Nano film material

Abstract

The invention discloses a nano film material. Steps of preparation of a NiSe nano film, transfer of the NiSe nano film, construction of a NiSe nano film optical detector and the like are included. TheNiSe nano film with the non-layered structure, which is grown by a solid-phase reaction method, is good in quality, large in grain size and small in grain boundary number; according to the photoelectric detector prepared on the basis of the high-quality NiSe nano film, the obtained photocurrent is increased by 4 orders of magnitudes compared with that of a NiSe nano crystalline film; the preparation process is simple, the cost is low, the practical value is good, and the method can be used for preparing other non-layered structure material nano films compatible with a traditional planar process.

Description

technical field [0001] The invention belongs to the field of semiconductor thin film materials and relates to a nano thin film material prepared by a solid phase reaction method. Background technique [0002] Graphene and other 2D materials, including hexagonal boron nitride and transition metal sulfides, have attracted extensive attention due to their unique structures and properties. In particular, high-quality, large-area two-dimensional films can be prepared on specific substrates by methods such as chemical vapor deposition, which significantly accelerates the application and development of two-dimensional materials. Inspired by layered two-dimensional materials, it can be predicted that nanofilms of non-layered materials are compatible with traditional planar processes, and are more conducive to their applications than other dimensions. Moreover, compared with films composed of nanocrystals, the prepared non-layered nanofilms with large-sized grains have superior prop...

AI Technical Summary

Problems solved by technology

Nanofilms of large-area non-layered materials can be epitaxially grown on single crystal substrates by molecular beam epitaxy, but the cost is high