The invention relates to the related technical field of gallium nitride production and preparation methods, and discloses a method for realizing one-time or multi-time hole burying of an insertion layer in HPVE growth, which comprises the following steps: (1) preparing one of the following substrates or composite substrates, comprising (I) Al2O3, SCAM, Si and SiC substrates, (II) preparing an Al2O3 substrate, an SCAM substrate, an Si substrate and an SiC substrate which are provided with Spring AlN, and (III) an Al2O3 substrate, an SCAM substrate, an Si substrate and an SiC substrate which areprovided with MOCVD GaN thin films; and placing the substrate or the composite substrate into an HVPE device for processing. The method for realizing the one-time or multi-time hole burying of the insertion layer in the HPVE growth comprises the following steps: firstly, forming a low-density and low-coverage gallium nitride crystal nucleus at a low temperature, and heating and annealing to forma high-quality small crystal; and then carrying out two-dimensional growth to form a gap layer in the interface and for absorbing stress during growth; in such a way, one or more layers are inserted to provide a template for the growth of self-supporting gallium nitride with high quality, low warpage and automatic interface stripping.