Preparation method of monolayer and mono-crystal graphene

A single-crystal graphene, single-layer technology, applied in the field of nanomaterials, can solve the problems of unstable electronic properties of graphene, hindering electron transportation, etc., and achieve the effect of inhibiting a large number of nucleation, reducing nucleation density, and strong controllability

Active Publication Date: 2018-01-30
XINYANG NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The high-density grain boundaries of these polycrystalline graphene films hinder t

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  • Preparation method of monolayer and mono-crystal graphene
  • Preparation method of monolayer and mono-crystal graphene
  • Preparation method of monolayer and mono-crystal graphene

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[0031] Example 1:

[0032] A preparation method of single-layer single-crystal graphene, comprising the following steps:

[0033] Preparation stage: acidizing the polycrystalline copper foil: ultrasonically clean the polycrystalline copper foil with glacial acetic acid, ethanol, and deionized water for 5 minutes, and then dry the polycrystalline copper foil with nitrogen;

[0034] Step a: put the acidified polycrystalline copper foil into a semi-closed quartz test tube, place the polycrystalline copper foil on the mouth of the semi-closed quartz test tube, put the semi-closed quartz test tube into the constant temperature zone of the tube furnace, and put the The weighing bottle with polystyrene is placed in the end of the tube furnace near the air inlet. The weighing bottle is 34.5 cm away from the semi-closed quartz test tube. The tube furnace is evacuated and argon gas is introduced. This step is repeated three times to remove the tube. The air in the furnace is filled wit...

Example Embodiment

[0039] Example 2:

[0040] A preparation method of single-layer single-crystal graphene, comprising the following steps:

[0041] Preparation stage: acidizing the polycrystalline copper foil: ultrasonically clean the polycrystalline copper foil with 10% hydrochloric acid solution, ethanol, and deionized water for 8 minutes, and then dry the polycrystalline copper foil with nitrogen;

[0042] Step a: put the acidified polycrystalline copper foil into a semi-closed quartz test tube, place the polycrystalline copper foil on the mouth of the semi-closed quartz test tube, put the semi-closed quartz test tube into the constant temperature zone of the tube furnace, and put the The weighing bottle with polystyrene is placed in the end of the tube furnace near the air inlet, the weighing bottle is 32.5 cm away from the semi-closed quartz test tube, and the tube furnace is evacuated and argon gas is introduced. This step is repeated three times to remove the tube. The air in the furnac...

Example Embodiment

[0046] Example 3

[0047] A preparation method of single-layer single-crystal graphene, comprising the following steps:

[0048] Preparation stage: acidizing the polycrystalline copper foil: ultrasonically clean the polycrystalline copper foil with glacial acetic acid, ethanol and deionized water for 7 minutes in turn;

[0049] Step a: Put the acidified polycrystalline copper foil into the semi-closed quartz test tube, put the semi-closed quartz test tube into the tube furnace, and put the weighing bottle containing polystyrene into the tube furnace near the air inlet One end of the weighing bottle is 40cm away from the semi-closed quartz test tube, and argon is introduced into the tube furnace to fill the tube furnace with argon, and the argon flow rate is 500sccm;

[0050] Step b: continue to feed argon gas, heat the polycrystalline copper foil to 800°C, and then keep the temperature constant for 30min;

[0051] Step c: Stop feeding argon, start feeding hydrogen, the flow ...

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Abstract

The invention provides a preparation method of monolayer and mono-crystal graphene. The preparation method comprises the following steps: putting a semi-sealed quartz test tube filled with a copper-based catalyst into a tubular furnace; putting a weighing bottle filled with a solid carbon source into one end, close to a gas inlet, of the tubular furnace; introducing inert gas; continuously introducing the inert gas and heating the copper-based catalyst to raise the temperature to 600 DEG C to 800 DEG C; then keeping constant temperature for 30min to 120min; stopping introducing the inert gas and starting to introduce reducing gas; heating the copper-based catalyst and raising the temperature to 1000 DEG C to 1050 DEG C; then keeping the constant temperature for 60min to 120min; rapidly cooling to obtain the monolayer and mono-crystal graphene on the surface of the copper-based catalyst. The preparation method provided by the invention has the advantages of convenience for operation, simplicity and feasibility, safety and reliability, relatively low cost and strong controllability; the monolayer and mono-crystal graphene can be used for high-end electronic devices and integrated circuits and technical supports are provided for realizing an industrialized road of the monolayer and mono-crystal graphene.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a method for preparing single-layer single-crystal graphene. Background technique [0002] Graphene is a two-dimensional carbon material with a honeycomb hexagonal structure. Its unique crystal structure endows it with excellent properties, such as high mobility, light transmittance and mechanical strength, etc., making graphene have great application prospects. Initially, graphene was prepared by micromechanical exfoliation of highly oriented pyrolytic graphite, and high-quality graphene was obtained. At present, in the reports of graphene devices prepared by the existing CVD method, the mobility of graphene is between 1000 and 10000 cm 2 V -1 S -1 , far below the theoretical value of 200,000cm 2 V -1 S -1 of the mobility. [0003] The graphene film prepared by general chemical vapor deposition method is a polycrystalline film, and its single crystal size is about s...

Claims

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Application Information

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IPC IPC(8): C01B32/186
Inventor 孙海斌高延利付灿王其尚许军旗马竞瑶申雨健
Owner XINYANG NORMAL UNIVERSITY
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