Carrier for controlling graphene crystal nucleus growth

Abstract

The invention discloses a carrier for controlling graphene crystal nucleus growth. The carrier comprises an upper cover, a box and a straight metal substrate for graphene growth, wherein a small hole is formed in the upper cover, and both the upper cover and the box are made of high-temperature-resistant materials such as graphite, quartz, silicon nitride or silicon carbide and the like with melting points higher than 1,000 DEG C; the distance between the metal substrate and the lower surface of the upper cover covering the box is smaller than or equal to 2mm after the metal substrate is placed on a base of the box. A using method of the carrier comprises processes including pretreatment of the metal substrate, annealing of the metal substrate, graphene nucleation, cooling and oxidation. The hole size of the carrier plays a current limiting role for reactant gas at the nucleation stage, and the nucleation area and the nucleation density of graphene on copper foil can be controlled; the nucleation density of graphene is decreased through control on the hole size and various growth parameters, so that preparation of large single-crystalline graphene is realized; the single-crystalline or polycrystalline area of graphene is increased through control on the gas proportion and pressure by a CVD (chemical vapor deposition) tube furnace.

Description

technical field [0001] The invention relates to the field of carriers for controlling the growth of graphene crystal nuclei. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2 / V s, surpassing carbon nanotubes and silicon crystals, while the resisti...

AI Technical Summary

Problems solved by technology

It solves the problem that the crystal nucleus of the graphene film is too small and the density is too large to cause defects caused by the uncontrollable crystal chip in the growth process of the existing method, thereby preparing a high-quality graphene film with a large crystal chip

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