Preparation method of large-size single-crystal graphene

A single crystal graphene, large size technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem that large size single crystal graphene has no application value, reduce graphene nucleation density, growth problems such as low speed, to achieve the effect of low cost, large size and fast growth rate

Inactive Publication Date: 2016-10-05
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the means to inhibit the nucleation of graphene mainly include reducing the concentration of methane, increasing the hydrogen / methane ratio, substrate annealing or electropolishing, adding trace oxygen, etc. At present, the nucleation density of graphene can be reduced to about 5-10 / cm 2 , single crystal graphene up to millimeter size can be obtained, however, it is very difficult to further reduce the nucleation density of graphene
Another important issue that needs to be paid attention to in inhibiting the nucleation and growth of large-size single-crystal graphene is a reasonable growth rate. The growth rate is too low when the nucleation density is reduced, and the technology that cannot obtain large-size single-crystal graphene in a reasonable time no application value

Method used

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  • Preparation method of large-size single-crystal graphene
  • Preparation method of large-size single-crystal graphene
  • Preparation method of large-size single-crystal graphene

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Experimental program
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Embodiment 1

[0024] Such as figure 1 As shown, the present invention uses a horizontal reactor to grow graphene, and the two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4 . First, polycrystalline copper foil (thickness 125 μm, length×width=80mm×40mm) was ultrasonically cleaned in acetone, water and ethanol for 5 minutes respectively, and then ultrasonically cleaned in acetone, water and ethanol for 5 minutes respectively, and then Continue to put them into acetone, water, and ethanol in turn for ultrasonic cleaning for 5 minutes. After the cleaning is completed, the polycrystalline copper foil with a purity of 99.8% is made into a copper foil cavity (length × width × height = 35mm × 35mm × 3mm) (such as figure 2 ). The manufacturing method of the copper cavity structure is as follows: Fold the sides of the copper foil vertically up to 1.5mm high, and open a gap in the middle of the two longer vertical sides, and then fold the copper foil ...

Embodiment 2

[0027] Such as figure 1As shown, the present invention uses a horizontal reactor to grow graphene, and the two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4 . First, polycrystalline copper foil (thickness 125 μm, length×width=80mm×40mm) was ultrasonically cleaned in acetone, water and ethanol for 5 minutes respectively, and then ultrasonically cleaned in acetone, water and ethanol for 5 minutes respectively, and then Continue to put them into acetone, water, and ethanol in turn for ultrasonic cleaning for 5 minutes. After the cleaning is completed, the polycrystalline copper foil with a purity of 99.8% is made into a copper cavity structure (length × width × height = 35mm × 35mm × 3mm) (such as figure 2 ). The manufacturing method of the copper cavity structure is as follows: Fold the sides of the copper foil vertically up to 1.5mm high, and open a gap in the middle of the two longer vertical sides, and then fold the copper f...

Embodiment 3

[0030] Such as figure 1 As shown, the present invention uses a horizontal reactor to grow graphene, and the two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4 . First, put the copper foil (thickness 125 μm, length×width=150mm×70mm) into acetone, water and ethanol for 5 minutes for ultrasonic cleaning respectively, then put them into acetone, water and ethanol for 5 minutes respectively, and then continue to Put them into acetone, water, and ethanol for ultrasonic cleaning respectively for 5 minutes. After cleaning, the polycrystalline copper foil with a purity of 99.8% was made into a cavity structure (length×width×height=60mm×60mm×5mm). The manufacturing method of the copper foil cavity structure is as follows: Fold up the vertical sides of 1.5mm high around the copper foil vertically, and open a gap in the middle of the longer two vertical sides, and then fold the copper foil on both sides of the gap The vertical sides are co...

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Abstract

The present invention relates to a graphene material and its chemical vapor deposition (CVD) preparation technology, specifically a method for preparing large-size single crystal graphene. The method adopts chemical vapor deposition technology and uses copper foil with a certain oxygen content as a growth substrate. And the copper foil is made into a cavity structure. Under the protection of non-reactive gas, the copper cavity structure is first heat-treated, and hydrocarbons are used as the carbon source, and the carbon source gas is used to catalyze cracking at high temperature to grow large-scale monolayers. crystalline graphene. The invention has the advantages of simple technological process, easy operation, low cost, high product quality, large and uniform size, good repeatability and the like.

Description

technical field [0001] The invention relates to a graphene material and its chemical vapor deposition (CVD) preparation technology, in particular to a method for preparing large-size single crystal graphene. Background technique [0002] Following carbon nanotubes, the appearance of graphene, a planar single atomic layer material, has once again brought great hope to the fields of nanoscience research and nanoelectronics technology. This kind of planar monoatomic layer substance, which was previously considered impossible to exist stably, was not only prepared in the laboratory, but also showed attractive properties. Graphene is a two-dimensional material that is really close to ideal. It has a free path of electron transport at room temperature as long as 400 nm, very good chemical stability, and a series of excellent properties: extremely high intrinsic carrier mobility: 2×10 5 cm 2 ·V -1 ·s -1 , SiO 2 Mobility on / Si substrate: 10 4 cm 2 ·V -1 ·s -1 , the resi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/02C30B25/00
Inventor 陈学康郭磊白晓航王兰喜曹生珠
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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