Carrier for controlling graphene crystal nucleus growth

A technology of crystal nucleus growth and graphene, which is applied in the field of vehicles to control the growth of graphene crystal nuclei, and can solve problems such as high density, uncontrollable crystal chips, and small graphene film crystal nuclei

Inactive Publication Date: 2016-04-27
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the problem that the crystal nucleus of the graphene film is too small and the density is too large to cause defects caused by the un

Method used

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  • Carrier for controlling graphene crystal nucleus growth
  • Carrier for controlling graphene crystal nucleus growth
  • Carrier for controlling graphene crystal nucleus growth

Examples

Experimental program
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Effect test

Embodiment 1

[0040] A carrier for controlling the growth of graphene crystal nuclei, such as figure 1 with figure 2 As shown, it is a high temperature resistant graphite carrier, including a loam cake 1, a box and a straight metal substrate 2 for growing graphene, the metal substrate 2 is copper foil, the size of the metal substrate is smaller than the size of the base, and the loam cake There is a small hole 4 on the top, the diameter of the small hole is 0.5mm, the upper cover and the box are made of graphite; the lower surface of the upper cover is straight, the box includes the base 3 and surrounding walls, the upper end of the box is open, the base 3 is a flat bottom wall. The straight metal base used for growing graphene is placed on the base of the box, and the distance between the metal base and the lower surface of the upper cover on the box is 2mm, and the surrounding walls around the box are of equal height. The cover and the upper edge of the surrounding wall around the box a...

Embodiment 2

[0043] A carrier for controlling the growth of graphene crystal nuclei, such as image 3As shown, it is a high-temperature-resistant carrier, including a loam cake 1, a box and a flat metal base 2 for growing graphene. The metal base 2 is copper foil, and the size of the metal base is smaller than the size of the base. There is a small hole 4 with a diameter of 1 mm. Both the upper cover and the box are made of quartz; the lower surface of the upper cover is straight, and the box includes a base 3 and surrounding walls. A flat bottom wall, a flat metal base for growing graphene is placed on the base of the box, and the distance between the metal base and the lower surface of the upper cover on the box is 1.6mm, and the surrounding walls around the box are of equal height, and the upper cover It fits the upper edge of the wall around the box; the base of the carrier is circular, and its size matches the diameter of the quartz tube of the CVD tube furnace. The carrier containing...

Embodiment 3

[0045] A carrier for controlling the growth of graphene crystal nuclei is a high-temperature-resistant carrier, including a loam cake 1, a box and a straight metal substrate 2 for growing graphene, the metal substrate 2 is Ru foil, and the metal substrate The size is smaller than the size of the base. There are 9 small holes 4 on the upper cover. The small holes are an array of 3*3. The diameter of the small holes is 2mm. Both the upper cover and the box are made of silicon nitride; Straight, the box includes a base 3 and surrounding walls, the upper end of the box is open, the base 3 is a flat bottom wall, the straight metal base for growing graphene is placed on the base of the box, and the metal base and cover are placed on the box The distance between the lower surface of the upper cover and the lower surface of the box is 1mm, the surrounding walls around the box are of the same height, and the upper cover and the upper edge of the surrounding walls around the box are atta...

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Abstract

The invention discloses a carrier for controlling graphene crystal nucleus growth. The carrier comprises an upper cover, a box and a straight metal substrate for graphene growth, wherein a small hole is formed in the upper cover, and both the upper cover and the box are made of high-temperature-resistant materials such as graphite, quartz, silicon nitride or silicon carbide and the like with melting points higher than 1,000 DEG C; the distance between the metal substrate and the lower surface of the upper cover covering the box is smaller than or equal to 2mm after the metal substrate is placed on a base of the box. A using method of the carrier comprises processes including pretreatment of the metal substrate, annealing of the metal substrate, graphene nucleation, cooling and oxidation. The hole size of the carrier plays a current limiting role for reactant gas at the nucleation stage, and the nucleation area and the nucleation density of graphene on copper foil can be controlled; the nucleation density of graphene is decreased through control on the hole size and various growth parameters, so that preparation of large single-crystalline graphene is realized; the single-crystalline or polycrystalline area of graphene is increased through control on the gas proportion and pressure by a CVD (chemical vapor deposition) tube furnace.

Description

technical field [0001] The invention relates to the field of carriers for controlling the growth of graphene crystal nuclei. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2 / V s, surpassing carbon nanotubes and silicon crystals, while the resisti...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 高翾李占成姜浩史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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