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P-type phosphorus-doped two-dimensional tungsten selenide semiconductor material and preparation method thereof

A tungsten diselenide and phosphorus doping technology, which is applied in the direction of binary selenium/tellurium compounds, metal selenide/telluride, etc., can solve the problems of small crystal domain size and low quality, reduce evaporation temperature and improve product quality. quality, growth-promoting effect

Inactive Publication Date: 2019-04-19
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a p-type phosphorus-doped two-dimensional tungsten diselenide semiconductor material and its preparation method, to solve the problem of p-type phosphorus-doped two-dimensional WSe prepared by the existing process. 2 The crystal domain size is small, and there are multiple points leading to the problem of low quality

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  • P-type phosphorus-doped two-dimensional tungsten selenide semiconductor material and preparation method thereof

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Embodiment 1

[0031] The preparation method of the p-type phosphorus-doped two-dimensional tungsten diselenide semiconductor material of this embodiment includes the following steps:

[0032] (1) 100 parts of Se element, P 2 O 5 30 copies and WO 3 30 parts of the mixture of NaCl and NaCl are respectively placed on the silicon wafer, and then put into the first temperature zone, the second temperature zone and the third temperature zone of the reaction furnace, and in the third temperature zone according to figure 1 Insert the growth substrate as shown, and the substrate is loaded with P 2 O 5 The distance between the silicon wafers is 5cm. Among them, WO 3 The mass ratio to NaCl is 5:1, and the substrate is stacked from bottom to top in the order of silicon wafer, copper foil and soda lime glass.

[0033] (2) Pass in 100sccm of argon gas, heat up the above three temperature zones to 100°C at a rate of 35°C / min, and hold for 10 minutes to remove the H that may be adsorbed in the CVD system 2 O; ...

Embodiment 2

[0036] The preparation method of the p-type phosphorus-doped two-dimensional tungsten diselenide semiconductor material of this embodiment includes the following steps:

[0037] (1) 50 parts of Se element, P 2 O 5 20 copies and WO 3 30 parts of the mixture of NaCl and NaCl are respectively placed on the silicon wafer, and then put into the first temperature zone, the second temperature zone and the third temperature zone of the reaction furnace, and in the third temperature zone according to figure 1 Insert the growth substrate as shown, and the substrate is loaded with P 2 O 5 The distance between the silicon wafers is 10cm. Among them, WO 3 The mass ratio to NaCl is 5:1, and the substrate is stacked from bottom to top in the order of silicon wafer, copper foil and soda lime glass.

[0038] (2) Pass in 100sccm of argon gas, heat up the above three temperature zones to 100°C at a rate of 35°C / min, and hold for 10 minutes to remove the H that may be adsorbed in the CVD system 2 O; T...

Embodiment 3

[0041] The preparation method of the p-type phosphorus-doped two-dimensional tungsten diselenide semiconductor material of this embodiment includes the following steps:

[0042] (1) 100 parts of Se element, P 2 O 5 10 copies and WO 3 30 parts of the mixture of NaCl and NaCl are respectively placed on the silicon wafer, and then put into the first temperature zone, the second temperature zone and the third temperature zone of the reaction furnace, and in the third temperature zone according to figure 1 Insert the growth substrate as shown, and the substrate is loaded with P 2 O 5 The distance between the silicon wafers is 20cm. Among them, WO 3 The mass ratio to NaCl is 5:1, and the substrate is stacked from bottom to top in the order of silicon wafer, copper foil and soda lime glass.

[0043] (2) Pass in 100sccm of argon gas, heat up the above three temperature zones to 100°C at a rate of 35°C / min, and hold for 10 minutes to remove the H that may be adsorbed in the CVD system 2 O;...

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Abstract

The invention discloses a p-type phosphorus-doped two-dimensional tungsten selenide semiconductor material and a preparation method thereof, and belongs to the technical field of semiconductor material preparation. The preparation method uses Se as a selenium source, a mixture of WO3 and NaCl as a tungsten source and P2O5 as a phosphorus doping source, and prepares the p-type phosphorus-doped two-dimensional tungsten selenide semiconductor material on a glass substrate by using a preparation mode of three temperature regions, wherein the Se, P2O5 and mixture of WO3 and NaCl are respectively placed in the first temperature region, second temperature region and third temperature region, and the substrate is placed in the third temperature region.

Description

Technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a p-type phosphorus-doped two-dimensional tungsten diselenide semiconductor material and a preparation method thereof. Background technique [0002] Among many two-dimensional materials, transition metal chalcogenides (TMDCs) have become one of the hot spots in the research field of new materials due to their unique electronic band structure. In the research of semiconductor two-dimensional TMDCs materials, most of them show n-type transport characteristics (such as MoS 2 , WS 2 , MoSe 2 Etc.), therefore weak p-type WSe 2 The preparation of materials is of great significance to the research of two-dimensional TMDCs electronic devices. It is worth noting that the intrinsically prepared two-dimensional WSe 2 For the weak p-type transport characteristics, the construction of different electrode materials makes the device exhibit weak p-type or bipolar character...

Claims

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Application Information

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IPC IPC(8): C01B19/04
CPCC01B19/007
Inventor 李萍剑雷明东徐克赛青芳竹张万里李雪松
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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