Preparation method of erbium-doped molybdenum disulfide film

A molybdenum disulfide, thin film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions to achieve the effect of reducing the initial nucleation density and gas concentration

Active Publication Date: 2017-11-03
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing main method for adjusting photoluminescence is to prepare molybdenum disulfide film and use gold chloride for chemical doping, which can only adjust photoluminescence in a small range.

Method used

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  • Preparation method of erbium-doped molybdenum disulfide film
  • Preparation method of erbium-doped molybdenum disulfide film
  • Preparation method of erbium-doped molybdenum disulfide film

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preparation example Construction

[0025] A kind of preparation method of erbium-doped molybdenum disulfide film of the present invention comprises the following steps:

[0026] Step 1. Using a chemical vapor deposition (CVD) system with three temperature zones, place the sulfur powder in the first temperature zone; place the molybdenum trioxide powder and erbium chloride powder in the second temperature zone; place the substrate at the bottom of the crucible with a cover , and then place the crucible in three temperature zones;

[0027] Step 2, vacuumize the inside of the quartz tube, and pass carrier gas into the quartz tube for cleaning;

[0028] Step 3, the first heating stage: continue to pass the carrier gas, heat the second temperature zone to 150-350°C, and keep it for 60-180min; heat the third temperature zone to 150-350°C, and keep it for 60-180min;

[0029] Step 4, the second heating stage: After inflating the quartz tube to make the internal pressure of the quartz tube equal to atmospheric pressure...

Embodiment 1

[0045] Step 1, use figure 1 In the shown three-temperature zone chemical vapor deposition (CVD) system, 100 mg of sulfur powder with a purity of 99.99% is placed in a corundum boat and placed in a temperature zone; The erbium powder is placed in the corundum boat and placed in the second temperature zone; the mass of the molybdenum trioxide powder and the erbium chloride powder are both 5 mg; the C-face sapphire or silicon oxide / silicon is selected as the substrate, and the substrate is cleaned; After drying, place it in a quasi-closed crucible, and then place the crucible in three temperature zones;

[0046] Step 2, use a mechanical pump to pump the background vacuum in the quartz tube to below 1Pa, pass an inert carrier gas into the quartz tube: high-purity nitrogen gas, the flow rate of the carrier gas is 100ccm, and the flowing gas is cleaned several times;

[0047] Step 3, the first heating stage: continue to pass the carrier gas, heat the second temperature zone to 150°...

Embodiment 2

[0053] Step 1, use figure 1 In the three-temperature zone chemical vapor deposition (CVD) system shown, 300 mg of sulfur powder with a purity of 99.99% is placed in a corundum boat and placed in a temperature zone; The erbium powder is placed in the corundum boat and placed in the second temperature zone; the mass of the molybdenum trioxide powder is 10mg, and the mass of the erbium chloride powder is 5mg; the C-plane sapphire or silicon oxide / silicon is selected as the substrate, and the substrate is cleaned ;Place it in a quasi-closed crucible after drying, and then place the crucible in three temperature zones;

[0054] Step 2, use a mechanical pump to pump the background vacuum in the quartz tube to below 1Pa, pass an inert carrier gas into the quartz tube: high-purity nitrogen gas, the flow rate of the carrier gas is 300ccm, and the flowing gas is cleaned several times;

[0055] Step 3, the first heating stage: continue to pass the carrier gas, heat the second temperatur...

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Abstract

The invention discloses a preparation method of an erbium-doped molybdenum disulfide film. The method comprises the following steps that (1), powdered sulfur is placed in a first temperature area, molybdenum trioxide powder and erbium chloride powder are placed in a second temperature area, a substrate is placed on the surface of crucible, and then the crucible is placed in a third temperature area; (2), a vacuum tube furnace is internally subjected to vacuumizing, and the carrier gas is introduced into the vacuum tube furnace to clean the vacuum tube furnace; (3), the carrier gas is introduced continuously, the second temperature area is heated to be 150-350 DEG C, and the third temperature area is heated to 150-350 DEG C; (4), the vacuum tube furnace for pre-evaporation and pre-nucleation of the third temperature area is set to be minus 150-150 DEG C, and gaseous MoO3-x is obtained, wherein x is larger than zero and smaller than or equal to one; (5), the first temperature area is heated to be 130-220 DEG C, sulphur vapor is obtained, the second temperature area is heated to be 800-900 DEG C, and the third temperature area is heated to be 700-850 DEG C; and (6), the first temperature area, the second temperature area and the third temperature area are cooled to the room temperature, and the molybdenum disulfide film is obtained. Control over the appearance of the molybdenum disulfide film is achieved through control over the temperature gradient between the pre-evaporation temperature and the pre-nucleation temperature.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition preparation, in particular to a method for preparing an erbium-doped molybdenum disulfide thin film. Background technique [0002] The two-dimensional layered material molybdenum disulfide exhibits many novel physical properties due to the in-plane covalent bonding and the weak van der Waals force between the layers. The study of photoluminescent properties from single layer to multilayer has great potential for the application of two-dimensional materials in optoelectronic devices, communication and other fields. However, the main emission peaks of photoluminescence and electroluminescence observed in all 2D layered materials are concentrated in the visible to near-infrared (NIR) range. Therefore, it is particularly important to tune the photoluminescent properties influenced by excitons, energy bands, and layer numbers. The existing main method for adjusting photoluminescence...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/448
Inventor 蒲红斌杨勇张珊邸君杰
Owner XIAN UNIV OF TECH
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