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Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device of strip-shaped composite substrate

A composite substrate and strip-shaped technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of poor wavelength concentration, achieve the effect of improving crystallinity, good LED wavelength concentration, and improving product yield

Pending Publication Date: 2022-03-22
福建中晶科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Finally, by designing a new graphite disk, the problem of poor wavelength concentration after epitaxial growth of strip substrates is solved

Method used

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  • Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device of strip-shaped composite substrate
  • Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device of strip-shaped composite substrate
  • Strip-shaped composite substrate for LED epitaxy and preparation method and preparation device of strip-shaped composite substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0042] refer to Figure 2-3 , a strip-shaped composite substrate for LED epitaxy, the substrate is a sapphire substrate, the graphics on the sapphire substrate are strip-shaped, and several of the graphics are arranged periodically, and between two adjacent graphics There are intervals; the orientation of each of the patterns is consistent; the width of the bottom of the pattern is greater than the width of the top; the material of the pattern is Al 2 o 3 , the pattern side is covered with several layers of SiO 2 layer, the sapphire substrate has no pattern area without SiO 2 layer.

[0043] The number of GaN epitaxial grain boundaries grown on the strip-shaped sapphire substrate is less, which can significantly improve the crystallinity of the epitaxial layer and improve IQE, thereby improving the luminous efficiency of the LED.

[0044] Traditional conical figures cannot emit polarized light, refer to figure 1 , and the strip substrate can obtain polarized light due to ...

Embodiment 2

[0048] A strip-shaped composite substrate for LED epitaxy. On the basis of Embodiment 1, the shapes of the figures are the same, the figures are horizontal triangular prisms, and the SiO 2 layer covering the graphic sidewalls.

[0049] The orientations of each of the figures are consistent when they are periodically arranged, that is, the long sides of the strip figures are parallel to each other, and the figures are horizontal triangular prisms. At this time, the angle between the incident light and each figure and each position is the same, By controlling the angle between the incident light and the pattern so that when it reaches the Brewster angle, the reflected light is completely polarized light, and by adjusting the polarization direction of the completely polarized light to be consistent with the vertical polarization mode, the amount of light passing through the vertical polarization mode is increased. .

[0050] the second part

Embodiment 3

[0052] refer to Figure 5 , a method for preparing a strip-shaped composite substrate for LED epitaxy, for preparing any strip-shaped composite substrate for LED epitaxy described in the first part, comprising the following steps

[0053] Vacuum-evaporating a layer of metal film on the sapphire substrate and the pattern;

[0054] Spin-coating a layer of photoresist on the sapphire substrate, the thickness of the photoresist is 2 μm-2.5 μm;

[0055] Reduce photoresist thickness to 150-500nm;

[0056] removing the metal film over the photoresist;

[0057] Multilayer SiO was grown on the pattern using magnetron sputtering 2 layer, each layer thickness 20nm; several SiO 2 the total thickness of the layers is less than the metal film thickness;

[0058] Use solvents and solutions to remove remaining photoresist and metal film.

[0059] The traditional composite substrate preparation method is to deposit a layer of low refractive index material on the surface of sapphire first...

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Abstract

The invention relates to a strip-shaped composite substrate for LED epitaxy and a preparation method and a preparation device thereof, the substrate is a sapphire substrate, patterns on the sapphire substrate are strip-shaped, a plurality of patterns are periodically arranged, and an interval exists between every two adjacent patterns; the orientations of the patterns are consistent; the pattern bottom width is greater than the top width; the pattern is made of Al2O3, the side wall of the pattern is covered with a plurality of SiO2 layers, and gaps exist between the SiO2 layers and the sapphire substrate. According to the composite substrate, the light emitting efficiency of an LED is improved through the periodically arranged strip-shaped patterns, the polarization direction of emergent light can be controlled, and polarized light is obtained while the light emitting efficiency of the LED is improved. The preparation method can be used for preparing a multi-layer composite structure, the polarized light extraction efficiency is improved, meanwhile, the deposition position of the composite structure can be controlled, the composite structure is only deposited on the pattern side wall, no pattern area is deposited, and the purpose is that the epitaxial technology does not need to be changed.

Description

technical field [0001] The invention relates to a strip-shaped composite substrate for LED epitaxy, a preparation method and a preparation device thereof, and belongs to the technical field of LED chips. Background technique [0002] In recent years, GaN-based LEDs have been widely used due to many advantages such as high brightness, low energy consumption, and long life. Although GaN-based LEDs have been widely used, due to the limitations of GaN-based LEDs' Internal Quantum Efficiency (IQE) and light extraction efficiency (Light Extraction Efficiency, LEE), it is difficult to further improve the luminous efficiency of GaN-based LEDs. The study found that the GaN epitaxial layer grown on the strip PSS has fewer grain boundaries, which can significantly improve the crystallinity of the epitaxial layer and improve the IQE. [0003] At present, the graphics of mainstream PSS substrates are conical graphics arranged periodically, such as figure 1 shown. This kind of substrat...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/46H01L33/00
CPCH01L33/20H01L33/46H01L33/005H01L2933/0025
Inventor 侯想刘熠新陈峰钟梦洁林赛罗荣煌卢文瑞游庆勇许珂
Owner 福建中晶科技有限公司
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