Method for preparing molybdenum sulfide two-dimensional material by adopting MOCVD equipment

A two-dimensional material, molybdenum sulfide technology, applied in the direction of molybdenum sulfide, metal material coating process, gaseous chemical plating, etc., can solve the problem of difficult to control the growth direction of crystal nuclei, and achieve a controllable single-layer film thickness Effect

CN110655111AActive Publication Date: 2020-01-07ZHEJIANG UNIV
0 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2020-01-07

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] The invention relates to the technical field of two-dimensional molybdenum sulfide materials, and in particular to a method for preparing two-dimensional molybdenum sulfide materials by using MOCVD equipment. Background technique

[0002] Single-layer transition metal chalcogenides have received extensive attention in recent years because of their excellent properties in basic physics such as mechanics, heat, optics, and electricity. Among them, single-layer molybdenum disulfide is the most typical transition metal chalcogenide. Because of its wide sources and good relative stability, it has been more studied by people. At present, people have developed a variety of methods for preparing molybdenum disulfide, and the MOCVD method is recognized as the best method for preparing large-size uniform two-dimensional materials. At the same time, I want to grow a large-scale, high-quality MoS with a controllable thickness 2 The lattice matching of the material and...

Examples

Embodiment 1

[0046] A method for preparing MoS using MOCVD equipment 2 The method of (molybdenum sulfide) two-dimensional material includes the following steps:

[0047] (1) Sapphire substrate 3 uses α-Al 2 O 3 Sapphire substrate (ZMKJ 2INCH A-axis), without any pretreatment, such as figure 1 Shown

[0048] (2) The Sapphire substrate is transferred to the quartz table 4 in the MOCVD chamber 2, the initial pressure in the chamber is controlled at 90 Torr, and N is always passed through the gas source inlet 1 in the chamber. 2 20slm;

[0049] (3) The reaction is carried out by chemical vapor deposition: slowly increase the chamber to a growth temperature of 1000°C in 10 minutes, and keep it at a constant temperature for 5 minutes; first pass in 0.1slm H 2 S gas source for 10 minutes to passivate the surface of Sapphire substrate; then pass in 5×10 -5 slm Mo(CO) 6 Air source while maintaining 0.1slm H 2 S gas source is introduced, MoS is performed at a pressure of 90 Torr and a growth temperature of...