A carrier for controlling the growth of graphene crystal nuclei

A technology of crystal nucleus growth and graphene, which is applied in the field of vehicles to control the growth of graphene crystal nuclei, and can solve problems such as high density, small crystal nucleus of graphene film, and uncontrollable crystal chips

Inactive Publication Date: 2017-10-03
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It solves the problem that the crystal nucleus of the graphene film is too small and the density is too large to cause defects caused by the uncontrollable crystal chip in the growth process of the existing method, thereby preparing a high-quality graphene film with a large crystal chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A carrier for controlling the growth of graphene crystal nuclei
  • A carrier for controlling the growth of graphene crystal nuclei
  • A carrier for controlling the growth of graphene crystal nuclei

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A carrier for controlling the growth of graphene crystal nuclei, such as figure 1 with figure 2 As shown, it is a high temperature resistant graphite carrier, including a loam cake 1, a box and a straight metal substrate 2 for growing graphene, the metal substrate 2 is copper foil, the size of the metal substrate is smaller than the size of the base, and the loam cake There is a small hole 4 on the top, the diameter of the small hole is 0.5mm, the upper cover and the box are made of graphite; the lower surface of the upper cover is straight, the box includes the base 3 and surrounding walls, the upper end of the box is open, the base 3 is a flat bottom wall. The straight metal base used for growing graphene is placed on the base of the box, and the distance between the metal base and the lower surface of the upper cover on the box is 2mm, and the surrounding walls around the box are of equal height. The cover and the upper edge of the surrounding wall around the box a...

Embodiment 2

[0043] A carrier for controlling the growth of graphene crystal nuclei, such as image 3As shown, it is a high-temperature-resistant carrier, including a loam cake 1, a box and a flat metal base 2 for growing graphene. The metal base 2 is copper foil, and the size of the metal base is smaller than the size of the base. There is a small hole 4 with a diameter of 1 mm. Both the upper cover and the box are made of quartz; the lower surface of the upper cover is straight, and the box includes a base 3 and surrounding walls. A flat bottom wall, a flat metal base for growing graphene is placed on the base of the box, and the distance between the metal base and the lower surface of the upper cover on the box is 1.6mm, and the surrounding walls around the box are of equal height, and the upper cover It fits the upper edge of the wall around the box; the base of the carrier is circular, and its size matches the diameter of the quartz tube of the CVD tube furnace. The carrier containing...

Embodiment 3

[0045] A carrier for controlling the growth of graphene crystal nuclei is a high-temperature-resistant carrier, including a loam cake 1, a box and a straight metal substrate 2 for growing graphene, the metal substrate 2 is Ru foil, and the metal substrate The size is smaller than the size of the base. There are 9 small holes 4 on the upper cover. The small holes are an array of 3*3. The diameter of the small holes is 2mm. Both the upper cover and the box are made of silicon nitride; Straight, the box includes a base 3 and surrounding walls, the upper end of the box is open, the base 3 is a flat bottom wall, the straight metal base for growing graphene is placed on the base of the box, and the metal base and cover are placed on the box The distance between the lower surface of the upper cover and the lower surface of the box is 1mm, the surrounding walls around the box are of the same height, and the upper cover and the upper edge of the surrounding walls around the box are atta...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
diameteraaaaaaaaaa
electron mobilityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a carrier for controlling the growth of graphene crystal nuclei. The carrier includes an upper cover, a box and a flat metal substrate for growing graphene. There are small holes on the upper cover. Both the upper cover and the box are made of graphite, quartz, silicon nitride or silicon carbide with a melting point greater than 1000 degrees Celsius. Made of high temperature resistant materials; after the metal base is placed on the base of the box, the distance between the metal base and the lower surface of the upper cover on the box is less than or equal to 2mm. The use method of the carrier includes metal substrate pretreatment, metal substrate annealing, graphene nucleation, cooling and oxidation processes. In the present invention, the opening size of the carrier in the nucleation stage plays a role in limiting the flow of the reaction gas, and can control the nucleation area and nucleation density of graphene on the copper foil; control the reduction by opening size and various growth parameters The nucleation density of small graphene is used to realize the preparation of large single crystal graphene; the gas ratio and pressure are controlled by CVD tube furnace to grow the area of ​​graphene single crystal or polycrystalline.

Description

technical field [0001] The invention relates to the field of carriers for controlling the growth of graphene crystal nuclei. Background technique [0002] Graphene is a hexagonal honeycomb structure composed of carbon atoms based on sp2 hybridization, a two-dimensional crystal with a thickness of only one atomic layer. In 2004, Andre Geim, Konstantin Novoselov and others discovered stable single-layer graphene, and also won the 2010 Nobel Prize in Physics for their pioneering work on graphene. In recent years, graphene has shown many exciting properties and potential application prospects in the fields of microelectronics, quantum physics, materials, chemistry, etc., and has attracted extensive attention from the scientific and industrial circles. Graphene has excellent mechanical, thermal, optical, electrical and other properties. The electron mobility of graphene at room temperature exceeds 15000cm2 / V s, surpassing carbon nanotubes and silicon crystals, while the resisti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
Inventor 高翾李占成姜浩史浩飞
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap