The invention discloses a switchover thin-film
transistor with the repair function. The switchover thin-film
transistor comprises gate electrodes (1), source electrodes (2) and drain electrodes (3). The switchover thin-film
transistor is characterized in that parts of the source electrodes (2) and parts of the drain electrodes (3) are located on the gate electrodes (1), and the source electrodes (2) on the gate electrodes (1) correspond to the drain electrodes (3) on the gate electrodes (1), one end of each source
electrode (2) is connected with a
signal line and that part of the source
electrode (2) is located outside the gate
electrode (1), and one end of each drain electrode (3) is connected with a
signal line and that part of the drain electrode (3) is located outside the gate electrode (1). In the, switchover thin-film transistor, parts of the source electrodes and the drain electrodes, which are connected with the
signal lines, are located outside the gate electrodes, and therefore, the repair can be conducted conveniently. In addition, a plurality of staggered source electrodes and drain electrodes are located on the paired gate electrodes, so the decrease in driving capability caused by repair and the undesirable phenomenon caused by the connection of the drain electrodes to odd and even
signal lines are solved. The switchover thin-film transistor has the advantages of skillful design and convenience in manufacturing, and is suitable for promotion and use.