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Crucible equipment and method for preparing aluminum nitride crystal

A technology of aluminum nitride and aluminum nitride source, which is applied in the field of crucible equipment for preparing aluminum nitride crystals, can solve problems such as the difficulty in preparing large-sized aluminum nitride single crystals, and achieve controlled nucleation and diameter expansion growth , expand the size, reduce the effect of nucleation density

Active Publication Date: 2019-01-01
SHENZHEN UNIV
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  • Abstract
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Problems solved by technology

[0004] The main purpose of the present invention is to provide a crucible equipment and method for preparing aluminum nitride crystals, aiming to solve the technical problem that it is difficult to prepare large-sized aluminum nitride single crystals in the prior art

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  • Crucible equipment and method for preparing aluminum nitride crystal
  • Crucible equipment and method for preparing aluminum nitride crystal
  • Crucible equipment and method for preparing aluminum nitride crystal

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Embodiment Construction

[0030] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0031] see figure 1 , figure 1 It is a cross-sectional schematic diagram of the crucible equipment for preparing aluminum nitride crystals in the embodiment of the present invention. In the embodiment of the present invention, the above-mentioned crucible equipment includes a first crucible 10, a second crucible 20 and a connecting pipe 50, ...

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Abstract

The invention discloses crucible equipment and method for preparing an aluminum nitride crystal. The crucible equipment comprises a first crucible, a second crucible and a connection pipe, wherein theinner part of the first crucible and the inner part of the second crucible are communicated through the connection pipe; the first crucible is used for containing an aluminum nitride source and the second crucible is used for containing a gallium source; the extending length of the connection pipe in the first crucible is greater than the thickness of the aluminum nitride source in the first crucible. Compared with the prior art, gallium steam generated by the gallium source in the second crucible can enter a reaction cavity of the first crucible; the gallium steam can be used for changing the crystallization property of the aluminum nitride crystal, and the nucleation and diameter-expanding growth of the aluminum nitride crystal are easy to control, so that the gallium steam is mixed into the reaction cavity of the first crucible in a process of preparing the aluminum nitride crystal, the nucleation density of the aluminum nitride crystal can be effectively reduced and the size of the aluminum nitride crystal also can be enlarged, and furthermore, a large-size aluminum nitride single crystal is obtained.

Description

technical field [0001] The invention relates to the field of crystal preparation, in particular to a crucible device and method for preparing aluminum nitride crystals. Background technique [0002] Deep ultraviolet light-emitting devices have broad application prospects in sterilization and disinfection, water purification, biomedicine, deep ultraviolet light sources, etc., and aluminum nitride crystals are ideal semiconductor materials for preparing deep ultraviolet light-emitting devices. At the same time, due to the high temperature and high pressure resistance, high piezoelectric effect and high electron mobility of aluminum nitride crystals, its application in the preparation of high-power electronic devices has also received high expectations and widespread attention. . However, the preparation of aluminum nitride crystal materials is very difficult. At present, the research on aluminum nitride crystals at home and abroad still stays at the centimeter-level preparati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B23/00
CPCC30B23/00C30B29/403
Inventor 武红磊覃佐燕郑瑞生
Owner SHENZHEN UNIV
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