Method for preparing nitrogen oxygen zinc thin film

A technology of zinc oxynitride and thin film, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of low solid solubility, high carrier mobility, low resistivity, etc., and achieve migration High efficiency, good stability, and low resistivity

Active Publication Date: 2013-12-25
SHENZHEN DANBANG INVESTMENT GROUP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is: to make up for the deficiencies of the above-mentioned prior art, to propose a preparation method of zinc oxynitride thin film, to solve the problem of low so

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preparation example Construction

[0022] The present invention provides a kind of preparation method of zinc oxynitride film, in one embodiment, comprises the following steps:

[0023] Using radio frequency magnetron sputtering, the zinc nitride target with a volume percentage of 99.9-99.999% is used as the sputtering target, and the distance between the sputtering target and the substrate is 20-150mm. 99.9-99.999% argon is the sputtering gas, the substrate temperature is 25-150°C, at 0.5-5W / cm 2 Sputtering is carried out under a certain power density, and the background vacuum of the sputtering chamber is less than 1×10 -7 Torr, first pre-sputter with the argon gas for a period of time, and then use oxygen with a volume percentage of 99.9-99.999% as the reaction gas, the oxygen flow rate is 0.1-60 sccm, the argon gas flow rate is 5-100 sccm, and the sputtering pressure is controlled at 0.1 Between -10.0Pa, the zinc oxynitride thin film is obtained. In the zinc oxynitride thin film, the number of Zn atoms acc...

Embodiment 1

[0032] Using radio frequency magnetron sputtering, 99.99% zinc nitride target is used as the sputtering target, the distance between the zinc nitride target and the substrate is 60mm, the radio frequency frequency is 13.56MHz, and 99.999% argon is used as the sputtering gas, 99.999 % oxygen is the reaction gas, and the proportion of the gas is controlled by the gas flow meter. The substrate temperature was kept at 25°C during sample growth, and the sputtering power density was 2W / cm 2 , the background vacuum of the sputtering chamber is 0.8×10 -7 Torr, pre-sputtering 10min. The flow rate of oxygen gas is 6 sccm, no nitrogen gas is introduced, the flow rate of argon gas is 20 sccm, and the sputtering pressure is 1.3 Pa.

[0033] In the chemical composition of the prepared film, the number of Zn atoms accounts for 58%, and the atomic number ratio of nitrogen and oxygen is N:O=1:1. The Accent HL5500PC Hall effect test system was used to test the carrier concentration and Hall ...

Embodiment 2

[0044] Using radio frequency magnetron sputtering, 99.99% zinc nitride target is used as the sputtering target, the distance between the zinc nitride target and the substrate is 60mm, the radio frequency frequency used is 13.56MHz, and 99.999% argon is used as the sputtering gas , 99.999% of the oxygen is the reaction gas, and the proportion of the gas is controlled by the gas flow meter. The substrate temperature was kept at 25°C during sample growth, and the sputtering power was 3.3W / cm 2 , the background vacuum of the sputtering chamber is 0.9×10 -7 Torr, pre-sputtering 10min. The oxygen flow rate is 1 sccm, the nitrogen gas is not fed, the argon gas flow rate is maintained at 50 sccm, and the sputtering pressure is 1.5 Pa.

[0045] In the chemical composition of the prepared film, the number of Zn atoms accounts for 66%, and the atomic number ratio of nitrogen and oxygen is N:O=2:1. The Accent HL5500PC Hall effect test system was used to test the carrier concentration a...

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Abstract

The invention discloses a method for preparing a nitrogen oxygen zinc thin film. Radio frequency magnetron sputtering is used, a zinc nitride target which is 99.9-99.999% in volume percentage is taken as sputtering target materials, and the distance between the target materials and a substrate is 20-150mm; under certain radio frequency, argon which is 99.9-99.999% in volume percentage is taken as sputtering gas, sputtering is carried out at the substrate temperature of 25-150DEG C and at power density of 0.5-5W/cm2, and the background vacuum of a sputtering room is smaller than 1*10-7torr; pre-sputtering is carried out for a period of time through the argon, and then oxygen which is 99.9-99.999% in volume percentage is taken as reaction gas to obtain the nitrogen zinc oxide thin film with oxygen flow of 0.1-60sccm and argon flow of 5-100sccm and at sputtering pressure of 0.1-10.0Pa, wherein the atomic number of Zn accounts for 51-66%, and N:O=1:3-2:1. The method for preparing the nitrogen zinc oxide thin film solves the problem that the nitrogen is low in solid solubility in zinc oxide, and the prepared n-type nitrogen zinc oxide thin film is high in carrier mobility and low in specific resistance.

Description

technical field [0001] The invention relates to the preparation of a semiconductor thin film, in particular to a preparation method of a zinc oxynitride thin film. Background technique [0002] In the past ten years, the liquid crystal display device with silicon TFT as the driving unit has achieved rapid development due to its advantages of small size, light weight and high quality, and has become the mainstream information display terminal. However, with the improvement of people's performance requirements for display device resolution, response speed, and stability, TFTs with silicon materials as the active layer have exposed a series of problems. Compared with the amorphous silicon TFT, the oxide semiconductor TFT has the following advantages: (1) high field effect mobility; (2) high switching ratio; (3) low manufacturing process temperature; (4) large-area amorphous film can be produced , good uniformity, and good and consistent electrical characteristics; (5) less aff...

Claims

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Application Information

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IPC IPC(8): H01L21/363C23C16/40
Inventor 刘萍
Owner SHENZHEN DANBANG INVESTMENT GROUP
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