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Electronic circuit device having silicon substrate

a technology of electronic circuit device and silicon substrate, which is applied in the direction of fluid speed measurement, instrumentation, and the details of the semiconductor/solid-state device, can solve the problems of large mounting area and volume, and achieve the effect of reducing size and weigh

Inactive Publication Date: 2005-10-20
ISHIDA MAKOTO +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0016] The electronic circuit device according to the present invention, in which the passive element is combined with the silicon substrate, has effects of realizing reduction in size and in weight.

Problems solved by technology

The conventional electronic circuit device combining passive elements with a silicon substrate consequently has a problem of a mounting area and a volume becoming large.

Method used

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  • Electronic circuit device having silicon substrate
  • Electronic circuit device having silicon substrate
  • Electronic circuit device having silicon substrate

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embodiment 1

[0038] Hereinafter, description will be made of embodiments of the present invention with reference to the accompanying drawings. FIG. 1 is a sectional view of an electronic circuit device having a silicon substrate according to Embodiment 1 of the present invention.

[0039] A silicon substrate 1 has a front surface and a back surface. The upper side of FIG. 1 corresponds to the front surface, and the lower side thereof corresponds to the back surface. On the front surface of the silicon substrate 1, elements, which are not shown in the figure, such as a transistor, a resistor, and a capacitor are formed by using a silicon planar process, which is a technology of directly forming an integrated circuit on a semiconductor substrate adopting methods of deposition, etching, doping, heat treatment, and the like.

[0040] Further, a recess is formed on the front surface of the silicon substrate 1 by anisotropic silicon dry etching such as DRIE (Deep Reactive Ion Etching) or anisotropic wet e...

embodiment 2

[0047]FIG. 4 is a sectional view of an electronic circuit device having a silicon substrate according to Embodiment 2 of the present invention. The silicon substrate 1 has a front surface and a back surface. The upper side of FIG. 4 corresponds to the front surface, and the lower side thereof corresponds to the back surface. The elements such as a transistor, resistor, and capacitor are formed on the front surface of the silicon substrate 1 by using the silicon planar process.

[0048] A method of forming the recess of the silicon substrate 1 is the same as in the case of FIG. 1. A point different from the embodiment in FIG. 1 is that the passive element 2 has a protruded portion which takes a part of a terminal as an electrode. The protruded portion is inserted into the recess of the silicon substrate 1. The metal interconnect, interconnect by diffusion at high concentration, or polysilicon interconnect 13 for electrical conduction is formed in advance on the front surface of the rec...

embodiment 3

[0050]FIG. 5 is a sectional view of an electronic circuit device having a silicon substrate according to Embodiment 3 of the present invention. The silicon substrate 1 has a front surface and a back surface. The upper side of FIG. 5 corresponds to the front surface, and the lower side thereof corresponds to the back surface. The elements such as a transistor, resistor, and capacitor are formed on the front surface of the silicon substrate 1 by using the silicon planar process.

[0051] A point of difference from the embodiment in FIG. 3 is that the recess of the silicon substrate has two levels. The shape of the recess thus eases the insertion of the passive element 2 from the front surface of the silicon substrate.

[0052] Further, as the shape of the recess, a tapered shape can also be made by conducting taper etching through anisotropic wet etching and then conducting DRIE vertically, as shown in FIG. 6. This structure further eases the insertion of the passive element 2 from the fr...

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PUM

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Abstract

An electronic circuit device having a silicon substrate is provided comprising: a silicon substrate having a semiconductor element and a recess; and at least one passive element which is formed by a process different from a silicon planar process by which the semiconductor element is formed. In the electronic circuit device, the passive element is entrenched in the recess of the silicon substrate, and the semiconductor element formed on the silicon substrate is electrically connected to the passive element.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to an electronic circuit device in which a passive element or a sensor element is combined with a silicon substrate. [0003] 2. Description of the Related Art [0004]FIG. 19 shows a structure of a conventional electronic circuit device in which a passive element is combined with a silicon substrate (for example, refer to JP 09-8180A (FIG. 1)). [0005] A group of active components 100 made on a silicon substrate and a group of passive components 101 are mounted on a surface of an insulating substrate 102. A circuit pattern (not shown in the figure) is printed on a front surface of the insulating substrate 102, and the circuit pattern electrically connects the active components (diode, transistor, IC, or the like) 100 to the passive components (resistor, capacitor, inductor, or the like) 101. [0006] The conventional electronic circuit device combining passive elements with a silicon substrat...

Claims

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Application Information

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IPC IPC(8): H01L25/00B81B7/00G01P15/00H01L21/335H01L23/29H01L23/52H01L25/04H01L25/065H01L25/07H01L25/16H01L25/18H01L29/06H01L29/84
CPCH01L25/16H01L29/0657H01L2224/16H01L2924/19104H01L2924/1461H01L2924/3011H01L2924/00E03F5/0401E03F5/06E03F2005/065E03F2005/066
Inventor ISHIDA, MAKOTOSAWADA, KAZUAKITAKAO, HIDEKUNISUDO, MINORU
Owner ISHIDA MAKOTO
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