Method for preparing molybdenum sulfide two-dimensional material by adopting MOCVD equipment

Abstract

The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.

Description

Technical field [0001] The invention relates to the technical field of two-dimensional molybdenum sulfide materials, and in particular to a method for preparing two-dimensional molybdenum sulfide materials by using MOCVD equipment. Background technique [0002] Single-layer transition metal chalcogenides have received extensive attention in recent years because of their excellent properties in basic physics such as mechanics, heat, optics, and electricity. Among them, single-layer molybdenum disulfide is the most typical transition metal chalcogenide. Because of its wide sources and good relative stability, it has been more studied by people. At present, people have developed a variety of methods for preparing molybdenum disulfide, and the MOCVD method is recognized as the best method for preparing large-size uniform two-dimensional materials. At the same time, I want to grow a large-scale, high-quality MoS with a controllable thickness 2 The lattice matching of the material and...

AI Technical Summary

Problems solved by technology

MoS 2 Material growth generally adopts a one-step method, that is, from the very beginning of MoS 2 The nucleation and film stitching are all completed under the same conditions. The disadvantage of this method is the nucleation density, the growth direction of the crystal nuclei is difficult to control, and it is difficult to achieve a uniform single-layer MoS 2 film

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