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Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film

A zinc oxide film, co-doping technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problem of reducing film hole carrier concentration and mobility, unfavorable p-type zinc oxide film Application, poor crystallinity of the precursor film, etc., to achieve the effect of good crystalline state and optical properties of the film, increasing concentration and mobility, and optimizing sputtering time

Active Publication Date: 2015-08-05
LINGNAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The co-doping of nitrogen and aluminum significantly reduces the resistivity of the p-type zinc oxide film. However, in the prior art, the crystallinity of the prepared precursor film is poor, and sheet-like clusters are prone to appear, which reduces the hole-carrying current in the film. Subconcentration and mobility, resulting in high resistivity of the film, which is not conducive to the application of p-type zinc oxide film

Method used

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  • Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film
  • Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film
  • Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film

Examples

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Embodiment 1

[0031] In this embodiment, an aluminum-nitrogen co-doped p-type zinc oxide thin film is prepared on a quartz glass substrate.

[0032] S1. Prepare the precursor: the substrate is made of quartz glass, soaked in acetone, absolute ethanol and deionized water in sequence, cleaned by ultrasonic waves, and dried with compressed air for later use; high-purity zinc with a purity of 99.999% is used as the target material. Place high-purity aluminum sheets of different areas on the target surface, control the content of aluminum in the sample to 2%, place a substrate above the target, and the distance between the substrate and the target is 5 cm, and the reaction chamber is vacuum pumped to 10 -4 Pa, the substrate temperature is set to 100°C, the RF source frequency is 12.56MHz, the input power is 160W, the working gas is nitrogen (99.999%) and argon (99.999%); before reactive sputtering, rotate the baffle to cover the substrate Bottom, use argon plasma to clean the pollutants on the ...

Embodiment 2

[0036] In this embodiment, an aluminum-nitrogen co-doped p-type zinc oxide thin film is prepared on a single crystal silicon wafer substrate.

[0037] S1. Preparation of precursor: the substrate is made of single crystal silicon wafer, which is soaked in acetone, absolute ethanol and deionized water in sequence, cleaned by ultrasonic waves, and dried with compressed air for later use; high-purity zinc with a purity of 99.999% is used as the target material, Place high-purity aluminum sheets of different areas on the target surface, control the content of aluminum in the sample to 2.5%, place a substrate above the target, and the distance between the substrate and the target is 7cm, and the reaction chamber has a background vacuum draw up to 10 -4 Pa, the substrate temperature is set to 150°C, the RF source frequency is 12.56MHz, the input power is 120W, the working gas is nitrogen (99.999%) and argon (99.999%); before reactive sputtering, rotate the baffle to cover the substr...

Embodiment 3

[0041] In this embodiment, an aluminum-nitrogen co-doped p-type zinc oxide thin film is prepared on a single crystal zinc oxide substrate.

[0042] S1. Preparation of precursor: the substrate is made of single crystal zinc oxide, soaked in acetone, absolute ethanol and deionized water in sequence, cleaned by ultrasonic waves, and dried with compressed air for later use; high-purity zinc with a purity of 99.999% is used as the target material , place high-purity aluminum sheets of different areas on the target surface, control the content of aluminum in the sample to be 3%, place a substrate above the target, the distance between the substrate and the target is 6cm, and the background of the reaction chamber Vacuum down to 10 -4 Pa, the substrate temperature is set to 200°C, the RF source frequency is 12.56MHz, the input power is 140W, the working gas is nitrogen (99.999%) and argon (99.999%); before reactive sputtering, rotate the baffle to cover the substrate Bottom, use ar...

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Abstract

The invention provides a method for preparing a nitrogen aluminum co-doping p type zinc oxide thin film. The method comprises the following steps that S1, high-purity zinc serves as a target material, a high-purity aluminum piece is placed on the target face, a substrate is placed above the target material, the distance between the substrate and the target material is adjustable, high-purity nitrogen gas is led to carry out radio frequency magnetron reactive sputtering, and the aluminum-contained zinc nitride thin film obtained through preparation serves as a precursor; S2, after the precursor is prepared, vacuumizing is carried out, high-purity oxygen is led to carry out in-situ low-pressure oxidization on a precursor thin film, and the nitrogen aluminum co-doping p type zinc oxide thin film is obtained through preparation. According to the method, on the premise that the performance of the precursor is optimized, the content of active nitrogen in the thin film is improved, and therefore the concentration and the migration rate of a hole carrier are increased, the resistance rate of the zinc oxide thin film is reduced, the resistance rate of the obtained zinc oxide thin film is reduced to 10.84W*cm, the concentration of the carrier reaches +4.65*1018cm-3, an optical band gap is 3.27 eV, and the crystalline state and the optical property of the thin film are good.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for preparing a nitrogen-aluminum co-doped p-type zinc oxide thin film. Background technique [0002] Due to the strong demand for short-wavelength light-emitting devices in fields such as information technology, optoelectronic technology, and aerospace, wide-bandgap semiconductors such as zinc oxide, gallium nitride, and silicon carbide have become research hotspots worldwide. Compared with other wide-bandgap semiconductor materials, zinc oxide has many advantages: the exciton binding energy is as high as 60 meV, which is conducive to obtaining efficient and stable room temperature exciton radiation; it can be prepared at a lower temperature, reducing the impurities introduced during material preparation and defects, and can greatly simplify the production process; it has higher thermal and chemical stability; it has stronger radiation resistance and can meet th...

Claims

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Application Information

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IPC IPC(8): C23C14/00C23C14/08C23C14/35
Inventor 张军邵乐喜邹长伟
Owner LINGNAN NORMAL UNIV
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