Method for improving electrical conductivity of graphene thin films prepared by normal-pressure chemical gas-phase sedimentation method

A technology of atmospheric pressure chemical vapor phase and graphene film, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of poor electrical conductivity of graphene film, and achieve the suppression of non-uniform nucleation process , Improve electrical conductivity, simple operation

Inactive Publication Date: 2017-09-29
SOUTH CHINA UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the shortcomings of the poor electrical conductivity of graphene films prepared by the existing normal-pressure chemical vapor deposition method, the present invention provides a low-cost, easy-to-operate graphene film preparation method that does not require additional equipment and raw materials. process to improve the electrical conductivity of graphene

Method used

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  • Method for improving electrical conductivity of graphene thin films prepared by normal-pressure chemical gas-phase sedimentation method
  • Method for improving electrical conductivity of graphene thin films prepared by normal-pressure chemical gas-phase sedimentation method
  • Method for improving electrical conductivity of graphene thin films prepared by normal-pressure chemical gas-phase sedimentation method

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Experimental program
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Effect test

Embodiment 1

[0031] (1) Put 2×2cm copper foil into acetone, ethanol, and deionized water for 10 minutes for ultrasonic cleaning respectively to remove oil and other organic impurities on the surface of the copper foil, then dry it with high-pressure gas and place it in a quartz crucible;

[0032] (2) Put the quartz crucible with copper foil into the constant temperature zone of the tube furnace, then evacuate the quartz tube, feed Ar gas to maintain the normal pressure in the tube; feed 300 sccm argon, 40 sccm hydrogen, and heat from room temperature for 30 minutes to 700°C, and then heat-treat the copper foil substrate at this temperature for 5 hours; while keeping the flow rate of argon and hydrogen constant, raise the temperature to 1000°C for 5 minutes, inject 5 sccm of methane, and grow for 15 minutes;

[0033] (3) After the growth is completed, close the feed of methane and hydrogen, keep the feed of argon continuously, remove the heating furnace body, quickly cool down to room temper...

Embodiment 2

[0036] (1) Put 2×2cm copper foil into acetone, ethanol, and deionized water for 10 minutes for ultrasonic cleaning respectively to remove oil and other organic impurities on the surface of the copper foil, then dry it with high-pressure gas and place it in a quartz crucible;

[0037] (2) Put the quartz crucible with copper foil into the constant temperature zone of the tube furnace, then evacuate the quartz tube, feed Ar gas to maintain the normal pressure in the tube; feed 300 sccm argon, 40 sccm hydrogen, and heat from room temperature for 30 minutes to 700°C, and then heat-treat the copper foil substrate at this temperature for 1 hour, 3 hours, and 7 hours; while keeping the flow rate of argon and hydrogen constant, raise the temperature to 1000°C in 5 minutes, and inject 5 sccm of methane to carry out 15min growth;

[0038] (3) After the growth is completed, turn off the introduction of methane and hydrogen, keep the continuous introduction of argon, remove the heating fur...

Embodiment 3

[0041] (1) Put 2×2cm copper foil into acetone, ethanol, and deionized water for 10 minutes for ultrasonic cleaning respectively to remove oil and other organic impurities on the surface of the copper foil, then dry it with high-pressure gas and place it in a quartz crucible;

[0042] (2) Put the quartz crucible with copper foil into the constant temperature zone of the tube furnace, then evacuate the quartz tube, feed Ar gas to maintain the normal pressure in the tube; feed 300 sccm argon, 40 sccm hydrogen, and heat from room temperature through 40 min to 1000°C, 900°C, and 800°C, and then heat-treat the copper foil substrate at this temperature for 5 hours; while keeping the flow rate of argon and hydrogen constant, raise the temperature to 1000°C, and feed 5 sccm of methane to carry out 15min growth;

[0043] (3) After the growth is completed, turn off the introduction of methane and hydrogen, keep the continuous introduction of argon, remove the heating furnace body, quickl...

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Abstract

The invention belongs to the technical field of grapheme material preparation and discloses a method for improving the electrical conductivity of graphene thin films prepared by a normal-pressure chemical gas-phase sedimentation method. The method for improving the electrical conductivity comprises the steps that (1) copper foil is subjected to surface cleaning treatment; (2) the treated copper foil is subjected to high-temperature heat treatment, and the conditions of high-temperature heat treatment are that the flow speed of argon is 200-500 sccm, the flow speed of hydrogen is 0-50 sccm, and constant-temperature treatment is conducted at the temperature of 700-100 DEG C for 5-7 hours; (3) the copper foil subjected to high-temperature treatment is heated till the temperature is 900-1050 DEG C, and methane is led in for growth; and (4) leading-in of the methane and the hydrogen is stopped, leading-in of the argon is kept, cooling is conducted, and then the graphene thin films grown to copper piece substrates are obtained. According to the for improving the electrical conductivity of the graphene thin films prepared by the normal-pressure chemical gas-phase sedimentation method, operating is easy, extra equipment do not need to be additionally arranged, the cost is low, operating is easy, the purposes that sheet resistance of the graphene thin films is greatly reduced, and the electrical conductivity of the graphene thin films is improved can be achieved.

Description

technical field [0001] The invention relates to a method for improving the electrical conductivity of a graphene film, in particular to a method for improving the electrical conductivity of a graphene film prepared by an atmospheric pressure chemical vapor deposition method. The invention utilizes the method of heat-treating the substrate under normal-pressure hydrogen atmosphere so as to improve the electrical conductivity of the graphene film. Background technique [0002] Graphene is a sheet material with a hexagonal honeycomb structure formed by sp2 hybridization and stacking of valence electrons in the 2s\2py\2px orbitals of each carbon atom. It is chemically stable, flexible, conductive, and transparent. , thermal conductivity, and raw material cost considerations, graphene is considered to be the most promising material for transparent conductive films, and has excellent prospects in the field of optoelectronic devices. In addition, for the application of lithium-ion...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/26
CPCC23C16/0209C23C16/26
Inventor 刘庆渊苏东艺彭继华
Owner SOUTH CHINA UNIV OF TECH
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