1results about How to "Reduce nucleation density" patented technology

This invention relates to the field of two-dimensional layered material fabrication technology, specifically to a two-dimensional tin diselenide crystal, its preparation method, and its applications. The invention provides a method for preparing a two-dimensional tin diselenide crystal. Inside a single-temperature zone tube furnace, a selenium source, a tin source, and a blank substrate are placed sequentially according to the gas flow direction. The axial direction of the gas inlet flange is adjusted to form an inclination angle of 1-7° relative to the horizontal direction of the inner tube of the single-temperature zone tube furnace. Under specific reaction conditions, a two-dimensional tin diselenide crystal is deposited on the blank substrate. This method can prepare two-dimensional tin diselenide crystals with a lateral dimension greater than or equal to 400 μm, a thickness less than or equal to 10 nm, and no obvious stacking. The obtained crystals are expected to meet the fabrication requirements of high-performance, large-area devices. This fabrication process has good versatility and high reproducibility, providing a new reference approach for the controllable growth of other layered two-dimensional materials.