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A kind of preparation method of large-area non-layer structure nise nano film

A non-layered structure, nano-thin film technology, applied in the direction of coating, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of high cost, and achieve the effect of good quality, good practical value, and large grain size

Inactive Publication Date: 2018-12-18
HEFEI UNIV OF TECH
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AI Technical Summary

Problems solved by technology

Nanofilms of large-area non-layered materials can be epitaxially grown on single crystal substrates by molecular beam epitaxy, but the cost is high

Method used

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Experimental program
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Embodiment Construction

[0013] A method for preparing a large-area non-layered structure NiSe nano film, comprising the following steps:

[0014] (1) Preparation of NiSe nano-film: Ni foil with a thickness of 50 μm and a purity of 99.99% was selected to have 10 sccm H 2 and 20 sccm Ar in a low-pressure atmosphere, annealing at 500 °C for 30 min to remove the oxide on the surface of the Ni foil; after annealing, use electron beam evaporation to deposit a ZnSe film on the surface of the Ni foil. in 2×10 -4 Pa; followed by ZnSe / Ni foil at 2×10 -4 Annealing at 700 °C for 30 min at a vacuum of Pa to obtain a NiSe nanofilm;

[0015] (2) Transfer of NiSe nano film: Spin coating concentration of 100 mg / ml PMMA on the NiSe nano film obtained on the surface of Ni foil with a thickness of 50 μm. Glue for 6 s, and then spread the glue at 2000 r / min for 40 s; after spin coating, put it on a heating table and bake it at 80 ℃ for 5 min; then put the PMMA / NiSe / Ni foil into 2.0 mol / L FeCl 3 The Ni foil is etch...

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Abstract

The invention discloses a preparation method of a large-area non-layered structure NiSe nano thin film. The method comprises the steps of preparing the NiSe nano thin film; transferring the NiSe nano thin film; and constructing an NiSe nano thin film photodetector. The non-layered structure NiSe nano thin film obtained by growth through a solid-phase reaction method is good in quality; the grain sizes are large; and the number of grain boundaries is small. On the basis of the photodetector prepared from the high-quality NiSe nano thin film, the obtained photocurrent is improved by four orders of magnitude in comparison with that of the NiSe nano-crystalline thin film. The preparation technology is simple; the cost is low; the method has relatively good practical value; and the method can be used for preparing other non-layered structure material nano thin films compatible with a traditional planar process.

Description

technical field [0001] The invention belongs to the field of semiconductor film materials, and relates to a method for preparing a large-area non-layer structure NiSe nano film by a solid phase reaction method. Background technique [0002] Graphene and other 2D materials, including hexagonal boron nitride and transition metal sulfides, have attracted extensive attention due to their unique structures and properties. In particular, high-quality, large-area two-dimensional films can be prepared on specific substrates by methods such as chemical vapor deposition, which significantly accelerates the application and development of two-dimensional materials. Inspired by layered two-dimensional materials, it can be predicted that nanofilms of non-layered materials are compatible with traditional planar processes, and are more conducive to their applications than other dimensions. Moreover, compared with films composed of nanocrystals, the prepared non-layered nanofilms with large...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032C23C14/30C23C14/06
CPCC23C14/0623C23C14/30H01L31/032H01L31/1896Y02P70/50
Inventor 王敏蔡曹元马杨黄帆贾飞翔许智豪吴从军
Owner HEFEI UNIV OF TECH
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