included. TheNiSe nano film with the non-layered structure, which is grown by a solid-phase reaction method, is good in quality, large in grain size and small in grain boundary number; according to the photoelectric detector prepared on the basis of the high-quality NiSe nano film, the obtained photocurrent is increased by 4 orders of magnitudes compared with that of a NiSe nano crystalline film; the preparation process is simple, the cost is low, the practical value is good, and the method can be used for preparing other non-layered structure material nano films compatible with a traditional planar process.

The invention provides a manufacturing method of a low temperature poly-silicon thin film, the low temperature poly-silicon thin film and a low temperature poly-silicon TFT substrate. According to themanufacturing method of the low temperature poly-silicon thin film, a refection layer of a silicon nitride material is formed through deposition on an amorphous silicon thin film layer, and a plurality of convex or concave arc surface structures are formed on the surface of the refraction layer; when an excimer laser beam is adopted to irradiate the amorphous silicon thin film layer, the amorphous silicon thin film layer is crystallized to form a low temperature poly-silicon thin film; in the process, a certain light scattering effect or a condensation effect can be generated when the excimerlaser beam passes through the arc surface structures of the refraction layer, so that a laser energy gradient is formed on the amorphous silicon thin film layer; and therefore, the crystallization direction of the amorphous silicon thin film layer can be controlled, the grain size is enlarged, and the grain boundary quantity is reduced, so that the mobility of the carriers of a TFT device can beimproved, and influence of the grain boundary to the leakage current can be lowered.

The invention discloses a compound thin film and a preparation method thereof, and a compound thin film solar cell, and relates to the cell technology field. The compound thin film is prepared by annealing an absorption layer precursor doped with Bi under a low-temperature condition. According to the compound thin film, VA element Bi doping is performed, in an annealing process, a doped Bi elementcan react to generate a low-melting-point compound and the low-melting-point compound is used as a fluxing agent to promote crystallization of an absorption layer thin film, and defects and compositecenters in the thin film are reduced so that quality of a film layer can be improved, corresponding cell device performance can be increased, a problem of growing an absorption layer of a high-quality compound thin film cell under a low-temperature preparation condition is effectively solved, and more possible ways are provided for promoting industrial development of a flexible PI substrate compound thin film solar cell.

The invention discloses a thermostat ceramic material and a preparation process thereof, and relates to the technical field of ceramic material processing. The thermostat ceramic material disclosed by the invention is prepared from the following raw materials in parts by weight: α-Al ₂ o ₃ 80-90 parts of fine powder, 5-10 parts of γ-alumina, MgO-Al ₂ o ₃ ‑3-5 parts of CaO glass powder, 2-5 parts of silicon oxide, 2-3 parts of binder and 1.5-2 parts of dispersant; the preparation process is: α‑Al ₂ o ₃ Micronized powder and MgO‑Al ₂ o ₃ ‑The surface of the CaO glass powder is modified with a coupling agent, then mixed and reacted to obtain a pre-mixture; then mixed and ground with other components of the ceramic material to obtain a slurry; granulated and sintered. The invention provides a thermostat ceramic material, which is mainly used on the thermostat housing, supporting parts and transmission parts, has high mechanical strength, compressive strength and insulation resistance, and has low thermal conductivity and Excellent wear resistance ensures the safe use of the thermostat and greatly prolongs the service life of the thermostat.

The invention provides a perovskite solar cell synthesized under the assistance of monomer auto-polymerization and a preparation method thereof, and the method specifically comprises the following steps: adding an easily-polymerized monomer into a cesium bromide aqueous solution, then spin-coating the monomer on a titanium dioxide mesoporous electronic layer loaded lead bromide film, and introducing a monomer auto-polymerization assisted grain growth strategy to prepare the perovskite solar cell. A perovskite film is synthesized through a two-step spin-coating method, and finally, a carbon electrode is scraped and coated to assemble the solar cell. A two-step method capable of accurately controlling the raw material ratio is adopted, monomer additive self-polymerization is utilized to regulate the crystallization speed of perovskite, an electron-donating group of a monomer passivates metal ion state defects of perovskite, monomer self-polymerization provides a space for growth of crystal grains, stress generated in the annealing process of the perovskite thin film is eliminated, and the perovskite thin film is prepared. The high-purity perovskite thin film with large grain size, low defect state density, high energy level matching degree and low surface roughness is prepared, and the photovoltaic performance of the cell is improved. The method is simple in preparation steps, high in repeatability, green and economical, and has commercial application prospects.

The invention provides an interconnecting structure for enhancing stress migration reliability, belonging to the technical field of integrated circuits, comprising: a metal 1 and a metal 2 electrically connected with each other, wherein the width of the metal 1 is larger than the width of the metal 2; a plurality of grooves are arranged in the metal. The invention has the advantages that the totalvacancy content in the interconnect structure is relatively reduced due to the existence of grooves; a large tensile stress gradient exists in the vicinity of the groove, and a large number of vacancies in the metal 1 will accumulate in the vicinity of the groove, especially in the dense region of the groove; the tensile stress gradient at and near the contact interface between metal 1 and metal2 is reduced, the tensile stress gradient at and near the contact interface between a via hole and the metal 1 is reduced, and the migration velocity of vacancy to the key position is reduced. Therefore, the present invention reduces the amount of vacancies that can migrate to key locations and the migration speed of the vacancies, thereby improving stress migration reliability.

The invention provides columnar crystal zirconium oxide powder and a preparation method and application thereof. The composition of the columnar crystal zirconium oxide powder is Al<x>YZr<1-a>O<2-0.5a+1.5x>, wherein x is greater than or equal to 0 and less than or equal to 0.003, and a is greater than or equal to 0.03 and less than or equal to 0.12. The column diameter distribution D50 of the columnar crystals in the columnar crystal zirconium oxide powder is 2-3 [mu]m; and the average length of columnar crystals in the columnar crystal zirconium oxide powder is 10-20 [mu]m. The preparation method comprises the steps of liquid preparation, precipitation boiling, separation and crystallization which are carried out in sequence. The linear transmittance of a ceramic chip prepared from the columnar crystal zirconia powder in a visible light range is larger than or equal to 53%, the sintering temperature of the ceramic chip in the preparation process is smaller than or equal to 1100 DEG C, a preparation process is simplified, and energy consumption and production cost are reduced.

The invention relates to a strip-shaped composite substrate for LED epitaxy and a preparation method and a preparation device thereof, the substrate is a sapphire substrate, patterns on the sapphire substrate are strip-shaped, a plurality of patterns are periodically arranged, and an interval exists between every two adjacent patterns; the orientations of the patterns are consistent; the pattern bottom width is greater than the top width; the pattern is made of Al2O3, the side wall of the pattern is covered with a plurality of SiO2 layers, and gaps exist between the SiO2 layers and the sapphire substrate. According to the composite substrate, the light emitting efficiency of an LED is improved through the periodically arranged strip-shaped patterns, the polarization direction of emergent light can be controlled, and polarized light is obtained while the light emitting efficiency of the LED is improved. The preparation method can be used for preparing a multi-layer composite structure, the polarized light extraction efficiency is improved, meanwhile, the deposition position of the composite structure can be controlled, the composite structure is only deposited on the pattern side wall, no pattern area is deposited, and the purpose is that the epitaxial technology does not need to be changed.