Low-temperature polycrystalline silicon thin film transistor, array substrate and manufacturing method of array substrate

Abstract

The invention discloses a low-temperature polycrystalline silicon thin film transistor, an array substrate and a manufacturing method of the array substrate, so that manufacturing process procedures of the thin film transistor are simplified. The method includes the process that an active layer and an ohmic contact layer are formed on a substrate. The process that the active layer and the ohmic contact layer are formed on the substrate specifically includes the steps of forming an amorphous silicon layer on the substrate through; injecting impurity ions into at least the area of an ohmic contact layer to be formed of the amorphous silicon layer by means of an ion implantation method, wherein the area of the ohmic contact layer to be formed forms an initial ohmic contact layer; carrying out the excimer laser annealing process on the amorphous silicon layer after the impurity ion implantation technology; crystallizing the amorphous silicon layer after the excimer laser annealing process to form a polycrystalline silicon layer, and forming a final ohmic contact layer through the initial ohmic contact layer; carrying out the composition process on the polycrystalline silicon layer after the excimer laser annealing process to form the active layer.

Description

technical field [0001] The invention relates to the field of manufacturing thin film transistors, in particular to a low-temperature polysilicon thin film transistor, an array substrate and a manufacturing method thereof. Background technique [0002] In pixel units of various display devices, a thin film transistor (Thin Film Transistor, TFT) that drives the display device by applying a driving voltage is widely used. Amorphous silicon (a-Si) materials with better stability and processability have been used in the active layer of TFTs, but the carrier mobility of a-Si materials is low, which cannot meet the needs of large-scale, high-resolution display devices requirements, especially the requirements of the next generation of active matrix organic light emitting display devices (Active Matrix Organic Light Emitting Device, AMOLED). Compared with amorphous silicon (a-Si) thin film transistors, polysilicon, especially low-temperature polysilicon thin film transistors have h...

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Problems solved by technology

The existing technology adopts thermal annealing process with high temperature, which is not suitable for forming thin film transistors on flexible substrates

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