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Assistant device for graphene preparation, graphene and preparation method thereof

An auxiliary device, graphene technology, applied in the field of semiconductors, can solve the problem of graphene growth rate reduction and achieve the effect of reducing the nucleation density

Inactive Publication Date: 2018-11-27
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides an auxiliary device for preparing graphene, graphene and a preparation method thereof, so as to solve the problem in the prior art that reducing the nucleation density of graphene will lead to a decrease in the growth rate of graphene

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  • Assistant device for graphene preparation, graphene and preparation method thereof

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Embodiment 1

[0034] Please refer to figure 1 with figure 2 , figure 1 with figure 2 It is a schematic structural view of the graphene auxiliary device provided by Embodiment 1 of the present invention, the device includes: a support body 11 and a buffer layer 12, the buffer layer 12 is arranged on the upper surface of the support body 11, and the buffer layer 12 is provided with one or more The hole 13 runs through the buffer layer 12 .

[0035] In the embodiment of the present invention, such as image 3 As shown, when preparing graphene by the CVD method, the device is placed on the upper surface of the substrate 20, the carbon source is buffered by the buffer layer 12, and reaches the surface of the substrate 20 through the hole 13, forming nucleation on the surface of the substrate 20 layer, through the buffering effect of the buffer layer, the speed at which the carbon source reaches the surface of the substrate 20 and the supersaturation of the carbon source on the surface of t...

Embodiment 2

[0046] Please refer to Figure 4 , Figure 4 It is a schematic flow diagram of the realization of the preparation method of graphene provided by the second embodiment of the present invention, and the method comprises the following steps:

[0047] Step S101, placing the auxiliary device for preparing graphene as described in Embodiment 1 of the present invention on the upper surface of the substrate, and placing the substrate in the cavity of the chemical vapor deposition equipment, wherein the support of the auxiliary device The body is in contact with the substrate.

[0048] In the embodiment of the present invention, such as image 3 As shown, the above-mentioned auxiliary device for preparing graphene is placed on the upper surface of the substrate 20, and the substrate is placed in the chamber of the CVD equipment.

[0049] Optionally, the substrate is a copper substrate. Before step S101, the method further includes: growing a copper oxide film on the surface of the ...

Embodiment 3

[0059] Embodiment 3 of the present invention provides a kind of preparation method of graphene, and this method comprises the following steps:

[0060] Step 1. Heat the copper substrate to 200° C. in air and maintain it for 20 minutes.

[0061] Step 2, placing the auxiliary device for preparing graphene as in Embodiment 1 of the present invention on the upper surface of the copper substrate, wherein the height of the support in the auxiliary device is 4 mm, and placing the copper substrate on the CVD equipment cavity.

[0062] Step 3. Raise the temperature of the chamber to 1030° C., control the pressure at 25 mbar, and feed argon into the chamber at a flow rate of 500 sccm, maintain it for 10 minutes, and discharge the air in the chamber.

[0063] Step 4. Introduce hydrogen and methane into the cavity, wherein the flow rate of hydrogen gas is 30 sccm, the flow rate of methane is 2 sccm, and the temperature of the cavity is set at 1030°C.

[0064] Step 5. After 60 minutes, s...

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Abstract

The invention is suitable for the technical field of semiconductors and provides an assistant device for graphene preparation, graphene and a preparation method thereof. The preparation method includes: putting the assistant device on the upper surface of a substrate, and putting the substrate in a cavity of chemical vapor deposition equipment, wherein the assistant device comprises a supporting body and a buffering layer arranged on the upper surface of the supporting body and provided with a plurality of holes penetrating the buffering layer, and the supporting body contacts with the substrate; heating the cavity to preset temperature, and discharging air in the cavity; feeding a carbon source into the cavity, and maintaining temperature of the cavity at the preset temperature; stoppingfeeding the carbon source after preset time, feeding protective gas into the cavity, and lowering the temperature of the cavity. Nucleation density of graphene can be lowered without lowering growth speed of the same.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an auxiliary device for preparing graphene, graphene and a preparation method thereof. Background technique [0002] Graphene is a carbon atom with sp 2 The hybrid orbitals form a hexagonal two-dimensional carbon nanomaterial with a honeycomb lattice. Due to the unique two-dimensional structural features and excellent crystallographic quality, the charge carriers in graphene exhibit photon-like behavior. In addition, graphene also has excellent mechanical, electrical, thermal, optical and other properties, and is expected to be widely used in nanoelectronic devices, transparent conductive films, composite materials, catalytic materials, field emission materials, solar cell electrodes, photoelectric converters, etc. . [0003] Chemical vapor deposition (Chemical VaporDeposition, CVD) is a common method for preparing graphene, which has the advantages of simpl...

Claims

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Application Information

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IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 高学栋冯志红蔚翠刘庆彬何泽召周闯杰郭建超
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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