Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof

A random laser, mgxzn1-xo technology, applied in the direction of lasers, laser parts, laser parts, etc., to achieve the effect of simple structure and implementation

Inactive Publication Date: 2009-08-19
ZHEJIANG UNIV
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To date, there are no reports on the electropumping

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof
  • Electric pumping silicon base MgxZn1-xO film ultraviolet accidental laser and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0022] Example 1

[0023] Take the following process steps:

[0024] 1) Clean n-type , resistivity is 0.005 ohm cm, size is 15×15mm 2 , The silicon wafer with a thickness of 675 microns is placed in the reaction chamber of the DC reactive magnetron sputtering device after cleaning, and the vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa; Mg with a thickness of about 300 nm was deposited on silicon wafers by DC reactive magnetron sputtering x Zn 1-x O(x=0.2) thin film, when sputtering, using Mg 0.2 Zn 0.8 Alloy target, substrate temperature 300℃, sputtering power 80W, pass O 2 and Ar mixed gas, O 2 The flow ratio with Ar is 1:2, and the working pressure is 10Pa;

[0025] 2) Using alumina powder as the evaporation source, using electron beam evaporation method in Mgx Zn 1-x An aluminum oxide film with a thickness of about 100 nm is deposited on the O(x=0.2) film;

[0026] 3) Au films with a thickness of 20 nm and 100 nm were sputtered on the aluminum oxide...

Example Embodiment

[0028] Example 2

[0029] Take the following process steps:

[0030] 1) Clean N-type , resistivity is 0.5 ohm cm, size is 15×15mm 2 , a silicon wafer with a thickness of 675 microns; according to the chemical formula Mg 0.25 Zn 0.75 , zinc acetate (Zn(Ac) 2 ·2H 2 O) and magnesium acetate (Mg(Ac) 2 ·4H 2 O) be dissolved in ethylene glycol methyl ether solution, and add ethanolamine as stabilizer, stir to obtain Mg 0.25 Zn 0.75 O precursor solution (the sum of the concentration of Zn and Mg in the solution is 1.2M, the molar ratio of Zn:Mg=3:1), and then the sol-gel method was used to spin several times on the silicon wafer to deposit the thickness of about 400nm. Mg x Zn 1-x O(x=0.25) thin film, dried at 100°C for 20 minutes after spin coating, and then heat-treated at 800°C under oxygen for 2 hours;

[0031] 2) Using silicon nitride ceramics as the target material, using radio frequency magnetron sputtering method in Mg x Zn 1-x A silicon nitride film with a thick...

Example Embodiment

[0035] Example 3

[0036] Take the following process steps:

[0037] 1) Clean N-type , resistivity is 50 ohm cm, size is 15×15mm 2 , a silicon wafer with a thickness of 675 microns; according to the chemical formula Mg 0.35 Zn 0.65 , zinc acetate (Zn(Ac) 2 ·2H 2 O) and magnesium acetate (Mg(Ac) 2 ·4H 2 O) be dissolved in ethylene glycol methyl ether solution, and add ethanolamine as stabilizer, stir to obtain Mg 0.35 Zn 0.65 O precursor solution (the sum of the concentration of Zn and Mg in the solution is 1.2M, the molar ratio of Zn:Mg=13:7), and then the sol-gel method was used to spin several times on the silicon wafer to deposit the thickness of about 400nm. Mg x Zn 1-x O(x=0.35) thin film, dried at 100°C for 20 minutes after spin coating, and then heat-treated at 800°C under oxygen for 2 hours;

[0038] 2) Using quartz powder as the evaporation source, using electron beam evaporation method in Mg x Zn 1-x A silicon oxide film with a thickness of about 100 nm ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an electric pumping silica-based MgxZn1-xO film ultraviolet random laser and a manufacturing method thereof. The random laser has a structure as follows: the MgxZn1-xO (x is more than 0 and less than or equal to 0.35) film, a dielectric film and an electrode are deposited on the front face of a silica substrate from bottom to top in sequence and an ohmic contact electrode is deposited on the back face of the silica substrate, wherein the dielectric is silicon oxide, aluminum oxide or silicon nitride. The silica-based random laser does not need a traditional laser cavity resonator and has simple preparation technique. In addition, equipment used is compatible with the prior mature planar technology of silica devices. Therefore, the silica-based random laser has potential application in respect of phoelectron integration and the like.

Description

technical field [0001] The present invention relates to electrically pumped Si-based Mg x Zn 1-x O thin film ultraviolet random laser and its preparation method. Background technique [0002] In 1999, H.Cao et al. used ZnO powder to obtain room-temperature optically pumped ultraviolet random lasers, which triggered a research boom in random lasers (references: H.Cao, Y.G.Zhao, S.T.Ho, E.W.Seelig, Q.H.Wang, and R.P. H. Chang, Phys. Rev. Lett. 82, 2278 (1999)). Since this random laser does not require a conventional resonator, the size of the laser can be reduced to the order of microns, so it has potential applications in many fields. Mg x Zn 1-x O alloy materials were first proposed by A.Ohtomo et al. in 1998 (references: A.Ohtomo, M.Kawasaki, T.Koida, K.Masubuchi, H.Koinuma, Y.Sakurai, Y.Yoshida, T.Yasuda and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998)). Studies have shown that in ensuring Mg x Zn 1-x When the O alloy does not separate phases and maintains the hex...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S3/14H01S3/16H01S3/09H01S3/02H01S3/038C23C28/00C23C14/35C23C14/08C23C20/08C23C14/24C23C14/06C23C14/18
Inventor 马向阳陈培良田野杨德仁
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap