Large single crystal graphene and preparation method thereof

A technology of single crystal graphene and polymethyl methacrylate, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the adverse effects of electrical properties, small single crystal domain size, oxidation group Doping and other issues, to achieve the effect of simple and effective preparation method, lower nucleation density, and high single crystal quality

Active Publication Date: 2015-06-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

(Currently used in industry) Graphene produced by the redox method usually has a domain area of ​​tens of microns, and the graphene prepared by this method has many defects due to the chemical reduction reaction process, and it is difficult to completely reduce the oxidized groups. This leads to serious doping, which seriously limits its application in the field of electronics.
The chemical vapor deposition method is suitable for large-scale preparation of graphene film materials, but the single crystal domain size of the graphene film prepared by the traditional chemical vapor deposition method is relatively small, usually at the micron level, and a large number of grain boundary pairs in the graphene film its electrical properties adversely affect

Method used

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  • Large single crystal graphene and preparation method thereof
  • Large single crystal graphene and preparation method thereof
  • Large single crystal graphene and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0050] Example 1. Preparation of large single crystal graphene

[0051] (1) Use 5% dilute hydrochloric acid and deionized water to clean the copper foil (manufactured by Alfa Aesar, purity 99.8%, thickness 25μm), and place the copper foil in a sleeve with a magnetic control device. Place the sleeve in a tube furnace, under a hydrogen atmosphere with a flow rate of 100sccm, and a system pressure of 100Pa, raise the temperature of the furnace body to 1020°C and keep it for 30min;

[0052] (2) Keep the temperature of the furnace body at 1020°C, turn off the hydrogen gas flow, and pass in argon gas with a flow rate of 100sccm. At the same time, 2g of melamine solids (Bailingwei company, purity 99.8%) are heated on the heating belt, and the heating belt is set at 120°C. , The system pressure is 100Pa, and the treatment time is 10min to complete the treatment of the copper foil surface;

[0053] (3) Keep the temperature of the furnace body at 1020°C, turn off the argon gas, pass in hydrog...

Embodiment 2

[0060] Example 2. Preparation of large single crystal graphene

[0061] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as electrolyte, copper foil (produced by Alfa Aesar, purity 99.8%, thickness 25μm) is connected to the positive electrode, and polished for 30 minutes at a DC current of 0.5A. Put the copper foil in a sleeve with a magnetic control device, and then put the sleeve in a tube furnace. Under a hydrogen atmosphere with a flow of 300sccm, the furnace temperature is increased to 1020℃, and the system pressure is 300Pa. 50min;

[0062] (2) Keep the furnace temperature at 1020°C, turn off the hydrogen gas flow, and pass in argon gas with a flow rate of 500sccm. At the same time, 2g of melamine solids (Bailingwei company, purity 99.8%) are heated on the heating belt, and the heating belt is set at 120°C. , The system pressure is 500Pa, and the treatment time is 10min to complete the treatment of the copper foil surface;

[0063] (3) Keep the ...

Embodiment 3

[0069] Example 3: Preparation of large single crystal graphene

[0070] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as electrolyte, copper foil (produced by Alfa Aesar, purity 99.8%, thickness 25μm) is connected to the positive electrode, and polished for 30 minutes at a DC current of 0.5A. Put the copper foil in a sleeve with a magnetic control device, and then put the sleeve in a tube furnace. Under a hydrogen atmosphere with a flow of 100sccm, the furnace temperature is increased to 1020℃, and the system pressure is 100Pa. 30min;

[0071] (2) Keep the furnace temperature at 1020°C, turn off the hydrogen gas flow, and pass in argon gas with a flow rate of 500sccm. At the same time, 2g of melamine solids (Bailingwei company, purity 99.8%) are heated on the heating belt, and the heating belt is set at 120°C. , The system pressure is 500Pa, and the treatment time is 10min to complete the treatment of the copper foil surface;

[0072] (3) Keep the ...

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Abstract

The invention relates to a large single crystal graphene and preparation method thereof. The preparation method comprises the following steps: 1) annealing a copper base under reducing atmosphere to obtain annealed copper base; 2) under triazine derivative steam atmosphere, treating the copper base annealed after the annealing treatment in the step 1) to obtain the copper base after the triazine derivative treatment, wherein the triazine derivative is selected from at least one of tripolycyanamide, 2,4-diamino-6-methyl-1,3,5-triazine, and 2-amino-4-methyl-6-methoxy-1,3,5-triazine; 3) depositing graphene on the surface of the copper base subjected to triazine derivative biological treatment by adopting a chemical vapor deposition method to obtain the large single crystal graphene. The preparation method is simple and suitable for large-scale production, the single crystal domain size achieves sub-centimeter level, and the single crystal quality is high and can be applied to the electronics.

Description

Technical field [0001] The invention belongs to the field of graphene preparation, and specifically relates to a large single crystal graphene and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional thin film material formed by a single layer of carbon atoms arranged in a hexagonal honeycomb structure. Due to the excellent properties of graphene in electricity, optics, heat, and mechanics, since its discovery, it has attracted widespread attention in various fields such as physics, chemistry, biology, and materials. The single-layer carbon atoms in graphene are arranged in a hexagonal lattice, resulting in a Dirac-shaped band structure, and the energy and momentum at the Fermi level have a linear dispersion relationship. This energy band structure determines that graphene has extremely high electron and hole mobility, which is more than two orders of magnitude higher than traditional silicon materials, so graphene has gradually become a stro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/00
CPCC30B25/00C30B29/02
Inventor 刘忠范林立彭海琳任华英
Owner PEKING UNIV
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