9 results about "Poly crystalline" patented technology

In certain examples, a poly crystalline (PC) diamond layer is processed to enhance the layer's TC (thermal conductivity) by a localized anneal confined to a subset region of the layer's processing surface. The temperature(s) of the localized anneal is sufficiently high to have damaged the processing surface if all of the processing surface were subjected to an anneal at such temperature(s). The localized anneal truncates grains extending into or beyond the processing surface to set or correspond with a low roughness attribute (e.g., not more than 1 nm). In another example, the localized anneal is preceded by performing a global anneal. The localized anneal results in unique physical attributes of the PC diamond layer including, e.g., the processing surface not being anneal-damaged, truncated diamond grains sufficient to set or correspond with an RMS roughness measure, and the TC being set as a function of grain sizes in the PC diamond layer and its thickness.

The polycrystalline diamond multi-point cutting drill bit for the down-the-hole hammer comprises an installation base body, a drill bit handle is coaxially arranged at the top of the installation base body, a plurality of movable grooves are symmetrically formed in the edge of the bottom of the installation base body, a blocking face is arranged at one end in each movable groove, and an installation block body is contained in each movable groove. The ends, close to the blocking faces, of the installation block bodies are rotationally connected with the movable grooves, all the installation block bodies can rotate to the exterior of the installation base body, at the moment, the installation block bodies are all arranged on the blocking faces, and a plurality of polycrystalline diamonds are arranged on the bottom faces of the installation block bodies and the installation base body. When the drill bit is used, the mounting block body extends to the outside of the mounting seat body when the drill bit is forwards tunneled, so that the tunneled diameter of the mounting seat body can be enlarged, and when the drill bit is lifted and the mounting seat body is reversely rotated, the mounting block body can automatically rotate into the movable groove, so that the diameter of the drill bit is reduced, and the drill bit can be conveniently pulled out of a hole.

The invention discloses a method for improving MPCVD diamond polycrystalline deposition by coating a substrate with diamond powder, and belongs to the technical field of microwave plasma chemical vapor deposition. According to the method, in the MPCVD heteroepitaxial growth process, diamond powder coating pretreatment is conducted on the surface of a growth substrate, the amount of oxygen, carbon dioxide and nitrogen introduced into MPCVD equipment is changed, diamond polycrystalline deposition of different substrates on the MPCVD equipment is improved, and through diamond powder coating and plasma activating treatment, the diamond polycrystalline deposition efficiency is improved. According to the technical scheme, the nucleation density and the adhesive force of the surface of the substrate are remarkably improved, growth parameters are optimized, efficient deposition of diamond polycrystals is achieved by accurately controlling parameters such as microwave power, gas flow and substrate temperature, and by means of the technical scheme, the deposition efficiency and the nucleation density of the diamond polycrystals can be remarkably improved; and meanwhile, the process steps are simplified, the production cost is reduced, and the method has wide application prospects and is suitable for large-scale production.

A semiconductor memory device includes a device isolation pattern on a substrate to define an active region, a word line in the substrate to intersect the active region, a first doped region in the active region and on a first side of the word line, a second doped region in the active region and on a second side of the word line, a bit line connected to the first doped region and intersecting the word line, a bit line contact connecting the bit line to the first doped region, a landing pad on the second doped region, and a storage node contact connecting the landing pad to the second doped region, the storage node contact including a first portion in contact with the second doped region, the first portion including single crystalline silicon, and a second portion on the first portion and including poly crystalline silicon.

The present disclosure relates to a structure having poly active region fill shapes and related methods. A structure includes a semiconductor-on-insulator (SOI) substrate including a semiconductor substrate, a buried insulator layer located above the semiconductor substrate, and a SOI layer located above the buried insulator layer. At least one poly active region fill shape is located in the SOI layer. A poly isolation region can be located in the semiconductor substrate below the buried insulator layer. Where at least one poly active region fill shape is provided, the at least one poly active region fill shape is laterally aligned over the poly isolation region. Where a poly isolation region is provided, the poly isolation region can extend to different depths in the semiconductor substrate.

Methods of making cutting elements for earth-boring tools can involve mixing discrete particles of superabrasive with a binder material in a solvent to form a slurry. The slurry can be vacuum dried or spray dried to deagglomerate individual precursor agglomerates from one another, the precursor agglomerates including a set of discrete particles suspended in a discrete amount of binder material. The precursor agglomerates can be sintered while exposing the precursor agglomerates to an amount of catalyst material to form agglomerates including discrete amounts of polycrystalline superabrasive while inhibiting formation of interparticle bonds between the agglomerates themselves. The agglomerates can then be sintered while exposing the agglomerates to another amount of catalyst material to form a table of the cutting element including interparticle bonds between adjacent grains of the agglomerates.

The invention relates to a cobalt removal method for polycrystalline diamond, and belongs to the technical field of polycrystalline diamond processing. The cobalt removal method of the polycrystalline diamond comprises the following steps: immersing the polycrystalline diamond in cobalt removal liquid for ultrasonic treatment; the cobalt removal liquid is mainly composed of an acidic compound, water-soluble hydrochloride and water. According to the cobalt removal method for the polycrystalline diamond, cobalt, tungsten and other metals in the polycrystalline diamond are preliminarily dissolved by utilizing the permeation and immersion effect of the acidic compound, and meanwhile, the dissolving capacity of metal ions is improved by utilizing the metal coordination effect of the water-soluble hydrochloride; besides, energy (high-frequency vibration and high radiation pressure) of ultrasonic waves acts on the cobalt removal liquid and the polycrystalline diamond, the collision frequency of the cobalt removal liquid and the polycrystalline diamond can be increased, metal dissolution is accelerated, the metal removal effect is improved, and rapid and deep cobalt removal can be achieved.

A kind of poly crystalline diamond compact for keeping range, including hard alloy layer, the end of hard alloy layer is fixed diamond layer, diamond layer includes recessed, circular central part and annular mountain-shaped edge portion, edge portion completely surrounds central part. The end surface of edge portion is staggered with two to six high peak areas and two to six low peak areas, and low peak area becomes the passage of circulating medium into central part. Relative to the prior art, the technical effect of the utility model is that the utility model is provided with recessed central part, which can accelerate heat dissipation, maintain its own performance, and is convenient for use in deep formation rock hard, strong grinding, accompanied by extreme conditions such as high temperature and high pressure.

The application discloses a crystal growth method for avoiding polycrystalline shoulder formation of gallium oxide, and belongs to the technical field of crystal growth. The length of a slit on the surface of a mold is designed to be less than one third of the length of the mold, the supply of melt is strictly limited to the local area of the slit in the seeding stage, and the accurate starting of a single crystal is realized. Then, in the lateral expansion stage of the crystal, the interval between the upper surface of the mold and the growth interface of the crystal is actively controlled, and the melt layer in the interval is used as a dynamic and expandable raw material supply channel. Therefore, the technical prejudice of the traditional guide mold method relying on the full-length entity slit supply of the mold is broken, the melt exposure area is reduced to the vicinity of the growth interface, the spontaneous nucleation of the melt in the non-target area is fundamentally inhibited, the formation of the polycrystalline shoulder (flat shoulder) is effectively avoided, the raw material volatilization is significantly reduced, the thermal field uniformity is improved, and the crystal quality, the growth stability and the process efficiency are improved.