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Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof

A random laser, mgxzn1-xo technology, applied in the direction of lasers, laser parts, laser parts, etc., to achieve the effect of simple structure and implementation

Inactive Publication Date: 2009-08-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To date, there are no reports on the electropumping of Mg x Zn 1-x A Report of O Thin Film Random Laser

Method used

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  • Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof
  • Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Take the following process steps:

[0024] 1) Clean n-type , resistivity 0.005 ohm cm, size 15×15mm 2 , a silicon wafer with a thickness of 675 microns, after cleaning, put it into the reaction chamber of the DC reactive magnetron sputtering device, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa; Deposit Mg with a thickness of about 300 nm on a silicon wafer by DC reactive magnetron sputtering x Zn 1-x O(x=0.2) film, when sputtering, use Mg 0.2 Zn 0.8 Alloy target, substrate temperature 300°C, sputtering power 80W, pass through O 2 Mixed gas with Ar, O 2 The flow ratio to Ar is 1:2, and the working pressure is 10Pa;

[0025] 2) Using alumina powder as the evaporation source, the Mgx Zn 1-x An aluminum oxide film with a thickness of about 100 nm is deposited on the O (x=0.2) film;

[0026] 3) Sputter 20nm and 100nm thick Au films on the aluminum oxide film and the back of the silicon substrate respectively, wherein the area of ​​the former ...

Embodiment 2

[0029] Take the following process steps:

[0030] 1) Clean N-type , with a resistivity of 0.5 ohm cm and a size of 15×15mm 2 , a silicon wafer with a thickness of 675 microns; according to the chemical formula Mg 0.25 Zn 0.75 , zinc acetate (Zn(Ac) 2 2H 2 O) and magnesium acetate (Mg(Ac) 2 4H 2 O) be dissolved in ethylene glycol methyl ether solution, and add ethanolamine as stabilizer, stir to obtain Mg 0.25 Zn 0.75 O precursor solution (the sum of the concentrations of Zn and Mg in the solution is 1.2M, and the molar ratio Zn:Mg=3:1), and then use the sol-gel method to spin-coat the silicon wafer with a thickness of about 400nm. Mg x Zn 1-x O(x=0.25) film, dried at 100°C for 20 minutes after spin-coating, and then heat-treated at 800°C for 2 hours under oxygen;

[0031] 2) Using silicon nitride ceramics as the target material, Mg x Zn 1-x Deposit a silicon nitride film with a thickness of about 100nm on the O(x=0.25) film. During sputtering, the substrate tempera...

Embodiment 3

[0036] Take the following process steps:

[0037] 1) Clean N-type , the resistivity is 50 ohm cm, and the size is 15×15mm 2 , a silicon wafer with a thickness of 675 microns; according to the chemical formula Mg 0.35 Zn 0.65 , zinc acetate (Zn(Ac) 2 2H 2 O) and magnesium acetate (Mg(Ac) 2 4H 2 O) be dissolved in ethylene glycol methyl ether solution, and add ethanolamine as stabilizer, stir to obtain Mg 0.35 Zn 0.65 O precursor solution (the sum of the concentrations of Zn and Mg in the solution is 1.2M, and the molar ratio Zn:Mg=13:7), and then use the sol-gel method to spin-coat the silicon wafer with a thickness of about 400nm. Mg x Zn 1-x O(x=0.35) film, after spin-coating, dry at 100°C for 20 minutes, then heat-treat at 800°C for 2 hours under oxygen;

[0038] 2) Using quartz powder as the evaporation source, the Mg x Zn 1-x A silicon oxide film with a thickness of about 100 nm is deposited on the O(x=0.35) film;

[0039] 3) Sputter deposit a 30nm thick Au fi...

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Abstract

The invention discloses an electric pumping silica-based MgxZn1-xO film ultraviolet random laser and a manufacturing method thereof. The random laser has a structure as follows: the MgxZn1-xO (x is more than 0 and less than or equal to 0.35) film, a dielectric film and an electrode are deposited on the front face of a silica substrate from bottom to top in sequence and an ohmic contact electrode is deposited on the back face of the silica substrate, wherein the dielectric is silicon oxide, aluminum oxide or silicon nitride. The silica-based random laser does not need a traditional laser cavity resonator and has simple preparation technique. In addition, equipment used is compatible with the prior mature planar technology of silica devices. Therefore, the silica-based random laser has potential application in respect of phoelectron integration and the like.

Description

technical field [0001] The present invention relates to electrically pumped Si-based Mg x Zn 1-x O thin film ultraviolet random laser and its preparation method. Background technique [0002] In 1999, H.Cao et al. used ZnO powder to obtain room-temperature optically pumped ultraviolet random lasers, which triggered a research boom in random lasers (references: H.Cao, Y.G.Zhao, S.T.Ho, E.W.Seelig, Q.H.Wang, and R.P. H. Chang, Phys. Rev. Lett. 82, 2278 (1999)). Since this random laser does not require a conventional resonator, the size of the laser can be reduced to the order of microns, so it has potential applications in many fields. Mg x Zn 1-x O alloy materials were first proposed by A.Ohtomo et al. in 1998 (references: A.Ohtomo, M.Kawasaki, T.Koida, K.Masubuchi, H.Koinuma, Y.Sakurai, Y.Yoshida, T.Yasuda and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998)). Studies have shown that in ensuring Mg x Zn 1-x When the O alloy does not separate phases and maintains the hex...

Claims

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Application Information

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IPC IPC(8): H01S3/14H01S3/16H01S3/09H01S3/02H01S3/038C23C28/00C23C14/35C23C14/08C23C20/08C23C14/24C23C14/06C23C14/18
Inventor 马向阳陈培良田野杨德仁
Owner ZHEJIANG UNIV
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