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AlN crystal material preparation method based on size and shape control

A technology of crystal material and size, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve the problems of high nucleation density and poor quality aluminum nitride crystals, etc., to avoid polycrystalline and prevent nucleation. The effect of high density and increased volume

Active Publication Date: 2022-08-05
山西中科潞安半导体技术研究院有限公司
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Problems solved by technology

When growing at high temperature, although a higher crystal growth rate can be obtained, the nucleation density is higher, and it is easy to grow poor-quality aluminum nitride crystals

Method used

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  • AlN crystal material preparation method based on size and shape control
  • AlN crystal material preparation method based on size and shape control
  • AlN crystal material preparation method based on size and shape control

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Embodiment Construction

[0027] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0028] In the description of the embodiments of the present disclosure, it should be noted that, unless otherwise expressly specified and limited, the term "connected" should be understood in a broad sense, for example, it may be a fixed connection, a detachable connection, or an integral connection It can be a mechanical...

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Abstract

The invention belongs to the field of semiconductors, and particularly relates to an AlN crystal material preparation method based on size and shape control, according to the method, AlN powder is used for preparing AlN crystals in an AlN crystal material preparation system, the preparation system comprises an outer crucible and an inner crucible arranged in the outer crucible, and the inner crucible comprises an inner crucible body and an outer crucible body arranged in the inner crucible body. The shell is provided with an internal space and extends in the vertical direction; the upper cover is located at the upper end of the shell, and the upper cover comprises a first surface extending in the horizontal direction; the lower cover is located at the lower end of the shell and used for bearing aluminum nitride powder, and the lower cover comprises a second surface extending in the horizontal direction; the column is arranged in the inner space of the inner crucible; a plurality of columns are arranged, and the plurality of columns are arranged at preset intervals; each column is provided with a third surface extending in the horizontal direction; the aluminum nitride seed crystal with the particle size larger than 20 mm is obtained on the third surface of the column through multiple times of growth through the charging step, the heating step, the growth step and the cooling step.

Description

technical field [0001] The present disclosure belongs to the field of semiconductors, and in particular relates to a method for preparing AlN crystal materials based on size and shape control. Background technique [0002] Aluminum nitride material has a wide band gap (6.2ev), high breakdown field strength (1.17×107V / cm), high electron mobility [1100cm 2 / (V•S)], high thermal conductivity and other excellent properties, it has broad application prospects in deep ultraviolet optoelectronic devices, microwave power devices and electronic devices. Currently, physical vapor transport (PVT) is an effective method to prepare high-quality aluminum nitride single crystal materials. However, the quality of AlN seeds grown on existing heterogeneous substrates (such as SiC, etc.) is poor, and spontaneous nucleation is the most effective method to prepare high-quality AlN crystals. [0003] At present, in the process of spontaneous nucleation growth of aluminum nitride crystals by PVT...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B23/00
CPCC30B29/403C30B23/00
Inventor 王充刘博常煜鹏张童李晋闽
Owner 山西中科潞安半导体技术研究院有限公司
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