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Manufacturing method of low temperature poly-silicon thin film, low temperature poly-silicon thin film and low temperature poly-silicon TFT substrate

A technology of low-temperature polysilicon and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of messy starting point and direction, and affect the electron mobility of polysilicon, so as to reduce the number of grain boundaries and reduce the effect, the effect of high electron mobility

Inactive Publication Date: 2018-11-16
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

Since excimer laser beams are currently used to uniformly irradiate the amorphous silicon thin film layer, the temperature of each part of the amorphous silicon thin film layer is roughly equal, so the starting point and direction of recrystallization are messy, resulting in small crystal grains after crystallization. Too many grain boundaries between grains will affect the electron mobility of polysilicon

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  • Manufacturing method of low temperature poly-silicon thin film, low temperature poly-silicon thin film and low temperature poly-silicon TFT substrate
  • Manufacturing method of low temperature poly-silicon thin film, low temperature poly-silicon thin film and low temperature poly-silicon TFT substrate
  • Manufacturing method of low temperature poly-silicon thin film, low temperature poly-silicon thin film and low temperature poly-silicon TFT substrate

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[0036] see figure 1 , the present invention at first provides a kind of manufacturing method of low-temperature polysilicon thin film, the first embodiment of the manufacturing method of low-temperature polysilicon thin film of the present invention specifically comprises the following steps:

[0037] Step S1, such as figure 2 As shown, the base substrate 10 is provided, the buffer layer 20 is made on the base substrate 10, and then the amorphous silicon thin film layer 30 is deposited, and the amorphous silicon thin film layer 30 is subjected to high temperature dehydrogenation treatment and hydrofluoric acid ( HF) pre-cleaning treatment.

[0038] Specifically, the buffer layer 20 is a stack combination of a silicon nitride (SiNx) layer and a silicon oxide (SiOx) layer.

[0039] Step S2, such as Figure 3-5 As shown, a refraction layer 40 of silicon nitride material is deposited on the amorphous silicon thin film layer 30, and then a 2.2 μm photoresist material is coated ...

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Abstract

The invention provides a manufacturing method of a low temperature poly-silicon thin film, the low temperature poly-silicon thin film and a low temperature poly-silicon TFT substrate. According to themanufacturing method of the low temperature poly-silicon thin film, a refection layer of a silicon nitride material is formed through deposition on an amorphous silicon thin film layer, and a plurality of convex or concave arc surface structures are formed on the surface of the refraction layer; when an excimer laser beam is adopted to irradiate the amorphous silicon thin film layer, the amorphous silicon thin film layer is crystallized to form a low temperature poly-silicon thin film; in the process, a certain light scattering effect or a condensation effect can be generated when the excimerlaser beam passes through the arc surface structures of the refraction layer, so that a laser energy gradient is formed on the amorphous silicon thin film layer; and therefore, the crystallization direction of the amorphous silicon thin film layer can be controlled, the grain size is enlarged, and the grain boundary quantity is reduced, so that the mobility of the carriers of a TFT device can beimproved, and influence of the grain boundary to the leakage current can be lowered.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a manufacturing method of a low-temperature polysilicon thin film, a low-temperature polysilicon thin film and a low-temperature polysilicon TFT substrate. Background technique [0002] In the field of display technology, flat panel display devices such as Liquid Crystal Display (LCD) and Active Matrix Organic Light-Emitting Diode (AMOLED) display have thin body, high image quality, Many advantages such as power saving and no radiation have been widely used, such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook screens, etc. [0003] Thin Film Transistor (Thin Film Transistor, TFT) array (Array) substrate is the main component of current LCD devices and AMOLED devices, directly related to the development direction of high-performance flat panel display devices, used to provide drive circuits for displays, usually equipped with s...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L21/268H01L21/77H01L29/16
CPCH01L21/268H01L27/1222H01L27/1281H01L27/1285H01L29/16
Inventor 张瑞军卢马才王松
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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