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Method and device for detecting ferro-electric film microwave dielectric property

A ferroelectric thin film and microwave dielectric technology, which is applied in measuring devices, testing dielectric strength, and measuring electricity, can solve problems such as insufficient resolution accuracy, achieve simple structure and principle, facilitate miniaturization, and facilitate device manufacturing and assembly Effect

Active Publication Date: 2006-03-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the calculation of dielectric constant and dielectric loss by delay and attenuation has insufficient resolution accuracy.

Method used

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  • Method and device for detecting ferro-electric film microwave dielectric property
  • Method and device for detecting ferro-electric film microwave dielectric property
  • Method and device for detecting ferro-electric film microwave dielectric property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Utilize a square magnesium oxide substrate 2 with strontium barium titanate film 1 deposited on its surface, and plate a gold film with a thickness of more than 2.5 μm by magnetron sputtering, and the gold film forms a coplanar waveguide 3 and a coplanar open line 4, whose shape is as Figure 2a As shown, the coplanar waveguide 3 includes a main transmission line 31 and two ground planes 32 respectively located on both sides of the main transmission line. The cross-sectional view of the coplanar waveguide 3 is shown in figure 1 As shown, there is a slot 33 of equal width between the two ground planes 32 and the main transmission line 31. The 1 / 4 wavelength coplanar open line 4 is a straight line, and the coplanar open line 4 includes the transmission line 41 and the two sides of the transmission line respectively. The ground plane 43 separated by two gaps 42, the end of the transmission line 41 is an open end; the main transmission line 31 on the coplanar waveguide 3 is...

Embodiment 2

[0033] Lanthanum aluminate (LaAlO) with a barium titanate film deposited on a square surface 3 ) substrate, plated a gold film with a thickness of more than 2.5 μm by magnetron sputtering, the gold film forms a coplanar waveguide 5 and a 1 / 4 wavelength coplanar open line 6, and its shape is as follows Figure 2b As shown, the main transmission line 51 on the coplanar waveguide 5 is connected to the transmission line 61 on the 1 / 4 wavelength coplanar open line 6, the end of the transmission line 61 is an open end, and the 1 / 4 wavelength coplanar open line 6 is a broken line, The width of the slot 62 on it is not greater than 10 μm, and the width of the slot 52 on both sides of the main transmission line 51 on the coplanar waveguide 5 is 200 μm. The thickness of the barium titanate film is 0.3 μm. When the external voltage is applied to the barium titanate film through the device port, the electric field intensity at the gap 62 on the 1 / 4 wavelength coplanar open line is higher ...

Embodiment 3

[0036] Utilize a square aluminum oxide substrate deposited with barium strontium titanate film on the surface, and use magnetron sputtering to plate a copper film with a thickness of more than 2.5 μm. The copper film forms a coplanar waveguide with 7 and 1 / 4 wavelength coplanar Open line 8, the 1 / 4 wavelength coplanar open line 8 is a multiple folded line, its shape is as Figure 2c As shown, the main transmission line 71 on the coplanar waveguide 7 is connected to the transmission line 81 on the 1 / 4 wavelength coplanar open line 8, the end of the transmission line 81 is an open end, and the thickness of the barium strontium titanate film is 0.3 μm, 1 / The width of the slot 82 on the 4-wavelength coplanar open line 8 is not greater than 5 μm, and the width of the slot 72 on both sides of the main transmission line 71 of the coplanar waveguide 7 is 200 μm. When the external voltage is applied to the barium strontium titanate film through the device port, the electric field inte...

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Abstract

The present invention is method and device for detecting the microwave dielectric characteristic of ferroelectric film. The device includes substrate, measured ferroelectric film on the substrate, coplanar waveguide line including main transmission line and earthing areas separated on two sides on the film, and coplanar quarter-wave open-circuited line on the film and including transmission line connected to the main transmission line and earthing areas separated on two sides. Owing to the coplanar quarter-wave open-circuited line to form the resonant peak, the dielectric characteristic of the measured film may be obtained easily. The pattern for detection of the ferroelectric film may be formed in once forming process. Therefore, compared with available technology, the present invention has simple principle and easy device making and assembling, and is convenient and practical.

Description

technical field [0001] The invention belongs to the field of microwave engineering, and in particular relates to a method and a device for detecting microwave dielectric properties of ferroelectric thin films. Background technique [0002] Since the 1960s, ferroelectric materials have been studied and applied to microwave devices, including electrically modulated varactors, electrically tuned resonators, phase shifters, filters, power dividers, and oscillators. These devices are used in communication and radar systems have a wide range of applications. Compared with ferromagnetic modulation devices and PIN diode modulation devices, ferroelectric modulation devices have the advantages of fast modulation speed, small size and light weight. In addition, they use an applied electric field to change their dielectric constant, so the power loss is also low. [0003] So far, the most widely studied ferroelectric material in the field of microwave applications is barium strontium ...

Claims

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Application Information

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IPC IPC(8): G01R31/00G01R31/12
Inventor 孟庆端张雪强李翡孙亮黄建冬张强李春光黎红何豫生何艾生
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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