Preparation method of molybdenum sulfide two-dimensional material growing on Sappire substrate

Abstract

The invention discloses a preparation method of a MoS2 two-dimensional material growing on a Sappire substrate. The method comprises the following steps: 1, preparing the substrate: adopting the Sappire substrate without any pretreatment; 2, preparing a raw material: conveying the Saphire substrate to a quartz table in an MOCVD cavity, controlling the pressure in the cavity to be 20 Torr, and introducing N220 slm into the cavity all the time; and 3, reacting by a chemical vapor deposition technology: raising the temperature in the cavity to the growth temperature, sequentially introducing a H2S gas source and Mo(CO)6, carrying out constant-temperature growth, reducing the temperature to the room temperature, and taking out the obtained sample to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The method has the advantages of effectiveness in control of the nucleation density, uniformity and grain orientation of MoS2, and high feasibility.

Description

technical field [0001] The present invention relates to MoS 2 The technical field of two-dimensional materials, in particular, relates to a preparation method of a molybdenum sulfide two-dimensional material grown on a sapphire substrate. Background technique [0002] Monolayer transition metal chalcogenides have attracted extensive attention in recent years because of their excellent properties in fundamental physics such as mechanics, heat, optics, and electricity. Among them, single-layer molybdenum disulfide is the most typical transition metal chalcogenide. Due to its wide range of sources and good relative stability, it has been studied more. So far, it has been found that monolayer semiconductor molybdenum disulfide can be used to make piezoelectric transistors, generators, ultra-sensitive photodetectors, chiral light-emitting transistors, high-performance integrated circuits, etc. To realize the practical application of these devices, the most basic thing is the la...

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Problems solved by technology

Among them, although the peeling method is simple to operate, the shape and size of the obtained sample are irregular, and it is difficult to peel the sample into a single layer, and the residual glue introduced during the peeling process has a great impact on the later device preparation and performance; Physical vapor transport uses powdered molybdenum sulfide source, which has been proven to grow micron-scale single-crystal single-layer molybdenum disulfide samples with high optical quality, but the grown single crystals are generally small in size.

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