The invention provides a
silicon single crystal rod resistance control method, a
silicon single crystal rod, a
silicon wafer and a
solar cell. The control method comprises the following steps: obtaining
phosphorus concentration and
antimony concentration in a compound feed; obtaining the
phosphorus concentration and the
antimony concentration in the residual material in the
crucible; calculating the concentration of
phosphorus in the re-fed material and the residual material in the
crucible in the total weight of the full pot at the current feeding section according to the
phosphorus concentration in the re-fed material and the residual material in the
crucible, and calculating the concentration of
antimony in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the antimony concentration in the re-fed material and the residual material in the crucible; calculating phosphorus demand concentration according to the
phosphorus concentration ratio, and calculating antimony demand concentration according to the antimony
concentration ratio; calculating the
doping amount of the phosphorus master
alloy according to the phosphorus demanded concentration, the total weight of the full pot of the current feeding section and the concentration of the phosphorus master
alloy, and calculating the
antimony doping amount according to the antimony demanded concentration and the total weight of the full pot of the current feeding section. According to the control method provided by the invention, the
doping amount of the phosphorus master
alloy and the antimony can be accurately calculated, so that the accurate control on the resistance of the silicon
single crystal rod is realized, and the silicon single
crystal rod and the silicon
wafer have excellent resistance uniformity.