The application provides a
silicon carbide crystal growth method and a growth device thereof, and belongs to the technical field of
silicon carbide single crystal growth. The growth method comprises the following steps: providing a
crystal growth device, mounting a
silicon carbide seed crystal on a
seed crystal holder, and cyclically performing a preset number of
redox pretreatments; the
redox pretreatment comprises the following steps: using an oxidizing gas to perform oxidation treatment on a growth surface of the
silicon carbide seed crystal to obtain an oxidation layer, and then using a reducing gas to perform
reduction treatment on the oxidation layer and to desorb; after the cyclic execution, a pit is generated at a
basal plane dislocation emergence of the seed
crystal surface, and a pretreated seed crystal is obtained; an asymmetric structure is adopted to fill
silicon carbide polycrystal materials at the bottom of a
crucible in the
crystal growth device; a physical vapor transport method is used for
crystal growth, so that the growth rate of a
central region of the crystal is greater than that of an
edge region, and a finished product is obtained. The device for the above method is also provided. The problems that the existing BPD cannot be effectively removed, the existing process cost is high, and the yield is low are solved.