19 results about "Planar process" patented technology

The invention provides a semiconductor device and a manufacturing method thereof, and belongs to the technical field of semiconductors. According to the semiconductor device, a first gate structure is arranged in a buried layer on a substrate, and a second gate structure is arranged on the top surface of the first gate structure and the side wall and the top surface of a channel structure; the second gate structure and the first gate structure can be connected and jointly surround the surface of the channel structure, so that a four-side ring gate structure is formed, four-side control of the channel structure can be realized, the control capability of the gate is improved, the short-channel effect is reduced, the structure is simple, the manufacturing process is not complicated, the plane process and the SOI process are compatible, and the manufacturing cost is low. According to the invention, the process difficulty and cost can be greatly reduced, the design has high flexibility and expansibility, the integration with millimeter waves and high-power radio frequency based on the SOI process is easier, and the cost and power consumption can be further reduced.

The invention relates to the technical field of semiconductor devices, in particular to a semiconductor device based on a SiC material and a manufacturing process of the semiconductor device. The device comprises an N + type SiC substrate, an N-type composite buffer layer which is arranged on the substrate and has a concentration gradient, an N-type drift region which is arranged on the buffer layer, and an active region which is composed of a first conduction type region and a second conduction type ion implantation region. The innovation lies in that a composite buffer layer structure is adopted to effectively suppress dynamic avalanche and optimize the reverse recovery characteristic, and meanwhile, a composite structure of a junction termination extension region and a field limiting ring with shallower junction depth is integrated in a terminal region, so that the process complexity is simplified on the premise of ensuring high breakdown voltage. According to the manufacturing process, impurity activation of the active region and the terminal region is synchronously completed through two times of ion implantation and one time of high-temperature annealing, and the manufacturing process is completely compatible with an existing SiC plane process platform. The device realizes excellent compromise between reverse recovery charge and forward voltage drop, and has the characteristics of superspeed, soft recovery, low loss and high reliability.

The application discloses an active flat-plate-passive ridge structure gain waveguide and a preparation method thereof. The scheme can break through the strong light field limitation, significantly increase the mode field area, and fully utilize the low-loss transmission characteristics of the ridge waveguide structure by limiting the injected ions in the active flat-plate area and guiding light only in the ridge. Moreover, the structure has excellent process friendliness and preparation economy. The two preparation technologies provided by the application are completely based on mature semiconductor planar processes, do not need to introduce complex and expensive special equipment or steps, and can be realized through core steps such as single patterning etching, thin film growth, polishing and thinning and ion implantation. The process flow is greatly simplified, which means that the preparation process has higher process tolerance and production yield and lower preparation cost. The preparation process can realize rapid large-scale production relying on the existing semiconductor manufacturing line and provide a feasible process solution for the industrialization of integrated photonic devices.

This invention discloses a colloidal quantum dot dual-mode detector and its fabrication method. The colloidal quantum dot dual-mode detector comprises, from bottom to top, a substrate, a bottom electrode, a photodiode layer, an electric field modulation layer, a gain device layer, and a top electrode, stacked sequentially. Through an innovative vertically stacked bandgap design, this invention integrates a colloidal quantum dot photodiode and a multi-junction gain structure within a single device for the first time. The device intelligently modulates the direction of the internal electric field using an external bias voltage, achieving precise and rapid switching between high-gain weak-light detection and high-linearity strong-light detection modes. It also fundamentally suppresses dark current, solving the problems of excessive noise and poor stability in traditional gain devices. Furthermore, the device maintains high response speed and excellent stability while possessing a compact structure and high compatibility with existing planar processes, demonstrating excellent process compatibility and large-scale fabrication potential, providing a stable and reliable technical foundation for the development of high-resolution infrared imaging devices.

This invention discloses a MEMS capacitive pressure sensor structure and its manufacturing method, belonging to the field of pressure sensor technology. It employs a planar capacitor structure, where a doped layer is formed on a substrate to create the lower electrode of the capacitive pressure sensor. Multiple structural layers are deposited on this doped layer to form the upper electrode. A first insulating dielectric layer and a cavity are disposed between the upper and lower electrodes, from bottom to top. This invention features a simple structure and convenient fabrication. Furthermore, the entire fabrication process is performed on the front side of the substrate, a planar process, eliminating the need for front-back alignment and facilitating single-chip integration with CMOS technology.

The application relates to the technical field of microwave radio frequency devices, in particular to an ultra-wideband miniaturized balun based on an integrated defect ground structure. The balun comprises top layer metal, upper layer dielectric, middle layer metal, lower layer dielectric and bottom layer metal which are stacked in sequence from top to bottom, wherein the top layer metal is a signal transmission and function realization layer, is used for forming a single-ended input microstrip feed network and a symmetrical differential output microstrip structure, and comprises a step impedance section and a local patch to adjust the equivalent electrical length and the wideband amplitude and phase consistency. Through the stacked architecture of "top layer step impedance resonator-middle layer dielectric integrated defect ground structure slow wave unit-bottom layer complete ground", while maintaining the realization possibility of the planar PCB process, the dielectric integrated defect ground structure is introduced to constrain and slow the electromagnetic field, so that the equivalent electrical length is significantly compressed and the realization efficiency of the wideband balanced conversion is improved.

The invention discloses a downward-source MOS device based on a plane MOS process and a preparation method, and relates to the technical field of semiconductor devices, the downward-source MOS device comprises a semiconductor substrate, an active region and a gate region, the active region is formed on the surface of the semiconductor substrate, and the gate region is located above the active region; a drain electrode and a source electrode are arranged in the active region, the drain electrode on one side is electrically connected to the front surface of the chip through a forward metal electrode, and the forward metal electrode is located in the gate region; the source electrode on the other side is communicated with the semiconductor substrate through the electrode connection area and forms good ohmic contact, and a substrate metal electrode is arranged at the bottom of the semiconductor substrate. According to the invention, the layout is reasonable, the structure is compact, the process cost is low, compared with a Diodes heterostructure, two mask steps of a main groove and a field plate groove are reduced, and stress and defects caused by groove filling are avoided; the chip is simple in structure and high in integration level, compared with an Infineon packaging-level source bottom, source interconnection is directly achieved in the chip, the multi-device stacking design is supported, and the occupied space of a bonding pad and a lead channel is saved.

To provide a method for processing bonded wafers that can improve productivity. [Solution] The present invention relates to a method for transferring a first device to a second wafer by peeling off the first substrate side from a bonded wafer (300) formed by bonding a first wafer (100), on which a first device (131) is formed on the surface (111) side of a first substrate (110), to a second wafer (200). The method involves a laser processing step in which a laser beam (LB) having a wavelength that is transparent to the first substrate is irradiated from the back surface (102) of the first wafer and focused into the first substrate near the bonding surface (301) between the first wafer and the second wafer to form a planar processed layer (303) in the first wafer, and a separation step in which the processed layer is used to separate the first substrate side from the second wafer while the first device of the first wafer remains bonded to the second wafer.

The utility model provides a thin-walled workpiece plane machining pull-down expansion sleeve type positioning mechanism which comprises a machine frame, a thin-walled workpiece positioning mechanism is installed on the machine frame, an expansion sleeve mechanism is installed on the positioning mechanism, the machine frame comprises a base, vertical side plates are installed on the base in a front-back symmetry mode, and the vertical side plates are connected with the expansion sleeve mechanism. A horizontal mounting plate is transversely arranged between the upper portions of the two vertical side plates, the thin-wall part positioning mechanism comprises a special-shaped limiting seat arranged corresponding to the plane of the thin-wall part, and the special-shaped limiting seat is fixed to the horizontal mounting plate. According to the utility model, the design is reasonable, the whole plane is processed by the expansion sleeve type positioning mechanism under the condition of no pressing point, the clamping stability and the processing stability of a workpiece can be ensured, the problems of tool collision caused by poor clamping of the workpiece and defective products caused by poor processing are avoided, and specialized and safe production is facilitated.

The utility model discloses a series formula fast recovery epitaxial diode module and high temperature high pressure three -phase rectifier module, design the shell base of molybdenum copper material, adopt the fast recovery epitaxial diode chip of epitaxial plane technology and inner lead, vacuum welding position chip lead component in eutectic furnace of inner lead, then in hot welding platform aluminium nitride clad copper insulating plate, chip lead component and shell lead post implement welding, wherein, shell lead post is connected in two aluminium nitride clad copper insulating plate that need series, finally, the shell ceramic cover is bonded with shell and realizes series formula fast recovery epitaxial diode module. The junction temperature of diode module is improved to greater than 180 DEG C, and the reverse working voltage is greater than 1200V based on the epitaxial plane technology characteristics of the application, and the working frequency can be improved to greater than 8000HZ in combination with the platinum extension operation in epitaxial plane technology, and the assembly structure is simple, and the high temperature high pressure three -phase rectifier module realized on the basis has the advantages of simple assembly, cost controllable.

The application discloses a source-down MOS device based on a planar MOS process and a preparation method, relates to the technical field of semiconductor devices, and comprises a semiconductor substrate, an active region and a gate region, the active region is formed on the surface of the semiconductor substrate, and the gate region is located above the active region; a drain and a source are arranged in the active region, the drain on one side is electrically connected to the front surface of a chip through a forward metal electrode, and the forward metal electrode is located in the gate region; the source on the other side is in communication with the semiconductor substrate through an electrode connecting area and forms a good ohmic contact, and a substrate metal electrode is arranged at the bottom of the semiconductor substrate. The application has the advantages of reasonable layout, compact structure, low process cost, reduced main groove and field plate groove mask steps compared with the heterostructure of Diodes, avoided stress and defects caused by groove filling, high integration, direct realization of source interconnection in the chip compared with the package-level source bottom of Infineon, support for multi-device stacking design, and saved pad and lead channel space.

A processing device for planar processing a workpiece to a desired thickness is provided. A processing device (1) for planar processing a non-circular workpiece (W) using a grinding wheel (21) has an adsorption member (33) capable of adsorbing and holding the workpiece (W), and an attachment (37) provided on the outer peripheral side of the adsorption member (33), made of a material more difficult to grind than the adsorption member (33), and capable of contacting the grinding wheel (21) at the time of self-grinding of the adsorption member (33).

This invention discloses a multi-layer nested bending superconducting magnet assembly method, belonging to the field of heavy ion therapy equipment manufacturing technology. Specifically, it includes the following steps: 1) Coil frame pre-assembly: After machining the grooves on each coil frame, burrs and chips are cleaned from the surface; the coil frames are sequentially nested and connected on the beam center tube from the inside out, with both ends of the coil frames aligned to complete the pre-assembly; 2) Concentricity adjustment: The gaps between adjacent coil frames are adjusted sequentially from the inside out to ensure concentricity; after adjustment, G10 shims are placed between each coil frame for support; 3) Drilling fixing screw holes; 4) Winding the coil; 5) Installing the end plate; 6) Wiring. In this invention, when machining the grooves on each layer of the coil frame, process planes are machined in the four directions (up, down, left, and right) at both ends of the coil frame. These process planes serve as reference planes, providing assembly and measurement benchmarks for concentricity alignment of each layer of the coil frames during assembly.

The utility model relates to the technical field of rubber-coated wheel production, and discloses rubber-coated wheel plane treatment equipment which comprises a bottom plate and a rubber-coated wheel, a positioning seat is mounted on the upper side of the middle of the bottom plate, and a driving mechanism for driving the positioning seat to rotate is mounted in the middle of the bottom plate in a penetrating manner; c-shaped frames are arranged on the two opposite sides of the rubber coating wheel correspondingly, multiple sets of grooving conical cutters are installed on the lower sides of the C-shaped frames, a mounting transverse plate is installed at the tops of the C-shaped frames, position adjusting assemblies for driving the C-shaped frames to transversely move are symmetrically installed on the mounting transverse plate, and an electric telescopic rod is installed on the upper side of the middle of the mounting transverse plate and used for adjusting the heights of the C-shaped frames. Compared with the prior art, the grooving device has the advantages that the multiple sets of grooving conical cutters are installed on the lower side wall of the C-shaped frame in a staggered mode, the position adjusting assembly drives the lower side wall of the C-shaped frame to transversely move, and the grooving conical cutters can be moved to the inner side of a groove; the C-shaped frame can be driven to move downwards through the electric telescopic rod, the grooving conical cutter is supported on the side face of the groove, and grooving is conducted on the side face of the groove.

This invention discloses a broadband detector in the mid-infrared band, comprising, from bottom to top, a silicon wafer, a reflective layer, and a dielectric layer. U-shaped superconducting nanowires are disposed on the surface of the dielectric layer, with the open ends of the U-shaped superconducting nanowires connected to gold electrode one and gold electrode two, respectively. Gold antennas are symmetrically disposed on both sides of the U-shaped superconducting nanowires. Gold electrode one is connected to a constant voltage source, and gold electrode two is grounded. This invention also discloses a method for fabricating the broadband detector in the mid-infrared band. The superconducting nanowire single-photon detector based on gold antenna enhancement of this invention features high field gain, large photosensitive area, high nanowire absorption efficiency, high intrinsic quantum efficiency, and extremely low fill factor, enabling efficient application in mid-infrared band detection. Compared with traditional optical cavity superconducting single-photon detectors, it has advantages such as high fabrication feasibility, high compatibility with planar processes, and field gain, and can detect mid-infrared light signals across a wider band.

The utility model discloses a silicon material cutting plane processing technology device which comprises a supporting platform and a recycling and filtering device, the recycling and filtering device comprises a first filtering tank, a second filtering tank and a third filtering tank, a second filtering net is fixedly installed in the first filtering tank, and a third filtering net is fixedly installed in the third filtering tank. A first filter screen is fixedly mounted on one side of the top end of the first filter tank, the second filter tank is fixedly connected to one side of the first filter tank, and an activated carbon filter plate is movably inserted into the inner side of the second filter tank. By means of the multi-stage filtering system, cutting fluid can be efficiently recycled, waste of the cutting fluid is reduced, the use cost is reduced, impurities and chippings in the cutting fluid can be effectively removed through the two layers of filtering nets and the activated carbon filtering plate, the cleanliness of the cutting fluid is kept, and waste liquid discharge is reduced by recycling the cutting fluid.

The invention belongs to the technical field of machining, and particularly relates to a machining method for a composite angle plane part, which comprises the following steps of: decomposing the composite angle plane of the part into two coplanar single-angle planes by using three-dimensional modeling software, and measuring an included angle alpha 1 and an included angle alpha 2 between an intersection line and a reference plane; adding materials to form a containing body containing part, and setting a positioning and clamping surface; by taking the containing body as a reference, processing an alpha 1 plane, a process step and a middle structure by using horizontal three-axis semi-equipment, and fixing by using industrial paraffin; and processing a reference surface by using vertical three-axis equipment and stripping the part by taking the process step as a reference, and heating to remove paraffin. Only three-axis / three-axis half equipment is needed, the standard is unified, the precision efficiency is improved, the cost is reduced, the universality is high, and the method can be popularized to similar parts.

According to the multi-band acousto-optic modulator and the preparation method thereof, due to the inherent characteristics of multiple acoustic modes and high acoustic quality factors of a lithium tantalate material, a plurality of discrete acoustic resonance bands are excited at the same time through the arranged interdigital electrodes, so that multi-band parallel modulation of optical signals is realized on a single device, and the multi-band acousto-optic modulator has a wide application prospect. The technical defect that an existing acousto-optic modulator is single in working frequency band is overcome, the overall bandwidth capacity of the modulator is greatly improved, the modulator can directly meet the requirements of wavelength division multiplexing, frequency division multiplexing and other advanced systems for the multi-frequency-band, large-capacity and parallel signal processing capacity, and compared with the mode that a plurality of discrete modulator arrays are adopted, the multi-frequency-band, large-capacity and parallel signal processing capacity is achieved. The multi-band modulation function is integrated on a single device, the overall size of the system is remarkably reduced, the overall reliability and stability of the system are improved, the preparation method is compatible with a standard semiconductor plane process, the process compatibility and the manufacturing yield are improved, and therefore the large-scale production cost is reduced.

The invention belongs to the technical field of nuclear industry equipment detection, and particularly relates to a centering detection method for assembling equipment of a hexagonal nuclear fuel assembly of a pressurized water reactor. A laser tracker is used for measuring the flatness of the rod beam V-shaped support plane; measuring the perpendicularity of a plane formed by the side surface of the process grillwork and the rod bundle V-shaped bracket by using a laser tracker; establishing a space coordinate system A by taking a plane formed by the rod cluster V-shaped bracket and the side surface of the process grillwork as references; measuring the positions of the lowermost lattice cell hole and the uppermost lattice cell hole of the process grillwork and the guide plate by using a laser tracker, comparing the positions with the positions of the corresponding lattice cell holes in the design values in the space coordinate system A, and calculating the deviation of the process grillwork and the guide plate; a laser tracker is used for measuring direction deviation and position deviation between the motion trail of the push rod and the central axis of the space coordinate system A; the method is suitable for quantitatively detecting and evaluating the spatial poses of the motion trails of the rod bundle bracket, the process grillwork and the push rod in the assembly process of the hexagonal nuclear fuel assembly of the pressurized water reactor.