Low-temperature poly-silicon manufacturing method, method for manufacturing TFT substrate by utilization of low-temperature poly-silicon manufacturing method, and TFT substrate structure

Abstract

The invention provides a low-temperature poly-silicon manufacturing method, a method for manufacturing a TFT substrate by utilization of the low-temperature poly-silicon manufacturing method, and a TFT substrate structure. The low-temperature poly-silicon manufacturing method comprises the following steps that 1, the substrate (1) is provided; 2, a buffer layer (2) is formed on the substrate (1) in a deposition mode; 3, pattern processing is carried out on the buffer layer (2), and a convex portion (21) and a concave portion (23) which are different in thickness are formed; 4, an amorphous silicon layer (3) is formed on the buffer layer (2) provided with the convex portion (21) and the concave portion (23) in a deposition mode; 5, excimer laser annealing pretreatment is carried out on the amorphous silicon layer (3); 6, excimer laser annealing is carried out on the amorphous silicon layer (3), the whole surface of the amorphous silicon layer (3) is scanned through laser beams, and the amorphous silicon layer (3) is made to melt and is recrystallized to form a poly-silicon layer (4). The method can effectively control the crystallization position and crystallization direction when the amorphous silicon layer is recrystallized.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing low-temperature polysilicon, a method for manufacturing a TFT substrate using the method, and a structure of the TFT substrate. Background technique [0002] With the development of flat panel displays, the demand for panels with high resolution and low energy consumption is constantly being raised. Due to its high electron mobility, Low Temperature Poly-Silicon (LTPS) has attracted the attention of the industry in the technology of Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) , is regarded as an important material to realize low-cost full-color flat panel display. For flat panel displays, the use of low-temperature polysilicon materials has the advantages of high resolution, fast response, high brightness, high aperture ratio, and low energy consumption, and low-temperature polysilicon can be produced at low temperatures and c...

AI Technical Summary

Problems solved by technology

However, these methods require additional technologies and processes, and have very strict requirements on the accuracy of the mask, resulting in difficulties in mass production.

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