The invention belongs to the technical filed of conductive thin films, in particular relates to a surface modifying method for improving the surface power function of an
indium tin oxide transparent conductive film. The surface modifying method comprises the following steps: a large volume of
plasma, containing
oxygen,
chlorine, or
fluorine strong electric negative elements, is generated in a
vacuum chamber in a
radio frequency or
microwave discharge excitation way; sheet glass coated with an
indium tin oxide (ITO) thin film is placed on a
metal substrate bench which is dipped in the
plasma;
high voltage negative pulses are applied on the substrate bench, thus forming a
negative voltage sheath layer between the ITO thin film and the
plasma;
oxygen ions are accelerated by an
electric field to move toward the surface of the ITO thin film in the sheath layer; and high-energy
oxygen ions are injected to the surface of the ITO thin film and reserved in a
surface layer of the ITO thin film, so that O / (Sn+In) atom proportion of the surface of the ITO thin film is increased, and then the surface power function of the ITO thin film is improved. The ITO thin film modified by the surface modifying method provided by the invention is applied as an
anode of an organic
light emitting diode (
OLED), in this way, the drive
voltage of a component is reduced greatly, the current stability of the component is improved, the light efficiency and brightness are enhanced, and the service life of the component is prolonged.