Pretreatment method of graphene growth substrate

Abstract

The invention discloses a pretreatment method of a graphene growth substrate. The method comprises the following steps of by using a copper foil or a copper-nickel alloy foil as a substrate, preliminarily polishing the substrate, annealing the substrate in a tube furnace, taking the annealed substrate out of the furnace, polishing the substrate again, and heating and oxidizing the substrate on a heating table to complete the pretreatment, wherein the pretreated substrate can be used for chemical vapor deposition growth of graphene. According to the pretreatment method, the roughness of the copper or copper-nickel alloy substrate can be reduced, the purity of the substrate is improved, active sites on the surface of the substrate are reduced, finally the effect of reducing the nucleation density of graphene is achieved, so that preparation of large single crystal graphene and large-area few-layer graphene with uniform thickness within the range of 2-5 layers is realized.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, and in particular relates to a pretreatment method for a graphene growth substrate. Background technique [0002] Due to its unique optical, electrical, and mechanical properties, graphene, a two-dimensional material, plays a huge role in applications such as electronic devices, optoelectronic devices, energy storage devices, and chemical and biological sensors. [0003] Chemical vapor deposition technology has been widely used in the preparation of graphene due to its advantages of easy control of film composition, good repeatability, and convenient operation and maintenance. However, graphene films prepared by chemical vapor deposition often exhibit high-density grain boundaries. Polycrystalline film, its excellent physical properties are reduced to a certain extent on the grain boundary. Therefore, it is very important to reduce the nucleation density of graphene growth and obtain...

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Problems solved by technology

[0003] Chemical vapor deposition technology has been widely used in the preparation of graphene due to its advantages of easy control of film composition, good repeatability, and convenient operation and maintenance. However, graphene films prepared by chemical vapor deposition often exhibit high-density grain boundaries. Polycrystalline film, its excellent physical properties are reduced to a certain extent on the grain boundary. Therefore, it is very important to reduce the nucleation density of graphene growth and obtain a large single crystal of graphene and a large area of ​​2-5 layers of uniform thickness graphene film. Needed

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