7 results about "Zinc nitride" patented technology

The application discloses an elastic anti-pollution flashover anti-icing anti-corrosion coating material and a preparation method thereof. The coating material comprises, in parts by weight, 80-120 parts of a silicone modified polycarbonate polyurethane resin, 2-10 parts of a modifier, 15-30 parts of a pigment and filler, 0.5-1 part of a defoaming agent, 0.5-1 part of a leveling agent and 0.5-1 part of a dispersing agent. The modifier is a nitrogen-doped porous carbon loaded with phosphate or a nitrogen-doped porous carbon modified by zinc nitride loaded with phosphate. The nitrogen-doped porous carbon and the nitrogen-doped porous carbon modified by zinc nitride in a layered structure are added to the coating system as a barrier modifier, and the carbon material loaded with phosphate is added to the coating. Under long-term use of the coating, the phosphate released by the carbon material loaded with phosphate can be stably hydrolyzed, so that loose iron oxides are converted into a corrosion-resistant phosphide film, and the corrosion is inhibited.

The present invention discloses a zinc nitride quantum dot and its application as a fluorescent nanosensor in the detection of Cu<supgt;2+< / supgt> and Mn<supgt;2+< / supgt>. The complexation of blue fluorescent quantum dots containing rich functional groups with metal ions Cu<supgt;2+< / supgt> and Mn<supgt;2+< / supgt> results in a strong quenching of the blue fluorescence, thereby realizing the change of the fluorescence color of this probe from blue to colorless for the detection of Cu<supgt;2+< / supgt> and Mn<supgt;2+< / supgt>. This method has good visualization effects, high selectivity, high sensitivity, and low detection limits. In addition, the chemicals and technologies used have less economic harm, stable materials, and high quantum yields. It has been successfully coated on paper strips and can be used as a mobile detector for on-site local sensing of heavy metal ions.

The utility model discloses a glass cover plate with color-changing stripes and corrosion resistance, which comprises a glass body, a zinc nitride layer is arranged on the upper surface of the glass body, a zinc oxide layer is arranged on the upper surface of the zinc nitride layer, a silicon carbide layer is arranged on the upper surface of the zinc oxide layer, and the silicon carbide layer is arranged on the upper surface of the silicon carbide layer. The lower surface of the glass body is provided with a plurality of color-changing ink areas, the color-changing ink areas are distributed on the edge of the glass body, and the lower surfaces of the color-changing ink areas are provided with isolation ink layers. By utilizing the zinc nitride layer, excellent adhesive force and stability can be provided, and the coating can be ensured to be firmly attached to the surface of the glass cover plate. By utilizing the zinc oxide layer, excellent corrosion resistance and optical performance can be provided, the weather resistance and transparency of the coating are enhanced, and the transparency and optical clarity of the cover plate are kept. By utilizing the silicon carbide layer, excellent hardness, wear resistance and corrosion resistance can be provided, and the surface of the glass cover plate is effectively prevented from being scratched and chemically eroded.

The application discloses a zinc telluride N-doped target material and a preparation method thereof, and relates to the technical field of target material preparation. The preparation method comprises the following steps: zinc telluride powder, tellurium powder, zinc powder and zinc nitride powder are mixed according to a mass ratio of (50-70):(20-25):(3-10):(7-15), pre-pressing treatment is performed, and then vacuum hot-pressing treatment is performed, including sequentially performing a first temperature-rising and temperature-maintaining stage, a second temperature-rising and temperature-maintaining stage and a pressure-rising and pressure-maintaining and temperature-maintaining stage, and then being cooled to room temperature, so that the zinc telluride N-doped target material is obtained. The zinc telluride N-doped target material has high carrier concentration due to the nitrogen vacancies and zinc interstitials of zinc nitride, the zinc telluride has low resistivity due to the high carrier concentration, the zinc nitride doping introduces donor defects, the resistivity of the original zinc telluride is reduced, the density and purity of the prepared target material are improved, the conductivity and uniformity of the zinc telluride in film plating are improved, and the requirement for equipment is low and the production cost is saved.

The present invention discloses a copper-zinc-tin nitride Schottky junction and a preparation method thereof, wherein the method comprises the following steps: in a flowing nitrogen and argon atmosphere, depositing a zinc-tin alloy target with a Zn:Sn ratio of 5:1 on a substrate by radio frequency sputtering, thereby obtaining a zinc-tin nitride thin film. In a flowing argon atmosphere, the zinc-tin nitride thin film is annealed at 300 to 400°C, thereby obtaining an annealed zinc-tin nitride thin film. In a flowing argon atmosphere, depositing a copper target on the annealed zinc-tin nitride thin film by direct current sputtering, thereby obtaining a copper-zinc-tin nitride Schottky junction. The present invention solves the problem that the copper-zinc-tin nitride Schottky junction prepared by the existing method has poor rectification effect and no photovoltaic effect.

The invention relates to a four-layer metal oxide / metal / metal / metal oxide coating that provides multispectral camouflage. Said coating having camouflage characteristics provides thermal, multispectral and electromagnetic protection by offering reflection, absorption and transmission properties against infrared (IR), ultraviolet (UV) and electromagnetic waves. As the ceramic layer, it comprises titanium dioxide (TiO₂), titanium nitride (TiN), zinc oxide (ZnO), zinc nitride (Zn₃N₂), iron (III) oxide (Fe₂O₃), iron (II) oxide (FeO), iron nitride (Fe₂N), aluminium oxide (Al₂O₃), aluminium nitride (AlN), tin oxide (SnO₂), magnesium oxide (MgO), magnesium nitride (Mg₃N₂), calcium oxide (CaO), calcium nitride (Ca₃N₂), cobalt oxide (CoO), tungsten oxide (WO₃), vanadium oxide (V₂O₅), vanadium nitride (VN), manganese oxide (MnO₃), chromium oxide (Cr₂O₃), chromium nitride (CrN), nickel oxide (NiO), boron oxide (B₂O₃), boron nitride (BN) or barium oxide (BaO). As the metal layer, copper (Cu), aluminium (Al), nickel (Ni), cobalt (Co), silver (Ag), gold (Au), iron (Fe), tungsten (W), tin (Sn), zinc (Zn), magnesium (Mg), vanadium (V), chromium (Cr), lead (Pb) or platinum (Pt) is used to provide protection against thermal cameras and UV rays, while electromagnetic waves are blocked. The adhesive-free layered structure is resistant to wear and provides versatile protection for military clothing and mobile platforms by optimising reflection and transmission.

The invention discloses a high-transmissivity amorphous zinc nitride film and a preparation method thereof, and relates to the technical field of semiconductor film materials.The preparation method comprises the following steps that firstly, a quartz substrate is selected as a substrate, metal zinc is selected as a sputtering target material, the distance between the substrate and the target material is adjusted, and a vacuum cavity cover is covered; vacuumizing, heating the substrate, introducing nitrogen and argon into a vacuum cavity, and pre-sputtering the metal zinc in a radio frequency magnetron sputtering mode without opening a target baffle; opening a target baffle, performing radio frequency magnetron sputtering on the pre-sputtered metal zinc, and depositing a zinc nitride film on the substrate; and finally, carrying out cooling treatment to obtain the amorphous zinc nitride film. According to the high-transmissivity amorphous zinc nitride film and the preparation method thereof, key parameters such as sputtering air pressure are controlled within a specific range, the growth kinetics of the film is effectively regulated and controlled, and the average transmissivity of the prepared amorphous zinc nitride film in a visible-near infrared light region is as high as 73%-86.6%.