2results about How to "Reduce nucleation density" patented technology

This invention relates to the field of two-dimensional layered material fabrication technology, specifically to a two-dimensional tin diselenide crystal, its preparation method, and its applications. The invention provides a method for preparing a two-dimensional tin diselenide crystal. Inside a single-temperature zone tube furnace, a selenium source, a tin source, and a blank substrate are placed sequentially according to the gas flow direction. The axial direction of the gas inlet flange is adjusted to form an inclination angle of 1-7° relative to the horizontal direction of the inner tube of the single-temperature zone tube furnace. Under specific reaction conditions, a two-dimensional tin diselenide crystal is deposited on the blank substrate. This method can prepare two-dimensional tin diselenide crystals with a lateral dimension greater than or equal to 400 μm, a thickness less than or equal to 10 nm, and no obvious stacking. The obtained crystals are expected to meet the fabrication requirements of high-performance, large-area devices. This fabrication process has good versatility and high reproducibility, providing a new reference approach for the controllable growth of other layered two-dimensional materials.

The present invention belongs to the technical field of organic semiconductors, and specifically relates to a method for preparing a large-area single-layer single-crystal domain organic semiconductor single crystal. The method comprises: 1) preparing an organic semiconductor solution a and an organic semiconductor solution b respectively; 2) taking a substrate and performing a solvent-philic treatment and a solvent-phobic treatment respectively to obtain a solvent-philic substrate and a solvent-phobic substrate; 3) heating the solvent-philic substrate, and simultaneously heating the organic semiconductor solution a and the organic semiconductor solution b or a mixed solution of the two, treating the stacked solvent-philic substrate and the solvent-phobic substrate with the organic semiconductor solution a and the organic semiconductor solution b or a mixed solution of the two, and obtaining an organic semiconductor single crystal after solidification. The present invention uses two organic semiconductor mixed solutions with double-sided substituted alkyl chains, which reduces the nucleation density, inhibits the tendency of multilayer growth of crystals, and realizes the growth of large-area single-layer single crystal domains.