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Method for preparing copper substrate based on dry method cleaning process

A technology for dry cleaning and copper substrates, applied in chemical instruments and methods, metal material coating technology, gaseous chemical plating, etc., can solve the problems of complex copper substrate processing technology and high cost, and achieve high repeatability, Reduced nucleation density and strong controllability

Active Publication Date: 2017-06-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing a copper substrate based on a dry cleaning process, which is used to solve the problem of complex copper substrate processing and high cost in the prior art

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  • Method for preparing copper substrate based on dry method cleaning process
  • Method for preparing copper substrate based on dry method cleaning process
  • Method for preparing copper substrate based on dry method cleaning process

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Embodiment Construction

[0028] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0029] see Figure 1 to Figure 5 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, so that only the components related to the present invention are shown in the diagrams rather than the number, shape and Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the...

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Abstract

The invention provides a method for preparing a copper substrate based on a dry method cleaning process. The method comprises the following steps: a step 1), the copper substrate for preparing graphene is provided; a step 2), the copper substrate is placed in an aerobic environment for treatment, so that the surface of the copper substrate is oxidized in order to form an oxidation layer; and a step 3), the oxidation layer on the surface of the copper substrate is removed in order to obtain a clean copper substrate surface. By means of oxidation of the copper substrate for growth of graphene, the surface layer of the substrate is oxidized and shed from the substrate, the clean copper surface for preparing graphene with a proper high quality is obtained, the copper substrate can obviously reduce nucleation density and reduce defects in graphene. The method has the advantages of good repeatability, simple and easy operation, and good controllability; and the method is suitable for batch treatment of industrial applications.

Description

technical field [0001] The invention belongs to the field of graphene preparation, in particular to a method for preparing a CVD graphene copper substrate based on a dry cleaning process. Background technique [0002] Graphene has extraordinary electrical conductivity, strength dozens of times stronger than steel, and excellent light transmission. Its appearance is expected to trigger a revolution in the field of modern electronic technology. In graphene, electrons can move extremely efficiently, while traditional semiconductors and conductors, such as silicon and copper, do not perform as well as graphene. Due to the collision of electrons and atoms, traditional semiconductors and conductors release some energy in the form of heat. General computer chips waste 72%-81% of electrical energy in this way. Graphene is different, its electronic energy will not It is depleted, which makes it have unusually good characteristics. [0003] In recent years, graphene has attracted gr...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/26C30B25/18C30B29/02
CPCC23C16/02C23C16/26C30B25/186C30B29/02
Inventor 张燕辉于广辉葛晓明张浩然陈志蓥隋妍萍邓荣轩
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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