Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of large-area non-laminated structure NiSe nano-film

A non-layered structure, nano-thin film technology, applied in the direction of nanotechnology, coating, metal material coating technology, etc., can solve the problem of high cost, achieve the effect of good quality, small number of grain boundaries, and simple preparation process

Inactive Publication Date: 2018-12-28
宁波菲利特水处理科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Nanofilms of large-area non-layered materials can be epitaxially grown on single crystal substrates by molecular beam epitaxy, but the cost is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The following description serves to disclose the present invention to enable those skilled in the art to carry out the present invention. The preferred embodiments described below are only examples, and those skilled in the art can devise other obvious variations.

[0014] The present invention will be further described below in conjunction with the examples, but the protection scope of the present invention is not limited only to the examples.

[0015] A method for preparing a large-area non-layered structure NiSe nano film, comprising the following steps:

[0016] (1) Preparation of NiSe nano-film: Ni foil with a thickness of 50 μm and a purity of 99.99% was annealed at 500 °C for 30 min in a low-pressure atmosphere with 10 sccm H2 and 20 sccm Ar to remove the oxides on the surface of the Ni foil ; After annealing, use electron beam evaporation method to deposit ZnSe thin film on the surface of Ni foil. During the whole deposition process, the vacuum degree is kept a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a large-area non-laminated structure NiSe nano-film. The method comprises the steps of preparation of a NiSe nano-film, transfer of the NiSe nano-film,and construction of a NiSe nano-film optical detector. The non-laminated structure NiSe nano-film obtained by growth through a solid-phase reaction method is good in quality, large in grain size and small in grain boundary number; according to an photoelectric detector prepared based on the high-quality NiSe nano-film, obtained photoelectric current is improved by four orders of magnitudes compared with a NiSe nanocrystalline film; and the preparation process is simple, the cost is low, good practical value is achieved, and the method can be used for preparing other non-laminated structure material nano-films compatible to traditional plane processes.

Description

technical field [0001] The invention belongs to the field of semiconductor film materials, and relates to a method for preparing a large-area non-layer structure NiSe nano film by a solid phase reaction method. Background technique [0002] Graphene and other 2D materials, including hexagonal boron nitride and transition metal sulfides, have attracted extensive attention due to their unique structures and properties. In particular, high-quality, large-area two-dimensional films can be prepared on specific substrates by methods such as chemical vapor deposition, which significantly accelerates the application and development of two-dimensional materials. Inspired by layered two-dimensional materials, it can be predicted that nanofilms of non-layered materials are compatible with traditional planar processes, and are more conducive to their applications than other dimensions. Moreover, compared with films composed of nanocrystals, the prepared non-layered nanofilms with large...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/06C23C14/58B82Y40/00
CPCC23C14/30B82Y40/00C23C14/0005C23C14/0629C23C14/5806
Inventor 吕青锋金钟镐
Owner 宁波菲利特水处理科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com