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Method for preparing silicon carbide-based graphene material with high mobility

A silicon carbide-based, high-mobility technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of affecting mobility and conductivity, low mobility, and difficult control of nucleation density, so as to reduce wrinkle density and crystal quality Good, excellent electrical properties

Active Publication Date: 2019-03-01
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the CVD preparation process, since the nucleation density of graphene is not easy to control, the grain size of the prepared graphene is usually between hundreds of nanometers and hundreds of microns, and graphene is prone to defects during the nucleation and growth process. These greatly affect the mobility and conductivity
For example, Chinese patent application 107500278A discloses a growth method for preparing graphene materials with low wrinkle density. By adjusting the flow rate of the gaseous carbon source during the growth process, the surface wrinkle density of the material can be reduced to 0.1 / μm 2 , but its mobility is still low and can only reach 5000cm 2 / V·s around

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Select the SiC substrate, heat and clean it with concentrated sulfuric acid, aqua regia and hydrofluoric acid solutions, rinse it with deionized water, blow it dry with a nitrogen gun, put it in a dust-proof device, and dry it in an oven. Put the cleaned and dried SiC substrate into the CVD equipment, and evacuate to ≤10 -4 mbar, turn on the microwave power supply, and raise the temperature of the vacuum environment to 1100°C to remove the adsorbed gas on the substrate surface. In the reaction furnace, hydrogen and argon are introduced as carrier gas, propane is introduced as gaseous carbon source, nitrogen and gaseous ethanol are introduced, the flow rate of argon is 3L / min, the flow rate of propane is 0.022L / min, and the flow rate of hydrogen is 10L / min min, the C / H ratio is 0.22%, the nitrogen flow rate is 0.2L / min, the gaseous ethanol flow rate is 0.02L / min, the growth temperature is 1450°C, the growth pressure is 900mbar, and the growth time is 95min. After the gr...

Embodiment 2-3

[0021] Each control condition of embodiment 2-3 is as shown in the table below, and the part not described is all identical with embodiment 1.

[0022] condition

Embodiment 2

[0023] The graphene materials prepared in Example 2 and Example 3 are 3 layers and 1 layer respectively, and the wrinkle density is less than 0.1 pieces / μm 2 , Graphene Raman 2D peak half maximum width ≤ 30cm -1 , graphene mobility ≥6,000cm 2 / V·s, sheet resistance non-uniformity ≤ 5%.

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Abstract

The invention discloses a method for preparing a silicon carbide-based graphene material with high mobility. The method includes growing the graphene material on a silicon carbide base through chemical vapor deposition, using hydrogen and argon as carrier gases, introducing a gaseous carbon source, nitrogen and gaseous ethanol, and growing for 1-100 minutes at 1400-1800 DEG C and 500-1000 mbar pressure to prepare the silicon carbide-based graphene material with high mobility. The graphene material prepared by the method has low surface wrinkle density, high carrier mobility and low sheet resistance nonuniformity.

Description

technical field [0001] The invention relates to the technical field of graphene material preparation, in particular to a method for preparing a high-mobility silicon carbide-based graphene material. Background technique [0002] Mobility is an important parameter reflecting the conductivity of carriers in semiconductors. In semiconductor materials, carriers generated by some reason are in irregular thermal motion. Directional movement forms current, the greater the mobility, the faster the carrier moves, and the higher the conductivity of the semiconductor material. [0003] Graphene is a two-dimensional hexagonal structure composed of carbon atoms, which can be widely used in various fields such as nanoelectronic devices, ultra-high-speed computer chips, high-efficiency energy storage, solid-state gas sensors, field emission materials, and microelectronic integration. There are many methods for preparing graphene, among which chemical vapor deposition (CVD) is an important...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 刘庆彬蔚翠何泽召高学栋郭建超周闯杰冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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