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A kind of preparation method of erbium doped molybdenum disulfide film

A technology of molybdenum disulfide and thin film, applied in gaseous chemical plating, metal material coating process, coating, etc., to achieve the effect of reducing gas phase concentration and initial nucleation density

Active Publication Date: 2019-10-25
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing main method for adjusting photoluminescence is to prepare molybdenum disulfide film and use gold chloride for chemical doping, which can only adjust photoluminescence in a small range.

Method used

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  • A kind of preparation method of erbium doped molybdenum disulfide film
  • A kind of preparation method of erbium doped molybdenum disulfide film
  • A kind of preparation method of erbium doped molybdenum disulfide film

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preparation example Construction

[0025] The preparation method of an erbium-doped molybdenum disulfide film of the present invention includes the following steps:

[0026] Step 1. Use a three-temperature zone chemical vapor deposition (CVD) system to place sulfur powder in a temperature zone; place molybdenum trioxide powder and erbium chloride powder in a second temperature zone; place the substrate on the bottom of a crucible with a lid , And then place the crucible in the three-temperature zone;

[0027] Step 2. Vacuum the inside of the quartz tube and pass carrier gas into the quartz tube for cleaning;

[0028] Step 3. The first heating stage: continue to pass the carrier gas, heat the second temperature zone to 150-350°C for 60-180 minutes; heat the third temperature zone to 150-350°C for 60 to 180 minutes;

[0029] Step 4. The second heating stage: After filling the quartz tube to make the pressure inside the quartz tube the atmospheric pressure, adjust the carrier gas flow, set the temperature difference betwe...

Embodiment 1

[0045] Step 1. Use figure 1 In the three-temperature zone chemical vapor deposition (CVD) system shown, 100 mg of sulfur powder with a purity of 99.99% is placed in a corundum boat and placed in a temperature zone; molybdenum trioxide powder with a purity of 99.99% and a purity of 99.99% are chlorinated The erbium powder is placed in a corundum boat and placed in the second temperature zone; the masses of molybdenum trioxide powder and erbium chloride powder are both 5mg; C-plane sapphire or silicon oxide / silicon is selected as the substrate, and the substrate is cleaned; Place it in a quasi-closed crucible after drying, and then place the crucible in the three-temperature zone;

[0046] Step 2: Use a mechanical pump to pump the background vacuum in the quartz tube below 1 Pa, and pass an inert carrier gas into the quartz tube: high-purity nitrogen, the flow rate of the carrier gas is 100ccm, and the flowing gas is cleaned several times;

[0047] Step 3, the first heating stage: co...

Embodiment 2

[0053] Step 1. Use figure 1 In the three-temperature zone chemical vapor deposition (CVD) system shown, 300 mg of sulfur powder with a purity of 99.99% is placed in a corundum boat and placed in a temperature zone; molybdenum trioxide powder with a purity of 99.99% and a purity of 99.99% are chlorinated The erbium powder is placed in a corundum boat and placed in the second temperature zone; the mass of molybdenum trioxide powder is 10mg, and the mass of erbium chloride powder is 5mg; C-plane sapphire or silicon oxide / silicon is selected as the substrate, and the substrate is cleaned ; After drying, place in a quasi-closed crucible, and then place the crucible in a three-temperature zone;

[0054] Step 2. Use a mechanical pump to pump the background vacuum in the quartz tube below 1 Pa, and pass an inert carrier gas into the quartz tube: high-purity nitrogen, the flow rate of the carrier gas is 300ccm, and the flowing gas is cleaned several times;

[0055] Step 3. The first heating...

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Abstract

The invention discloses a preparation method of an erbium-doped molybdenum disulfide film. The method comprises the following steps that (1), powdered sulfur is placed in a first temperature area, molybdenum trioxide powder and erbium chloride powder are placed in a second temperature area, a substrate is placed on the surface of crucible, and then the crucible is placed in a third temperature area; (2), a vacuum tube furnace is internally subjected to vacuumizing, and the carrier gas is introduced into the vacuum tube furnace to clean the vacuum tube furnace; (3), the carrier gas is introduced continuously, the second temperature area is heated to be 150-350 DEG C, and the third temperature area is heated to 150-350 DEG C; (4), the vacuum tube furnace for pre-evaporation and pre-nucleation of the third temperature area is set to be minus 150-150 DEG C, and gaseous MoO3-x is obtained, wherein x is larger than zero and smaller than or equal to one; (5), the first temperature area is heated to be 130-220 DEG C, sulphur vapor is obtained, the second temperature area is heated to be 800-900 DEG C, and the third temperature area is heated to be 700-850 DEG C; and (6), the first temperature area, the second temperature area and the third temperature area are cooled to the room temperature, and the molybdenum disulfide film is obtained. Control over the appearance of the molybdenum disulfide film is achieved through control over the temperature gradient between the pre-evaporation temperature and the pre-nucleation temperature.

Description

Technical field [0001] The invention relates to the technical field of chemical vapor deposition preparation, in particular to a preparation method of an erbium-doped molybdenum disulfide film. Background technique [0002] Due to the in-plane covalent bonding of the two-dimensional layered material molybdenum disulfide, the layers are stacked together by weak van der Waals force, showing many novel physical properties. The research on the photoluminescence properties from single layer to multilayer has great potential space for the application of two-dimensional materials in optoelectronic devices and communications. However, the main emission peaks of photoluminescence and electroluminescence observed in all two-dimensional layered materials are concentrated in the visible to near infrared (NIR) range. Therefore, it is particularly important to adjust the photoluminescence properties affected by excitons, energy bands, and the number of layers. The existing main method for ad...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/30C23C16/448
CPCC23C16/305C23C16/4481
Inventor 蒲红斌杨勇张珊邸君杰
Owner XIAN UNIV OF TECH
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