Bistable electromagnetic micro-mechanical relay

A micro-mechanical and bistable technology, applied in the direction of non-polar relays, etc., can solve the problems of inability to maintain the on (or off) state, large energy consumption and high cost of monostable relays

Inactive Publication Date: 2005-04-06
CHONGQING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The monostable relay not only consumes a lot of energy, but also cannot maintain its on (or off) state once the power is turned off
Shanghai Jiaotong University has applied for a patent "bistable electromagnetic micro-driver and its preparation method". This patent is based on planar coils and uses LIGA technology to make movable electrodes. Due to the limitation of the thickness of the sacrificial layer, the movable electrodes The height of the gap with the contact electrode will not exceed 10 μm, so its off-circuit resistance and breakdown voltage are greatly limited (the electrode gap of existing micro relays is as high as 400 μm or more)
In addition, the five-layer metal structure of the driver needs to be fabricated on a silicon substrate using a planar process, which is very technically difficult and expensive

Method used

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  • Bistable electromagnetic micro-mechanical relay
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  • Bistable electromagnetic micro-mechanical relay

Examples

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Embodiment Construction

[0014] The structure of the bistable electromagnetic micromechanical relay is as follows figure 1 As shown, it consists of a movable electrode system, a planar coil and a contact electrode system, a permalloy core and a permanent magnet.

[0015] The structure of the movable electrode system is as image 3 As shown, it consists of a movable electrode 2, a twisted beam 1, a contact 13 and a frame 4. The movable electrode 2 is supported on the frame 4 by the twisted beam 1 on both sides of the middle part. The corresponding contact 13, the movable electrode 2, the twist beam 1 and the contact 13 have the same thickness, the thickness of the frame 4 is slightly thicker than the movable electrode 2, and the thickness difference will constitute the gap between the movable electrode 2 and the planar coil 3. the gap between. The whole movable electrode system is composed of silicon material coated with a layer of permalloy, which is bonded to the silicon substrate 7 for making pla...

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Abstract

It is a bistable electromagnetic micro machinery relay, which combines the separate process of moving electrode system, plane coil, contact electrode system and magnetic core. The moving electrode system comprises moving electrode, wring beam, contact and frame; the plane coil and contact electrode system are made on the silicon underlay; the moving electrode system is fixed through the frame on the silicon underlay of plane coil and contact electrode; the constant magnetic metal sticks tightly to the surface of the permalloy magnetic core. This relay uses electromagnetic metal to change the magnetic direction of the moving electrode and to turn in the stable on or off status.

Description

technical field [0001] The invention relates to a relay based on microelectromechanical system (MEMS) technology driven by electromagnetic force, in particular to a bistable electromagnetic micromechanical relay. technical background [0002] As a basic electromechanical component, miniature relays are widely used in power management, instrumentation, automatic control and communication systems. Conventional relays are divided into two categories: electromechanical relays (ElectromechanicalRelays) and solid-state relays (Solid-State Relays). Electromechanical relays are based on the pull-in and break-out of metal electrodes. This kind of relay has almost perfect electrical performance, that is, small closed resistance (less than 1 ohm), large conduction current, large open circuit resistance, and small leakage current, but due to mechanical contact, its response speed is slow and its working life is short. . Solid state relays are based on the coupling of phototransistors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01H51/01
Inventor 张流强温志渝
Owner CHONGQING UNIV
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