Assistant device for graphene preparation, graphene and preparation method thereof
An auxiliary device, graphene technology, applied in the field of semiconductors, can solve the problem of graphene growth rate reduction and achieve the effect of reducing the nucleation density
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[0033] Example one
[0034] Please refer to figure 1 with figure 2 , figure 1 with figure 2 It is a schematic diagram of the structure of a graphene auxiliary device provided by the first embodiment of the present invention. The device includes a support 11 and a buffer layer 12. The buffer layer 12 is provided on the upper surface of the support 11, and the buffer layer 12 is provided with one or more The hole 13 penetrates the buffer layer 12.
[0035] In the embodiment of the present invention, such as image 3 As shown, when graphene is prepared by the CVD method, the device is placed on the upper surface of the substrate 20, the carbon source is buffered by the buffer layer 12, and reaches the surface of the substrate 20 through the holes 13, forming nuclei on the surface of the substrate 20 Through the buffering effect of the buffer layer, the speed at which the carbon source reaches the surface of the substrate 20 and the supersaturation of the carbon source on the surface...
Example Embodiment
[0045] Example two
[0046] Please refer to Figure 4 , Figure 4 It is a schematic diagram of the realization process of the preparation method of graphene provided in the second embodiment of the present invention, and the method includes the following steps:
[0047] In step S101, the auxiliary device for preparing graphene as described in the first embodiment of the present invention is placed on the upper surface of the substrate, and the substrate is placed in the cavity of the chemical vapor deposition equipment, wherein the auxiliary device supports The body is in contact with the substrate.
[0048] In the embodiment of the present invention, such as image 3 As shown, the above-mentioned auxiliary device for preparing graphene is placed on the upper surface of the substrate 20, and the substrate is placed in the cavity of the CVD equipment.
[0049] Optionally, the substrate is a copper substrate. Before step S101, the method further includes: growing a copper oxide film ...
Example Embodiment
[0058] Example three
[0059] The third embodiment of the present invention provides a method for preparing graphene. The method includes the following steps:
[0060] Step 1. Heat the copper substrate to 200°C in air and maintain it for 20 minutes.
[0061] Step 2. Place the auxiliary device for preparing graphene as in the first embodiment of the present invention on the upper surface of the copper substrate, wherein the height of the support in the auxiliary device is 4 mm, and the copper substrate is placed on the CVD equipment In the cavity.
[0062] Step 3. Raise the temperature of the cavity to 1030° C., control the pressure at 25 mbar, and pass argon into the cavity with a flow rate of 500 sccm and maintain for 10 minutes to exhaust the air in the cavity.
[0063] Step 4. Feed hydrogen and methane into the cavity, where the flow rate of hydrogen is 30 sccm and the flow rate of methane is 2 sccm, and the temperature of the cavity is set at 1030°C.
[0064] Step 5: After 60 minute...
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