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Polysilicon film for film transistor and display device with the polysilicon film

A technology of polysilicon thin films and display devices, applied in transistors, electric solid state devices, semiconductor devices, etc., can solve problems such as lack of accuracy of the number of main grain boundaries, insufficient embedded circuits, etc.

Inactive Publication Date: 2007-04-11
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this method is not sufficient for an embedded circuit requiring TFT characteristics equivalent to those of single crystal silicon, and also does not have the same accuracy as capable of controlling the number of main grain boundaries included in the working channel region.
Therefore, there are still inconsistencies in TFT

Method used

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  • Polysilicon film for film transistor and display device with the polysilicon film
  • Polysilicon film for film transistor and display device with the polysilicon film
  • Polysilicon film for film transistor and display device with the polysilicon film

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Embodiment Construction

[0037] Embodiments of the invention will now be set forth in detail, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. Embodiments of the present invention will be described below with reference to the drawings.

[0038] Since the grains have a finite size, grain boundaries are formed between adjacent grains. If the crystal grains of polysilicon exert an important influence directly or indirectly on TFT characteristics when preparing TFTs for active matrix displays, the polysilicon crystal grains can be enlarged and adjusted to improve TFT characteristics.

[0039] The grain boundaries that exist in the working channel region exert a significant influence on the TFT characteristics, especially the "primary" grain boundaries with an inclination angle of -45°≤θ≤45° along the direction perpendicular to the working channel, as shown in Figure 1A and Fig. As shown in 1B, unavoidable defects are includ...

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Abstract

A polycrystalline silicon thin film for a TFT and a display device using the same where the number of crystal grain boundaries exerts a fatal influence on movement of electric charge carrier, providing a distance 'S' between active channels of the TFT having dual or multiple channels with a relation S = mGs.sec [theta]- L, and also providing a display device in which uniformity of TFT characteristics is improved by synchronizing the number of the crystal grain boundaries included in each of the channels of the dual or multiple channels S = mGs.sec [theta]-L, Gs is a size of crystal grains of the polycrystalline silicon thin film, m is an integer of 1 or more, [theta] is an inclined angle where fatal crystal grain boundaries, that is, 'primary' crystal grain boundaries are inclined in a direction perpendicular to an active channel direction, and L represents a length of active channels for each TFT having dual or multiple channels.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application 2002-3073 filed with the Korean Industrial Property Office on January 18, 2002, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to a polysilicon thin film for a thin film transistor and a display device using the polysilicon thin film, more particularly, the present invention relates to a polysilicon thin film for a thin film transistor, which has crystal grains with a constant and regularized crystal growth direction, and adopts the method of The polysilicon thin film is made of thin film transistor display device. Background technique [0004] It is well known that when polysilicon is used to prepare thin film transistor (TFT) substrates, valence bond defects, such as atomic dangling bonds present on polysilicon grain boundaries contained i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/205G02F1/136G02F1/1368G09F9/30H01L21/20H01L21/336H01L21/77H01L29/04
CPCH01L27/1285H01L29/6675H01L29/04H01L29/78672H01L29/78645H01L27/1296H01L21/2026H01L29/78696H01L21/02686H01L21/02532H01L21/02595H01L29/786
Inventor 李基龙
Owner SAMSUNG DISPLAY CO LTD
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