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Compound thin film and preparation method thereof, and compound thin film solar cell

A thin-film solar cell and compound technology, applied in circuits, photovoltaic power generation, electrical components, etc., to improve film quality, reduce defects and recombination centers, and promote crystallization

Active Publication Date: 2020-01-10
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, how to simultaneously obtain a well-crystallized compound thin-film solar cell absorber layer under low-temperature preparation conditions has become the biggest challenge in the current low-temperature process.

Method used

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  • Compound thin film and preparation method thereof, and compound thin film solar cell
  • Compound thin film and preparation method thereof, and compound thin film solar cell
  • Compound thin film and preparation method thereof, and compound thin film solar cell

Examples

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preparation example Construction

[0039] see figure 1 , an embodiment of the present invention provides a method for preparing a compound thin film, which includes: annealing a Bi-doped absorber layer precursor at a low temperature.

[0040] In detail, in the embodiment of the present invention, through the doping of VA element Bi, during the annealing process, the doped Bi element will react to form a low-melting point compound and act as a flux to promote the crystallization of the absorbing layer film, reducing the film Defects and recombination centers in the film can improve the quality of the film layer, thereby improving the performance of the corresponding battery device, and then effectively solve the problem of growing the absorption layer of high-quality compound thin film batteries under low temperature preparation conditions. In order to promote the flexible PI substrate compound film The industrial development of solar cells provides more possible ways.

[0041] Specifically, see again figure 1...

Embodiment 1

[0053] This embodiment provides a compound thin film solar cell, which is prepared by the following method:

[0054] S1: Using molybdenum-coated soda-lime glass as the substrate, a 50nm-thick Bi layer was deposited on the Mo surface by DC sputtering a metal Bi target. The Bi target was a circular target with a diameter of 3 inches and a thickness of 5mm. During the sputtering process, Ar is introduced as the working gas, the sputtering pressure is 0.8Pa, and the sputtering power density is 0.679W / cm 2 , sputtering time 20s;

[0055] S2: The CIGS precursor is prepared by radio frequency magnetron sputtering quaternary target. The quaternary target contains Cu, In, Ga and Se at the same time. The atomic ratio is: 22:17.5:7.5:53. The target The size of the material is the same as that of the Bi target. After the preparation is completed, sputter deposition is carried out. During the sputtering process, the sputtering pressure is 1.0Pa, and the sputtering power density is 3.395W...

Embodiment 2

[0062] Example 2 provides a compound thin film solar cell, the difference between its preparation method and Reference Document 1 is that in this example:

[0063] The thickness of the metal Bi layer is selected to be 100 nm, the thickness of the absorbing layer is selected to be 2 μm, the annealing temperature rise rate is 30° C. / min, the annealing time is 60 minutes, and the annealing temperature is 500° C.

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Abstract

The invention discloses a compound thin film and a preparation method thereof, and a compound thin film solar cell, and relates to the cell technology field. The compound thin film is prepared by annealing an absorption layer precursor doped with Bi under a low-temperature condition. According to the compound thin film, VA element Bi doping is performed, in an annealing process, a doped Bi elementcan react to generate a low-melting-point compound and the low-melting-point compound is used as a fluxing agent to promote crystallization of an absorption layer thin film, and defects and compositecenters in the thin film are reduced so that quality of a film layer can be improved, corresponding cell device performance can be increased, a problem of growing an absorption layer of a high-quality compound thin film cell under a low-temperature preparation condition is effectively solved, and more possible ways are provided for promoting industrial development of a flexible PI substrate compound thin film solar cell.

Description

technical field [0001] The invention relates to the technical field of batteries, in particular to a compound thin film, a preparation method thereof, and a compound thin film solar cell. Background technique [0002] Compound thin-film solar cells have attracted extensive attention from academia and industry due to their high absorption coefficient, saving raw materials, lightweight components and flexible fabrication. Among them, the most representative cells are copper indium gallium selenide (CIGS) and Copper zinc tin sulfur (CZTS), etc. Compared with crystalline silicon cells, the biggest advantage of thin-film solar cells is that they can be fabricated flexibly. In the current situation where crystalline silicon cells occupy a dominant position in the market and have both cost and efficiency advantages, thin-film cells must give full play to their own advantages, find a way out in the field of flexible devices, and at the same time expand the applicable scenarios and ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0392H01L31/0445
CPCH01L31/03926H01L31/1864H01L31/0445Y02E10/50Y02P70/50
Inventor 洪瑞江张林泉曾龙龙曾淳泓梁云锋周建黄培年
Owner SUN YAT SEN UNIV
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