Preparation method of polycrystalline silicon thin film, polycrystalline silicon thin film transistor and array substrate

Abstract

The embodiment of the invention provides a preparation method of a polycrystalline silicon thin film, a polycrystalline silicon thin film transistor and an array substrate and relates to the technical field of display. By means of the preparation method, polycrystalline silicon crystals are uniform, the grain size is increased, crystal quality is improved, and therefore the electrical properties of the thin film transistor are improved. The preparation method of the polycrystalline silicon thin film comprises the steps that an amorphous silicon thin film is formed on a substrate; the amorphous silicon thin film is treated through an excimer laser annealing method, so that the amorphous silicon thin film is crystallized into the polycrystalline silicon thin film. Furthermore, after the amorphous silicon thin film is formed and before the amorphous silicon thin film is treated though the excimer laser annealing method, the preparation method further comprises the steps that the surface of the amorphous silicon thin film is subjected to nickel salt solution treatment, so that a nickel salt solution is uniformly smeared on the surface of the amorphous silicon thin film. The method is used for preparation of the polycrystalline silicon thin film, the low-temperature polycrystalline silicon thin film transistor and the array substrate requiring that the uniformity of the polycrystalline silicon crystals is improved, the grain size is increased, and crystal quality is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for preparing a polysilicon thin film, a method for preparing a low-temperature polysilicon thin film transistor, and a method for preparing an array substrate. Background technique [0002] Low Temperature Poly-Silicon-Thin Film Transistor (LTPS-TFT) display has the advantages of high resolution, fast response, high brightness, high aperture ratio, etc., and because of the characteristics of LTPS, it has high Electron mobility; in addition, the peripheral drive circuit can also be produced on the glass substrate at the same time to achieve the goal of system integration, save space and cost of the drive IC, and reduce product defect rate. [0003] At present, the low-temperature polysilicon thin film transistor includes an active layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode arranged on a substrate; the active layer include...

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Problems solved by technology

[0005] However, as a gas laser, the excimer laser has relatively poor stability, and the prepared polysilicon grains have relatively poor uniformity, resulting in poor uniformity of electrical characteristics of thin film transistors.

In addition, the usual excimer laser crystallization process melts and recrystallizes amorphous silicon in a short period of time, the grain size is small, and the crystal quality is not high, which limits the improvement of the electrical properties of thin film transistor devices.

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