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A method for preparing high-mobility silicon carbide-based graphene material

A silicon carbide-based, high-mobility technology, applied in the direction of graphene, nano-carbon, etc., can solve the problems of difficult control of nucleation density, affect mobility and conductivity, and low mobility, so as to achieve excellent electrical characteristics and reduce wrinkles Good density and crystal quality

Active Publication Date: 2020-10-09
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the CVD preparation process, since the nucleation density of graphene is not easy to control, the grain size of the prepared graphene is usually between hundreds of nanometers and hundreds of microns, and graphene is prone to defects during the nucleation and growth process. These greatly affect the mobility and conductivity
For example, Chinese patent application 107500278A discloses a growth method for preparing graphene materials with low wrinkle density. By adjusting the flow rate of the gaseous carbon source during the growth process, the surface wrinkle density of the material can be reduced to 0.1 / μm 2 , but its mobility is still low and can only reach 5000cm 2 / V·s around

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The SiC substrate is selected, heated and cleaned with concentrated sulfuric acid, aqua regia, and hydrofluoric acid solutions, rinsed with deionized water, dried with a nitrogen gun, placed in a dustproof device, and dried in an oven. Put the cleaned and dried SiC substrate into the CVD equipment and vacuumize to ≤10 -4 mbar, turn on the microwave power, and the vacuum environment is heated to 1100°C to remove the adsorbed gas on the substrate surface. The reactor is fed with hydrogen and argon as the carrier gas, propane as the gaseous carbon source, and nitrogen and gaseous ethanol. The flow of argon is 3L / min, the flow of propane is 0.022L / min, and the flow of hydrogen is 10L / min, C / H ratio is 0.22%, nitrogen flow rate is 0.2L / min, gaseous ethanol flow rate is 0.02L / min, growth temperature is 1450°C, growth pressure is 900mbar, and growth time is 95min. After the growth is over, the microwave power supply is turned off, the hydrogen, gaseous carbon source and nitrog...

Embodiment 2-3

[0021] The control conditions of Example 2-3 are shown in the following table, and the parts not described are the same as those of Example 1.

[0022] condition Example 2 Example 3 Carbon source Methane Ethylene Temperature(℃)14001750 Pressure (mbar)800500 Time (min)505 Argon flow (L / min)1810 Carbon source flow (L / min)0.20.001 Hydrogen flow rate (L / min)202 C / H ratio1％0.05％ Nitrogen flow rate (L / min)0.950.05 Gaseous ethanol flow (L / min) 0.90.002

Embodiment 2

[0023] The graphene materials prepared in Example 2 and Example 3 have 3 layers and 1 layer respectively, and the wrinkle density is less than 0.1 pcs / μm 2 , Graphene Raman 2D peak half-height width ≤ 30cm -1 ,Graphene mobility ≥6,000cm 2 / V·s, the unevenness of sheet resistance ≤5%.

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Abstract

The invention discloses a method for preparing a silicon carbide-based graphene material with high mobility. The method includes growing the graphene material on a silicon carbide base through chemical vapor deposition, using hydrogen and argon as carrier gases, introducing a gaseous carbon source, nitrogen and gaseous ethanol, and growing for 1-100 minutes at 1400-1800 DEG C and 500-1000 mbar pressure to prepare the silicon carbide-based graphene material with high mobility. The graphene material prepared by the method has low surface wrinkle density, high carrier mobility and low sheet resistance nonuniformity.

Description

Technical field [0001] The invention relates to the technical field of graphene material preparation, in particular to a method for preparing a high-mobility silicon carbide-based graphene material. Background technique [0002] Mobility is an important parameter reflecting the conductivity of carriers in semiconductors. In semiconductor materials, carriers generated by some reason are in irregular thermal motion. When a voltage is applied, the carriers are subjected to electric field force. The directional movement forms an electric current. The greater the mobility, the faster the carrier movement and the higher the conductivity of the semiconductor material. [0003] Graphene is a two-dimensional hexagonal structure composed of carbon atoms, which can be widely used in nanoelectronic devices, ultra-high-speed computer chips, high-efficiency energy storage, solid-state gas sensors, field emission materials, and microelectronic integration. There are many methods for preparing gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 刘庆彬蔚翠何泽召高学栋郭建超周闯杰冯志红
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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