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A pressure-driven ion diffusion growth method for the preparation of inorganic perovskite single crystal thin films

A single crystal thin film, ion diffusion technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of high heat treatment temperature, film damage, and the inability to realize the secondary growth of grains, etc., to achieve uniform film layer, Improving performance and eliminating defects

Active Publication Date: 2021-06-01
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not suitable for the improvement of all-inorganic perovskite semiconductor films, because the heat treatment temperature of all-inorganic perovskite semiconductor materials is relatively high, and the effect of poor solvents fails at high temperatures, resulting in severe damage to the film, making it impossible to Achieve secondary growth of grains

Method used

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  • A pressure-driven ion diffusion growth method for the preparation of inorganic perovskite single crystal thin films
  • A pressure-driven ion diffusion growth method for the preparation of inorganic perovskite single crystal thin films
  • A pressure-driven ion diffusion growth method for the preparation of inorganic perovskite single crystal thin films

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Effect test

Embodiment 1

[0040] Embodiment 1: A pressure-driven ion transport growth method for preparing an inorganic perovskite single crystal film, comprising the following steps:

[0041] 0.21 mmol PbBr 2 with 1.19 mmol PbI 2 Dissolve in 1mL of DMF / DMSO mixed solution and stir at room temperature for 3h, then filter with a 0.22μm pore size filter; place the surface-cleaned ITO glass on a hot stage at 70°C for 5min, then add 40μL of the above mixed solution dropwise Added to the ITO glass substrate and spin-coated at 2000 rpm for 30s. The films thus obtained were annealed at 70°C for 5 min. Next, a certain amount of CsBr was dissolved in 0.98 mL of methanol to obtain a CsBr solution with a concentration of 15 mg / mL, and then 0.02 mL of DMSO was added to the CsBr solution to obtain a CsBr precursor solution. Add one drop of the CsBr precursor solution (approximately 10 μL) to the PbI prepared above 2 / PbBr 2 surface of the film, and rotate at a speed of 2500 rpm until the solvent evaporates. T...

Embodiment 2

[0048] Example 2: A method for preparing an inorganic perovskite single-crystal thin film by pressure-driven ion diffusion growth. The operation steps are the same as in Example 1, except that the polished cover sheet is replaced with a polished glass sheet, and the heat and pressure transfer medium It is triethylene glycol, the hot-pressing pressure is 25MPa, the hot-pressing temperature is 300°C, the hot-pressing time is 60 hours, the heating rate is 5°C / min, and the treated film is CsPbBr 3 .

Embodiment 3

[0049] Example 3: A method for preparing an inorganic perovskite single crystal thin film by pressure-driven ion diffusion growth. The operation steps are the same as in Example 1, except that the polished cover is replaced by a gallium arsenide single wafer, and the sample is coated with The flexible film is gold foil, the heat transfer and pressure transfer medium is triphenylmethanol, the heat treatment pressure is 500MPa, the hot pressing temperature is 100°C, the heat treatment time is 360 hours, the heating rate is 1°C / min, and the treated film is CsSnCl 3 .

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Abstract

The invention relates to a method for preparing an inorganic perovskite single-crystal thin film by pressure-driven ion diffusion growth. First, the inorganic perovskite semiconductor polycrystalline thin film is prepared by the conventional solution spin coating method, and then the surface-polished cover sheet is closely attached to the surface of the polycrystalline thin film, and covered with a flexible high-temperature resistant thin film. Next, put the sample into a high-pressure autoclave filled with liquid pressure and heat transfer medium, apply high pressure to the autoclave after sealing the autoclave, and raise the temperature to the set value at a set speed. After constant temperature and pressure treatment for a period of time, the autoclave was slowly cooled to room temperature. After the pressure is removed, the autoclave can be opened to obtain a high-quality inorganic perovskite semiconductor single crystal thin film with large grain size, high crystallinity, and highly fused grain boundaries. The inorganic perovskite single crystal thin film prepared by the invention can be used to develop high-performance solar cells, electroluminescent devices, photodetectors, etc., and has important application value in the fields of new energy technology, display equipment manufacturing, automatic control, and the like.

Description

technical field [0001] The invention relates to a method for preparing an inorganic perovskite single-crystal thin film by pressure-driven ion diffusion growth, and belongs to the technical field of new materials. Background technique [0002] Due to a series of advantages such as large light absorption coefficient, wide absorption wavelength range, small exciton binding energy, high carrier mobility and long diffusion length, perovskite semiconductors are widely used in photoelectric functions such as solar cells, light-emitting devices, and photodetectors. It has been widely used in the development of devices. [0003] At present, perovskite semiconductor materials are mostly applied to the above-mentioned devices in the form of thin films, so the quality of the thin films directly determines the performance of the devices. In order to obtain high-performance photoelectric functional devices, it is necessary to try to reduce various defects in the film and greatly improve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/12C30B29/12
CPCC30B1/12C30B29/12
Inventor 廉刚黄丽萍吕松王涛朱菲王琪珑崔得良
Owner SHANDONG UNIV
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